Abstract: A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

Abstract: A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

Abstract: A non-volatile memory of a semiconductor device has a tunnel insulation film provided on the active area; a floating gate electrode provided on the tunnel insulation film; a control gate electrode provided over the floating gate electrode; and an inter-electrode insulation film provided between the floating gate electrode and the control gate electrode, wherein, in a section of the non-volatile memory cell in a channel width direction, a dimension of a top face of the active area in the channel width direction is equal to or less than a dimension of a top face of the tunnel insulation film in the channel width direction, and the dimension of the top face of the tunnel insulation film in the channel width direction is less than a dimension of a bottom face of the floating gate electrode in the channel width direction.

Abstract: A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

Abstract: A non-volatile memory of a semiconductor device has a tunnel insulation film provided on the active area; a floating gate electrode provided on the tunnel insulation film; a control gate electrode provided over the floating gate electrode; and an inter-electrode insulation film provided between the floating gate electrode and the control gate electrode, wherein, in a section of the non-volatile memory cell in a channel width direction, a dimension of a top face of the active area in the channel width direction is equal to or less than a dimension of a top face of the tunnel insulation film in the channel width direction, and the dimension of the top face of the tunnel insulation film in the channel width direction is less than a dimension of a bottom face of the floating gate electrode in the channel width direction.

Abstract: A nonvolatile semiconductor memory device includes a memory cell which stores data and which is capable of being rewritten electrically, a bit line which is connected electrically to one end of a current path of the memory cell, a control circuit which carries out a verify operation to check a write result after data is written to the memory cell, and a voltage setting circuit which sets a charging voltage for the bit line in a verify operation and a read operation and makes a charging voltage in a read operation higher than a charging voltage in a verify operation.

Abstract: A system and method for disassembling and assembling a product. The system includes a production facility for assembling a product, a processing facility for disassembling a used product and offering the unit or parts of the used product for assembling the product after the unit and parts are processed, and a commonly-used processing facility for practicing mutually reversible steps between the process of assembling the product and the process of disassembling the used product and offering the unit and parts for assembling the product and/or for practicing steps which are identical for the assembling and disassembling processes. The method includes the steps of performing an assembling process, performing a disassembling process, and performing in a commonly-used processing facility mutually reversible steps between the assembling and disassembling process and/or performing steps which are identical for the assembling and disassembling processes.

Abstract: A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.

Abstract: A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.

Abstract: A system and method for disassembling and assembling a product. The system includes a production facility for assembling a product, a processing facility for disassembling a used product and offering the unit or parts of the used product for assembling the product after the unit and parts are processed, and a commonly-used processing facility for practicing mutually reversible steps between the process of assembling the product and the process of disassembling the used product and offering the unit and parts for assembling the product and/or for practicing steps which are identical for the assembling and disassembling processes. The method includes the steps of performing an assembling process, performing a disassembling process, and performing in a commonly-used processing facility mutually reversible steps between the assembling and disassembling process and/or performing steps which are identical for the assembling and disassembling processes.

Abstract: A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.

Abstract: A cleaning system and a cleaning method is provided with a cleaning medium comprising a magnetic substance and a magnetic field generating device for applying a magnetic force to the magnetic substance in the cleaning medium so that the magnetic substance and the area to be cleaned are rubbed together. The area to be cleaned is cleaned by the rubbing action of the cleaning medium. The interior of the cleaned object not reachable by hands or instruments can be easily cleaned with this device. The cleaning medium, made of a magnetic substance, is guided into the interior of the cleaned object. The magnetic field generating device generates a magnetic field in the cleaning medium and thereby applies a force to the magnetic substance. By rubbing the magnetic substance on the inner wall surface of the area to be clean, the object can be cleaned efficiently.

Abstract: A system and method for disassembling and assembling a product. The system includes a production facility for assembling a product, a processing facility for disassembling a used product and offering the unit or parts of the used product for assembling the product after the unit and parts are processed, and a commonly-used processing facility for practicing mutually reversible steps between the process of assembling the product and the process of disassembling the used product and offering the unit and parts for assembling the product and/or for practicing steps which are identical for the assembling and disassembling processes. The method includes the steps of performing an assembling process, performing a disassembling process, and performing in a commonly-used processing facility mutually reversible steps between the assembling and disassembling process and/or performing steps which are identical for the assembling and disassembling processes.

Abstract: A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.

Abstract: A cleaning system and a cleaning method is provided with a cleaning medium comprising a magnetic substance and a magnetic field generating device for applying a magnetic force to the magnetic substance in the cleaning medium so that the magnetic substance and the area to be cleaned are rubbed together. The area to be cleaned is cleaned by the rubbing action of the cleaning medium. The interior of the cleaned object not reachable by hands or instruments can be easily cleaned with this device. The cleaning medium, made of a magnetic substance, is guided into the interior of the cleaned object. The magnetic field generating device generates a magnetic field in the cleaning medium and thereby applies a force to the magnetic substance. By rubbing the magnetic substance on the inner wall surface of the area to be clean, the object can be cleaned efficiently.

Abstract: A system and method for disassembling and assembling a product. The system includes a production facility for assembling a product, a processing facility for disassembling a used product and offering the unit or parts of the used product for assembling the product after the unit and parts are processed, and a commonly-used processing facility for practicing mutually reversible steps between the process of assembling the product and the process of disassembling the used product and offering the unit and parts for assembling the product and/or for practicing steps which are identical for the assembling and disassembling processes. The method includes the steps of performing an assembling process, performing a disassembling process, and performing in a commonly-used processing facility mutually reversible steps between the assembling and disassembling process and/or performing steps which are identical for the assembling and disassembling processes.

Abstract: A cleaning system and a cleaning method is provided with a cleaning medium comprising a magnetic substance and a magnetic field generating device for applying a magnetic force to the magnetic substance in the cleaning medium so that the magnetic substance and the area to be cleaned are rubbed together. The area to be cleaned is cleaned by the rubbing action of the cleaning medium. The interior of the cleaned object not reachable by hands or instruments can be easily cleaned with this device. The cleaning medium, made of a magnetic substance, is guided into the interior of the cleaned object. The magnetic field generating device generates a magnetic field in the cleaning medium and thereby applies a force to the magnetic substance. By rubbing the magnetic substance on the inner wall surface of the area to be clean, the object can be cleaned efficiently.

Abstract: In a NAND cell type of EEPROM memory which has an STI (Shallow Trench Isolation) structure and uses memory cells into which two- or more-value data can be rewritten through the use of floating channel writing techniques, a plurality of floating gate electrodes are formed above the surface of an Si substrate with a tunnel oxide interposed therebetween. Trenches are formed in portions of the surface of the Si substrate each of which is located between floating gate electrodes arranged in one direction. In each trench, a conductive material is buried to form a buried electrode which is externally impressed with a low voltage. This boots the channel potential of nonselected cells, preventing erroneous writing without increasing the cost per bit. In particular, in such a structure that the buried electrode is formed only along each of the sidewalls of the trench, the voltages that are applied to the word line at write time can be rendered as low as possible by applying a negative potential to the buried electrode.

Abstract: In a method and an apparatus for removing an image forming substance such as toner from an image holding member such as a transfer paper sheet, the toner on the transfer paper sheet is heated to be melted or softened. An offset belt having adhesive force stronger than that between the transfer paper sheet and the toner comes in contact with the toner. The toner is separated and removed from the transfer paper sheet when the offset belt and the transfer paper sheet are separated from each other. Heating of the toner is maintained until the transfer paper sheet is separated from the offset belt. The transfer paper sheet is separated from the offset belt before the toner is cooled and solidified. A toner heating maintaining device is constructed by using a heating-supporting member having a heater therein and arranged such that the transfer paper sheet and the offset belt are supported between the heating-supporting member and a heating roller.

Abstract: An image forming substance removing apparatus for preventing an unstabilizing liquid from being excessively applied to a sheet material unnecessarily, preventing a bad state of transporting the sheet material, and not requiring a long time for drying the sheet material is provided. In the above-mentioned apparatus, an unstabilizing liquid supplying unit applies the unstabilizing liquid to the transfer material and is constructed with an applying roller for pumping up the unstabilizing liquid by an action of its rotation, a restriction roller for bringing the applying roller into contact with the transfer paper, and others. And further, in order to move the restriction roller between a position of coming into contact with the applying roller and a position of departing therefrom, a tip end sensor for sensing the tip end of the transfer paper, a spring, and a solenoid, etc. are provided in the apparatus.