Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer.

Abstract: A pattern projecting method is disclosed. The pattern projecting method has the step of illuminating a mask having a fine pattern formed therein with an exposure light and causing a transmitted light of the mask to be incident on a pupil of a projection optical system to project an image of the fine pattern onto a substrate, the illuminating step using an effective light source capable of achieving such light intensity distribution as to provide a predetermined light intensity in a central region of the pupil, a maximum light intensity in plural peripheral regions around the central region, and a light intensity lower than the maximum light intensity in a region connecting the plural regions.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, a method of forming the anti-reflective layer therewith and a method of forming a resist pattern using a novel anti-reflective layer obtained therewith. The optimum condition of the anti-reflective layer is determined and the anti-reflective layer is formed by the methods described below. Further, an optimal anti-reflective layer is obtained by the method which is used for forming the resist pattern.

Abstract: A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350.degree. C. to 500.degree. C., more preferably 350.degree. C. to 450.degree. C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer.

Abstract: An exposure device in which a reticle having a circuit pattern of a semiconductor device formed on it is irradiated with light beam emanated from a light source, such as a laser light source, for exposing the circuit pattern formed on the reticle on a semiconductor wafer. The exposure device includes a light beam generator for illuminating the reticle having a semiconductor circuit pattern formed on it, an image-forming optical system for forming an image on a wafer of a light image produced on radiating a light beam on the reticle from the light beam generator. The exposure device also includes a movement unit for moving the wafer relative to the image-forming optical system, and an alignment unit for detecting the position on the wafer of the image formed on the wafer by the image-forming optical system for position matching the image by the image-forming optical system relative to the wafer. The light beam generator includes a light source for excitation, a first resonator and a second resonator.

Abstract: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, a method of forming the anti-reflective layer therewith and a method of forming a resist pattern using a novel anti-reflective layer obtained therewith. The optimum condition of the anti-reflective layer is determined and the anti-reflective layer is formed by the methods described below. Further, an optimal anti-reflective layer is obtained by the method which is used for forming the resist pattern.

Abstract: An automatic gain control circuit which is provided in a demodulation section of a modem to adjust the loop gain so that the level of a band-limited receive signal may have a predetermined reference value and to output the receive signal to an automatic equalization section of the modem. The automatic gain control circuit is improved in that, even when a disturbance of the circuit such as a gain hit or a drop-out occurs, regular communication can be continued without requiring a data mode leading-in operation.

Abstract: A frequency multiplexing control system includes a first modem unit connected to a transmission line, and a second modem unit connected to the transmission line. The first and second modem units communicate with each other via a plurality of primary channels and a secondary channel. The primary and secondary channels have different frequency bands. A plurality of signal detection units are respectively provided in the first and second modem units, to detect an abnormal primary channel and send to the second and first modem units, information concerning the abnormal primary channel via the secondary channel. A plurality of disabling units are respectively provided in the first and second modem units, to disable the abnormal primary channel in response to the received information and to send a training signal for recovering the abnormal primary channel to the transmission line.

Abstract: A communication system in which a plurality of multipoint connected satellite stations are connected via down line and an up line to a master station. Each of the satellite stations monitors presence or absence of occurrence of an abnormality in the down line, judges whether the abnormality is present or not and, where the abnormality is present, informs the master station of the nature of the abnormality via the up line. In turn, the master station monitors presence or absence of an alarm indicating abnormality from each of the satellite stations, judges whether the alarm is detected or not and, where the alarm is detected, reads past record information concerning abnormality detection in the satellite station concerned and information on retraining execution time, then judges whether the down line is normal or not and, where the down line is normal, sends a training signal again to the down line to retrain a MODEM corresponding to the satellite station concerned.

Abstract: A high precision stepping aligner includes a stage for carrying thereon an object and drivable to move the object stepwise relative to an exposing position so as to align a plurality of portions of the object in succession with the exposing position, where each of the portions is exposed to exposure light. The stage is moved stepwise first in the X-direction and then in the Y-direction. Thereafter, the stepping movement in the X-direction and the stepping movement in the Y-direction are repeated one after another so that the stage traces a substantially spiral stepping pattern. A mirror for reflecting a beam of light for positioning the stage is disposed on the stage with a heat insulating material interposed therebetween.

Abstract: A composite catalyst which is capable of clarifying exhaust gas containing nitrogen oxides therein with a high effectiveness over a long period of time while producing no or a very small amount of undesirable by-products such as ammonia, which comprises a catalytic ingredient comprising oxides of nickel and copper in an atomic ratio of nickel to copper of 1:0.05 through 1 and a catalytic base comprising a refractory inorganic material containing at least 50% by weight of zircon therein, said catalytic ingredient being carried on said catalytic base.