Abstract: The present invention relates to enabling a versatile charged particle beam device, which is used for a wide range of kinds of samples to be observed and has parameters of emission conditions of a primary charged particle beam that is difficult to be registered in advance, to be operated easily and accurately even by a less-experienced operator and to obtain high-resolution images.

Abstract: An image display device displays operation items of an electron microscope on an operation screen, and a storage device stores information of assist buttons which display image state information acquired via a detector of the electron microscope. The information of the assist buttons corresponds to image quality of an acquired image via the detector as well as to observation conditions composed of a combination of parameter setting values of the electron microscope, an operation program which analyzes the image quality of the acquired image. The information of the assist buttons is acquired based on analytical results of the image quality as well as current observation conditions, and the assist buttons are displayed on a predetermined part of the operation screen. Accordingly, the skills of a novice user operating a charged particle beam apparatus can be improved.

Abstract: A charged particle beam device allowing an analysis position in a sample analyzable with an EBSD detector to be acquired beforehand, and allowing a sample to be adjusted to a desired analysis position in a short time. A charged particle beam device is provided with a charged particle source (111), a charged particle optical system (115), an EBSD detector (101), a sample stage (116), an image display unit (117) for displaying a portion of the sample observable with the EBSD detector and a non-observable portion of the sample such that said portions are distinguished from each other, an operation input unit (121) where a position to be observed by the EBSD detector is entered, and a control unit (118) for controlling a planar movement, an inclination movement and a rotation movement of the sample stage so as to allow the observation position entered from the operation input unit to be observed with the EBSD detector.

Abstract: The movement distance of a second adjustment slider 204 is made shorter than that of a first adjustment slider 205 if the first adjustment slider 205 is positioned in a displayed range, except at both ends thereof, of a set value adjustment axis 203 in a first set value adjustment axis display part 202. The first adjustment slider 205 is kept unmoved while the second adjustment slider 204 alone is moved in the direction of one of both ends of the displayed range if the first adjustment slider 205 is positioned at least at the one of both ends of the displayed range of the set value adjustment axis 203 in the first set value adjustment axis display part 202, if the second adjustment slider 204 is also positioned in the displayed range except at the both ends thereof, and if the first adjustment slider 205 is to be selectively operated by a cursor 220. This structure allows coarse and fine adjustments of set values for operation control to be carried out easily and accurately.

Abstract: A charged particle beam device allowing an analysis position in a sample analyzable with an EBSD detector to be acquired beforehand, and allowing a sample to be adjusted to a desired analysis position in a short time. A charged particle beam device is provided with a charged particle source (111), a charged particle optical system (115), an EBSD detector (101), a sample stage (116), an image display unit (117) for displaying a portion of the sample observable with the EBSD detector and a non-observable portion of the sample such that said portions are distinguished from each other, an operation input unit (121) where a position to be observed by the EBSD detector is entered, and a control unit (118) for controlling a planar movement, an inclination movement and a rotation movement of the sample stage so as to allow the observation position entered from the operation input unit to be observed with the EBSD detector.

Abstract: The present invention relates to enabling a versatile charged particle beam device, which is used for a wide range of kinds of samples to be observed and has parameters of emission conditions of a primary charged particle beam that is difficult to be registered in advance, to be operated easily and accurately even by a less-experienced operator and to obtain high-resolution images.

Abstract: The movement distance of a second adjustment slider 204 is made shorter than that of a first adjustment slider 205 if the first adjustment slider 205 is positioned in a displayed range, except at both ends thereof, of a set value adjustment axis 203 in a first set value adjustment axis display part 202. The first adjustment slider 205 is kept unmoved while the second adjustment slider 204 alone is moved in the direction of one of both ends of the displayed range if the first adjustment slider 205 is positioned at least at the one of both ends of the displayed range of the set value adjustment axis 203 in the first set value adjustment axis display part 202, if the second adjustment slider 204 is also positioned in the displayed range except at the both ends thereof, and if the first adjustment slider 205 is to be selectively operated by a cursor 220. This structure allows coarse and fine adjustments of set values for operation control to be carried out easily and accurately.

Abstract: In many cases, the charged particle beam apparatus is used basically for observation at a magnification of 10,000 times or higher. It is thus difficult to recognize how the orientation of a sample seen with the naked eye corresponds to the origination of the sample appearing on an acquired image. This makes it difficult intuitively to grasp the tilt direction and other details of the sample. An object of this invention is to provide a charged particle beam apparatus allowing the orientation and the tilted state of the sample to be grasped intuitively.

Abstract: In many cases, the charged particle beam apparatus is used basically for observation at a magnification of 10,000 times or higher. It is thus difficult to recognize how the orientation of a sample seen with the naked eye corresponds to the origination of the sample appearing on an acquired image. This makes it difficult intuitively to grasp the tilt direction and other details of the sample. An object of this invention is to provide a charged particle beam apparatus allowing the orientation and the tilted state of the sample to be grasped intuitively.

Abstract: Skills of a novice user operating a charged particle beam apparatus can be improved. Provided are an image display device which displays operation items of an electron microscope on an operation screen, a storage device which stores information of assist buttons which display image state information acquired via a detector of the electron microscope such that the information of assist buttons is correspondent to image quality of the image thus acquired as well as to observation conditions composed of a combination of parameter setting values of the electron microscope, an operation program which analyzes the image quality of the image acquired via the detector, acquires the information of the assist buttons based on analytical results of the image quality of the image as well as current observation conditions, and makes the assist buttons be displayed on the predetermined part of the operation screen.

Abstract: The high magnification, high resolution and real-time property of an SEM image are realized when the electrical characteristics of an inspection object are measured, without affecting the electrical characteristics of the inspection object. A high-quality, high-magnification first image including an image of a target position in the inspection object on a sample is acquired. Next, a low-quality, low-magnification second image including the image of the target position in the inspection object on the sample and probe images is acquired. Next, data on the first image is built into the second image to generate an image for coarse-access observation which is the same in magnification as the second image. The generation of the image for coarse-access observation is repeated until a probe comes close to the target position in the inspection object.

Abstract: Proposed is a technique of emphasizing a change in absorbed current obtained from a faulty part in a wiring section as a testing target more than in other parts of the wiring section. A specimen testing device is configured to output an image of absorbed current output from two probes during scanning of an electron beam so as to be operatively associated with the scanning of the electron beam and includes the following mechanism. When a faulty part of a wiring section on the specimen side with which two probes are in contact is irradiated with an electron beam, the resistance value at the faulty part changes more than that of irradiation of a normal wiring section with the electron beam. Such a change in resistance value is detected as a change in ratio between a resistance value of the wiring section specified by the two probes and a known resistance value.

Abstract: A specified position in an array structure in which a reference pattern is displayed repetitively through reference pattern counting is identified. In an array structure image, the pattern detection estimating area generated from a starting point, the address of the starting point, and a unit vector are compared with a pattern detected position found in pattern matching with the reference pattern image, to execute pattern counting while determining correct detection, oversights, wrong detection, etc. Array structure images are photographed sequentially while moving the visual field with the use of an image shifting deflector to continue the pattern counting started at the starting point to identify the ending point specified with an address. If the ending point is not reached only with use of the image shifting deflector, the visual field moving range of the image shifting deflector is moved with use of a specimen stage.

Abstract: The high magnification, high resolution and real-time property of an SEM image are realized when the electrical characteristics of an inspection object are measured, without affecting the electrical characteristics of the inspection object. A high-quality, high-magnification first image including an image of a target position in the inspection object on a sample is acquired. Next, a low-quality, low-magnification second image including the image of the target position in the inspection object on the sample and probe images is acquired. Next, data on the first image is built into the second image to generate an image for coarse-access observation which is the same in magnification as the second image. The generation of the image for coarse-access observation is repeated until a probe comes close to the target position in the inspection object.

Abstract: Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.

Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Abstract: A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.