Patents by Inventor Tohru Furuyama

Tohru Furuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080250231
    Abstract: A program conversion apparatus includes: a code analyzing section configured to analyze an A binary code executable in an A processor in order to convert the A binary code into a program code for a B processor; a instruction function extracting section configured to extract a predetermined instruction function for the B processor which corresponds to a predetermined instruction for the A processor obtained by the analysis performed by the code analyzing section; and a translator section configured to generate a source code for the B processor from the A binary code, by rewriting the predetermined instruction for the A processor to the predetermined instruction function extracted by the instruction function extracting section.
    Type: Application
    Filed: March 31, 2008
    Publication date: October 9, 2008
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroki TAGAWA, Tohru FURUYAMA, Nobu MATSUMOTO
  • Patent number: 6381186
    Abstract: A dynamic random access memory includes a plurality of dynamic memory cells arranged in rows and columns, a word line connected to the memory cells on the same row, a bit line connected to the memory cells on the same column, a word line selecting circuit having a word line selecting function of selecting an arbitrary one of the rows in response to an internal address signal, a word line driving voltage source, a word line driving circuit having at least one driving MOS transistor connected between the word line driving voltage source and the word line, for driving the word line in response to an output signal of the word line selecting circuit, and a control circuit for, in response to a voltage stress test control signal input from outside, controlling the word line driving circuit so that the word line driving circuit drives word lines more than those selected in a normal operation mode upon receiving an external address signal.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: April 30, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Okamura, Tohru Furuyama
  • Publication number: 20020048205
    Abstract: A dynamic random access memory according to the present invention comprises a plurality of dynamic memory cells arranged in rows and columns, a word line connected to the memory cells on the same row, a bit line connected to the memory cells on the same column, a word line selecting circuit having a word line selecting function of selecting an arbitrary one of the rows in response to an internal address signal, a word line driving voltage source, a word line driving circuit having at least one driving MOS transistor connected between the word line driving voltage source and the word line, for driving the word line in response to an output signal of the word line selecting circuit, and a control circuit for, in response to a voltage stress test control signal input from outside, controlling the word line driving circuit so that the word line driving circuit drives word lines more than those selected in a normal operation mode upon receiving an external address signal.
    Type: Application
    Filed: August 28, 2001
    Publication date: April 25, 2002
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Junichi Okamura, Tohru Furuyama
  • Patent number: 6317366
    Abstract: A semiconductor memory device includes a memory cell having a transfer N-channel MOS transistor and a capacitive element for storing data which is connected to the transfer N-channel MOS transistor, a word line connected to a gate of the transfer N-channel transistor, of the memory cell, a charge pump circuit generating an internal power supply voltage which is boosted up from a power supply voltage, and outputting the internal power supply voltage, and a decoder circuit which receives address signals and has a P-channel MOS transistor for receiving the internal power supply voltage, the decoder circuit generating a word line selecting signal.
    Type: Grant
    Filed: August 1, 2000
    Date of Patent: November 13, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Okamura, Tohru Furuyama
  • Patent number: 6307796
    Abstract: A dynamic random access memory includes a plurality of dynamic memory cells arranged in rows and columns, a word line connected to the memory cells on the same row, a bit line connected to the memory cells on the same column, a word line selecting circuit having a word line selecting function of selecting an arbitrary one of the rows in response to an internal address signal, a word line driving voltage source, a word line driving circuit having at least one driving MOS transistor connected between the word line driving voltage source and the word line, for driving the word line in response to an output signal of the word line selecting circuit, and a control circuit for, in response to a voltage stress test control signal input from outside, controlling the word line driving circuit so that the word line driving circuit drives word lines more than those selected in a normal operation mode upon receiving an external address signal.
    Type: Grant
    Filed: October 16, 2000
    Date of Patent: October 23, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Okamura, Tohru Furuyama
  • Patent number: 6166975
    Abstract: A dynamic random access memory includes a dynamic memory cell having a transfer N-channel MOS transistor and a capacitive element for storing data which is connected to the transfer N-channel MOS transistor, a word line connected to a gate of the transfer N-channel transistor, of the dynamic memory cell, and a word line driving voltage source, to which power voltage is input for raising the input power voltage to generate a word line driving voltage.
    Type: Grant
    Filed: December 21, 1999
    Date of Patent: December 26, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Okamura, Tohru Furuyama
  • Patent number: 6101148
    Abstract: A dynamic random access memory includes a dynamic memory cell having a transfer N-channel MOS transistor and a capacitive element for storing data which is connected to the transfer N-channel MOS transistor, a word line connected to a gate of the transfer N-channel transistor, of the dynamic memory cell, and a word line driving voltage source, to which power voltage is input for raising the input power voltage to generate a word line driving voltage.
    Type: Grant
    Filed: August 6, 1997
    Date of Patent: August 8, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Okamura, Tohru Furuyama
  • Patent number: 5890186
    Abstract: When data stored in a memory cell of a memory cell array is written into cache memory, a write signal LW is set at an "H" level. The write signal LW is input into a data-line pair initialization select circuit via an initialization control circuit, and a signal EQE is set at an "H" level in all columns. A data-line pair initialization circuit then sets the potential of the data-line pairs in all columns at the same level. When the write signal LW is input to a transfer gate via a transfer gate control circuit, the transfer gates in all columns are turned ON. The delay time of the transfer gate control circuit is the same as or greater than the delay time of the initialization control.
    Type: Grant
    Filed: July 17, 1997
    Date of Patent: March 30, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuhiko Sato, Shinji Miyano, Tomoaki Yabe, Tohru Furuyama
  • Patent number: 5754481
    Abstract: A semiconductor memory device includes a memory cell array, row decoder, bit line pairs, sense amplifier, sense amplifier control circuit, data latch, transfer gate, transfer gate control circuit, and write circuit. The memory cell array has dynamic memory cells arranged in an array form. The row decoder decodes a row address signal to select a desired one of rows of the memory cell array. Each of the bit line pairs is connected to those of the memory cells which are arranged on a corresponding one of columns of the memory cell array. The sense amplifier amplifies data read out on the paired bit lines and positively feeding data back to the paired bit lines to hold the data. The sense amplifier control circuit controls the operation of the sense amplifier. The data latch latches readout data and write data. The transfer gate transfers data between the data latch and the sense amplifier. The transfer gate control circuit controls the transfer gate.
    Type: Grant
    Filed: May 16, 1997
    Date of Patent: May 19, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki Yabe, Kenji Numata, Katsuhiko Sato, Ryo Haga, Shinji Miyano, Tohru Furuyama
  • Patent number: 5673229
    Abstract: A dynamic random access memory includes a dynamic memory cell having a transfer N-channel MOS transistor and a capacitive element for storing data which is connected to the transfer N-channel MOS transistor, a word line connected to a gate of the transfer N-channel transistor, of the dynamic memory cell, and a word line driving voltage source, to which power voltage is input for raising the input power voltage to generate a word line driving voltage.
    Type: Grant
    Filed: March 8, 1996
    Date of Patent: September 30, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Okamura, Tohru Furuyama
  • Patent number: 5659507
    Abstract: A semiconductor memory device includes a memory cell array, row decoder, bit line pairs, sense amplifier, sense amplifier control circuit, data latch, transfer gate, transfer gate control circuit, and write circuit. The memory cell array has dynamic memory cells arranged in an array form. The row decoder decodes a row address signal to select a desired one of rows of the memory cell array. Each of the bit line pairs is connected to those of the memory cells which are arranged on a corresponding one of columns of the memory cell array. The sense amplifier amplifies data read out on the paired bit lines and positively feeding data back to the paired bit lines to hold the data. The sense amplifier control circuit controls the operation of the sense amplifier. The data latch latches readout data and write data. The transfer gate transfers data between the data latch and the sense amplifier. The transfer gate control circuit controls the transfer gate.
    Type: Grant
    Filed: November 25, 1996
    Date of Patent: August 19, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki Yabe, Kenji Numata, Katsuhiko Sato, Ryo Haga, Shinji Miyano, Tohru Furuyama
  • Patent number: 5568436
    Abstract: A semiconductor device comprising a plurality of circuit blocks to which various potentials, including at least one potential either raised or lowered, are assigned. The device further comprises means for selectively and reversely changing the potentials assigned to the circuit blocks.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 22, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tohru Furuyama
  • Patent number: 5553024
    Abstract: An improved semiconductor memory device such as a dynamic random access memory (DRAM) includes a latch circuit and an output buffer. The latch circuit latches first data read out from one memory cell of a memory cell array during one cycle of a row address strobe (RAS) signal and during one cycle of a column address strobe (CAS) signal. During another cycle of the row address strobe signal and during another cycle of the column address strobe signal, the first data is transferred from the latch circuit to the output buffer and the latch circuit latches second data read out from another memory cell of the memory cell array. The use of the latch circuit and output buffer reduces access time and increases the data transfer rate of the memory device.
    Type: Grant
    Filed: April 10, 1995
    Date of Patent: September 3, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tohru Furuyama
  • Patent number: 5532963
    Abstract: A semiconductor memory comprises a dynamic type memory cell array arranged to form a matrix and provided with word lines commonly connected to memory cells of respective columns and bit lines commonly connected to memory cells of respective rows, a dummy cell section having a first set of dummy word lines connected to respective complimentary bit line pairs of said memory cell array by way of respective first capacitances and a second set of dummy word lines connected to respective complementary bit line pairs of said memory cell array by way of respective second capacitances, a dummy word line potential control circuit capable of optionally controlling the mode of driving selected dummy word lines when said word lines of said memory cell array are activated and sense amplifiers connected to the respective complementary bit line pairs of said memory cell array for reading data from selected memory cells of the memory cell array onto the related bit line.
    Type: Grant
    Filed: September 5, 1995
    Date of Patent: July 2, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Natsuki Kushiyama, Tohru Furuyama, Kenji Numata
  • Patent number: 5525820
    Abstract: A semiconductor memory cell of the present invention comprises a cascade gate including a plurality of cascade-connected MOS transistors and having one end connected to a read/write node, and a plurality of capacitors for information storage connected at one end to said MOS transistors, respectively, at the end remote from said node.
    Type: Grant
    Filed: August 2, 1994
    Date of Patent: June 11, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tohru Furuyama
  • Patent number: 5506540
    Abstract: A bias voltage generation circuit has a bias voltage generation means and a VBB detector. The bias voltage generation means is made up of a charge pump circuit, and a ring oscillator for biasing a P-type region to have a predetermined potential level. The VBB detector detects the bias level of the P-type region and controls the bias generation means. The VBB detector incorporates a bias level detection circuit, and two delay circuits which are controlled on the basis of a signal appearing at an output node N2 of the bias level detection circuit. The ring oscillator is controlled on the basis of outputs of the two delay circuits. One of the two delay circuits has a higher detection level and is therefore less responsive to the signal at the output node N2 than the other delay circuit, but provides a shorter delay time than that provided by the other delay circuit.
    Type: Grant
    Filed: February 25, 1994
    Date of Patent: April 9, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kiyofumi Sakurai, Tohru Furuyama
  • Patent number: 5500815
    Abstract: A semiconductor memory cell comprises a first cascade gate, formed on a semiconductor substrate, having its end connected to a first node, and a plurality of MOS transistors which are connected in cascade, a plurality of data storage capacitors, formed on the semiconductor substrate, each of which has its end connected to that end of a corresponding one of the MOS transistors which is opposite to the first node, and a device isolation MOS transistor formed between the memory cell and another semiconductor memory cell which are arranged side by side on the semiconductor substrate.
    Type: Grant
    Filed: November 25, 1992
    Date of Patent: March 19, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoru Takase, Tohru Furuyama
  • Patent number: 5479370
    Abstract: A semiconductor memory of this invention comprises a memory cell array containing memory cells arranged in matrix form, word lines each connected to all the memory cells in the same row, and bit lines each connected to all the memory cells in the same column, a shift register containing a plurality of stages of shift circuits which is used as a serial address pointer for serially specifying the addresses of actually used rows and/or columns in the memory cell array, a bypass circuit capable of forming a bypass for the shift circuit at a given stage of the shift register, and a bypass control circuit for determining whether or not a bypass is to be formed by the bypass circuit.
    Type: Grant
    Filed: January 23, 1995
    Date of Patent: December 26, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tohru Furuyama, Donald C. Stark
  • Patent number: 5444652
    Abstract: A semiconductor memory device includes a memory cell array having a plurality of dynamic memory cells each of which has a plurality of cascade-connected MOS transistors and data storing capacitors each connected at one end to one end of a corresponding one of the MOS transistors, registers each provided for a corresponding one of columns of the memory cell array, for temporarily storing data time-sequentially read out from the memory cell; and switching elements for controlling the respective registers to be accessed independently from the memory cell array.
    Type: Grant
    Filed: February 3, 1994
    Date of Patent: August 22, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tohru Furuyama
  • Patent number: RE37184
    Abstract: A semiconductor memory comprises a dynamic type memory cell array arranged to form a matrix and provided with word lines commonly connected to memory cells of respective columns and bit lines commonly connected to memory cells of respective rows, a dummy cell section having a first set of dummy word lines connected to respective complimentary bit line pairs of said memory cell array by way of respective first capacitances and a second set of dummy word lines connected to respective complementary bit line pairs of said memory cell array by way of respective second capacitances, a dummy word line potential control circuit capable of optionally controlling the mode of driving selected dummy word lines when said word lines of said memory cell array are activated and sense amplifiers connected to the respective complementary bit line pairs of said memory cell array for reading data from selected memory cells of the memory cell array onto the related bit line.
    Type: Grant
    Filed: July 1, 1998
    Date of Patent: May 22, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Natsuki Kushiyama, Tohru Furuyama, Kenji Numata