Abstract: An active matrix substrate includes pixel regions each including a pixel electrode and an oxide semiconductor TFT including an oxide semiconductor layer. Each pixel electrode is electrically connected to one of adjacent two of source bus lines. The oxide semiconductor layer in the oxide semiconductor TFT of each pixel region overlaps the pixel electrode of a first adjacent pixel region. The pixel electrode of the each pixel region partially overlaps the oxide semiconductor layer in a second adjacent pixel region. The source bus lines include first and second source bus lines adjacent to each other. Pixels sets each including two pixel regions whose pixel electrodes are connected to the first source bus line and pixel sets each including two pixel regions whose pixel electrodes are connected to the second source bus line are arranged alternately between the first and second source bus lines.

Abstract: An active matrix substrate is to be mounted on a display panel with a touch sensor function. The active matrix substrate includes a first layer provided with a touch sensor line, a second layer being above the touch sensor line and being provided with a pixel electrode, and a common electrode as a third layer formed between the first layer and the second layer. The common electrode functions as a touch sensor electrode by being connected to the touch sensor line and also functions as a counter electrode of the pixel electrode. The active matrix substrate further includes a first insulating layer formed between the first layer and the third layer, and a second insulating layer formed between the second layer and the third layer. The first insulating layer is formed of an organic resin film.

Abstract: An active matrix substrate includes pixel regions each including a pixel electrode and an oxide semiconductor TFT including an oxide semiconductor layer. Each pixel electrode is electrically connected to one of adjacent two of source bus lines. The oxide semiconductor layer in the oxide semiconductor TFT of each pixel region overlaps the pixel electrode of a first adjacent pixel region. The pixel electrode of the each pixel region partially overlaps the oxide semiconductor layer in a second adjacent pixel region. The source bus lines include first and second source bus lines adjacent to each other. Pixels sets each including two pixel regions whose pixel electrodes are connected to the first source bus line and pixel sets each including two pixel regions whose pixel electrodes are connected to the second source bus line are arranged alternately between the first and second source bus lines.

Abstract: A bearing raceway ring (25) disposed near a mounting section (9) is disposed on the outer periphery of a circular cylinder section (19). A fluid-sealed chamber (40) in which a measurement liquid is hermetically enclosed is provided between a first member (8) and the bearing raceway ring (25) which is disposed near the mounting section (9). Pressure acting on the fluid to be measured changes as the bearing raceway ring (25) moves in the cylinder-axis direction, the bearing raceway ring (25) being disposed near the mounting section (9). The fluid-sealed chamber (40) is provided with a pressure sensor (44) capable of detecting a change in the pressure of the fluid to be measured.

Abstract: In order to implement a structure capable of improving the resolution of torque measurement while preventing the plastic deformation of a torsion bar (15), an input-side stopper (61) having an uneven shape (gear shape) in the circumferential direction is provided in a portion of an input-side rotating body (55) that includes an input shaft (13) and an input gear (7), and an output-side stopper (63) having an uneven shape (gear shape) in the circumferential direction is provided in a portion of an output-side rotating body (56) that includes an output shaft (14) and an output gear (8). The input-side stopper (61) and the output-side stopper (63) are combined so as to be engaged to be able to transmit torque only when the torsional angle within the elastic range of the torsion bar (15) reaches a predetermined amount.

Abstract: In order to implement a structure capable of improving the resolution of torque measurement while preventing the plastic deformation of a torsion bar (15), an input-side stopper (61) having an uneven shape (gear shape) in the circumferential direction is provided in a portion of an input-side rotating body (55) that includes an input shaft (13) and an input gear (7), and an output-side stopper (63) having an uneven shape (gear shape) in the circumferential direction is provided in a portion of an output-side rotating body (56) that includes an output shaft (14) and an output gear (8). The input-side stopper (61) and the output-side stopper (63) are combined so as to be engaged to be able to transmit torque only when the torsional angle within the elastic range of the torsion bar (15) reaches a predetermined amount.

Abstract: A bearing residual life prediction method, a bearing residual life diagnostic apparatus and a bearing diagnostic system can be provided. The bearing diagnostic system 20 includes: an eddy current tester 11 that measures the impedance X of a certain portion of a bearing 24 before and after the use of the bearing; a bearing information transmitter 30 that transmits bearing information s1 containing the impedance X; and a bearing information receiver 31 that receives the information; a diagnostic section 12 that obtains the residual life information s2 of the bearing 24 based on the received impedance X; and a life information transmitter 36 that transmits the residual life information s2; and a life information receiver 40 that receives the information. Hence, the bearing used by the user can be inspected nondestructively, and the residual life of the bearing can be predicted.

Abstract: A bearing residual life prediction method, a bearing residual life diagnostic apparatus and a bearing diagnostic system can be provided. The bearing diagnostic system 20 includes: an eddy current tester 11 that measures the impedance X of a certain portion of a bearing 24 before and after the use of the bearing; a bearing information transmitter 30 that transmits bearing information s1 containing the impedance X; and a bearing information receiver 31 that receives the information; a diagnostic section 12 that obtains the residual life information s2 of the bearing 24 based on the received impedance X; and a life information transmitter 36 that transmits the residual life information s2; and a life information receiver 40 that receives the information. Hence, the bearing used by the user can be inspected nondestructively, and the residual life of the bearing can be predicted.

Abstract: A roughness of an outer ring raceway surface 14 formed on an inner peripheral surface of an outer ring 13 is made larger than a roughness of inner ring raceway surfaces 12a, 12b of an inner ring 11. Also, an average roughness Ra of the outer ring raceway surface 14 is set within 0.1 ?m?Ra?0.5 ?m in an axial direction and a circumferential direction in ranges of b1/(B/2)?0.9, b2/ (B/2)?0.9 and in a measured length of 0.1 mm to 1.0 mm where B is a width of the outer ring 13 and b1, b2 are a distance from both end surfaces of the outer ring 13 in the axial direction respectively. A roughness parameter S of the outer ring raceway surface is set within 0<S?20 ?m.

Abstract: A roughness of an outer ring raceway surface 14 formed on an inner peripheral surface of an outer ring 13 is made larger than a roughness of inner ring raceway surfaces 12a, 12b of an inner ring 11. Also, an average roughness Ra of the outer ring raceway surface 14 is set within 0.1 ?m?Ra?0.5 ?m in an axial direction and a circumferential direction in ranges of b1/(B/2)?0.9, b2/ (B/2)?0.9 and in a measured length of 0.1 mm to 1.0 mm where B is a width of the outer ring 13 and b1, b2 are a distance from both end surfaces of the outer ring 13 in the axial direction respectively. A roughness parameter S of the outer ring raceway surface is set within 0<S?20 ?m.

Abstract: The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.

Abstract: A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.

Abstract: The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.

Abstract: The active matrix substrate of the invention includes: a storage capacitor formed on a board; a first insulating layer formed on the storage capacitor; a semiconductor layer formed above the storage capacitor via the first insulating layer: a gate insulating layer formed on the semiconductor layer; a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer; a second insulating layer covering the gate electrode layer and the semiconductor layer; a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer; a third insulating layer formed on the first light-shielding layer; a source electrode layer including source and drain electrodes formed on the third insulating layer; a fourth insulating layer formed on the source electrode layer; and a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode.

Abstract: The invention involves: the forming of a dummy pattern for planarization between convex portions (for example, between lead electrodes and a signal wire pattern) of irregularities caused by a patterned layer on a surface on which at least one interlayer insulating film is formed, so as to be separated by a predetermined distance from the convex portions; the forming of interlayer insulating films 7a-7d so as to fill up gaps between the dummy pattern and the convex portions; and the planarizing of a surface. Thereby, the invention is capable of relaxing requirements on uniformity in the thickness of the film to be polished and the thickness of the polished portion.

Abstract: An active matrix substrate of the present invention has a substrate, a thin-film transistor and a capacitive element provided on the principal plane of the substrate, and a scanning line for supplying a scanning signal to the thin-film transistor, in which the thin-film transistor has a semiconductor layer including a channel region and a gate electrode formed on the semiconductor layer. The capacitive element is located at a position opposite to the substrate at the both sides of the thin-film transistor. The scanning line is formed by a conductive layer different from the gate electrode and located at a position closer to the substrate than the semiconductor layer.

Abstract: The active matrix substrate of the invention includes: a storage capacitor formed on a board; a first insulating layer formed on the storage capacitor; a semiconductor layer formed above the storage capacitor via the first insulating layer: a gate insulating layer formed on the semiconductor layer; a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer; a second insulating layer covering the gate electrode layer and the semiconductor layer; a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer; a third insulating layer formed on the first light-shielding layer; a source electrode layer including source and drain electrodes formed on the third insulating layer; a fourth insulating layer formed on the source electrode layer; and a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode.

Abstract: A thin-film transistor includes: a pair of n-type heavily doped regions that are horizontally spaced apart from each other; p-type channel regions that are located between the n-type heavily doped regions so as to face their associated gate electrodes, respectively; an n-type intermediate region provided between two adjacent ones of the channel regions; and two pairs of lightly doped regions. The lightly doped regions in one of the two pairs have mutually different carrier concentrations and are located between one of the heavily doped regions and one of the channel regions that is closer to the heavily doped region than any other channel region is. The lightly doped regions in the other pair also have mutually different carrier concentrations and are located between the other heavily doped region and another one of the channel regions that is closer to the heavily doped region than any other channel region is.

Abstract: In a transmission type liquid crystal display device, a semiconductor thin film is formed for each pixel below a signal wiring, a gate wiring, an auxiliary capacitance wiring and a lead electrode which are made of a light shading material via an insulating film. A region that belongs to the semiconductor thin film and is located below the signal wiring and below the gate wiring is made to serve as a channel region of a TFT. Regions that belong to the semiconductor thin film and are located on both sides of the channel region below the signal wiring are made to serve as a source region and a drain region of the TFT, respectively. Further, a region that belongs to the semiconductor thin film and is located below the auxiliary capacitance wiring is made to serve as an auxiliary capacitance electrode region.

Abstract: A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.