Tohru Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: In a transmission type liquid crystal display device, a semiconductor thin film is formed for each pixel below a signal wiring, a gate wiring, an auxiliary capacitance wiring and a lead electrode which are made of a light shading material via an insulating film. A region that belongs to the semiconductor thin film and is located below the signal wiring and below the gate wiring is made to serve as a channel region of a TFT. Regions that belong to the semiconductor thin film and are located on both sides of the channel region below the signal wiring are made to serve as a source region and a drain region of the TFT, respectively. Further, a region that belongs to the semiconductor thin film and is located below the auxiliary capacitance wiring is made to serve as an auxiliary capacitance electrode region.
Abstract: A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.
Abstract: An a-Si film 12 is formed on the whole surface of a quartz substrate 11, and a protection film 13 is formed in a region to be used as a display unit on the a-Si film 12. Subsequently, after a catalyst metal is selectively introduced into the whole surface of a region to be used as a peripheral drive circuit on the a-Si film 12, crystal growth is allowed by heating the a-Si film 12 to form a CG silicon film 14 and a p-Si film 15. Then, the catalyst metal in the CG silicon film 14 and the p-Si film 15 is removed by gettering. The concentration of the catalyst metal in the CG silicon film 14 is in the range of 1×1013 atoms/cm13 or higher and lower than 1×1015 atoms/cm3. The concentration of the catalyst metal in the p-Si film for a display unit 15 is made lower than the concentration of the catalyst metal in the CG silicon film 14b for a peripheral drive circuit.
Abstract: The invention involves: the forming of a dummy pattern for planarization between convex portions (for example, between lead electrodes and a signal wire pattern) of irregularities caused by a patterned layer on a surface on which at least one interlayer insulating film is formed, so as to be separated by a predetermined distance from the convex portions; the forming of interlayer insulating films 7a-7d so as to fill up gaps between the dummy pattern and the convex portions; and the planarizing of a surface. Thereby, the invention is capable of relaxing requirements on uniformity in the thickness of the film to be polished and the thickness of the polished portion.
Abstract: A liquid crystal display device provided with an insulating substrate, a thin film transistor formed on the insulating substrate, and a pixel electrode and a storage capacitor electrically connected to the thin film transistor, includes a first conductive layer formed on the insulating substrate; a first insulating layer formed on the first conductive layer and having an opening for exposing a part of the first conductive layer; a second conductive layer formed on the first conductive layer at least within the opening; a second insulating layer for covering the second conductive layer; and a third conductive layer for covering the second insulating layer at least within the opening, and the storage capacitor is formed from a stacked layer structure including the second conductive layer, the second insulating layer and the third conductive layer.
Abstract: An a-Si film 12 is formed on the whole surface of a quartz substrate 11, and a protection film 13 is formed in a region to be used as a display unit on the a-Si film 12. Subsequently, after a catalyst metal is selectively introduced into the whole surface of a region to be used as a peripheral drive circuit on the a-Si film 12, crystal growth is allowed by heating the a-Si film 12 to form a CG silicon film 14 and a p-Si film 15. Then, the catalyst metal in the CG silicon film 14 and the p-Si film 15 is removed by gettering. The concentration of the catalyst metal in the CG silicon film 14 is in the range of 1×1013 atoms/cm3 or higher and lower than 1×1015 atoms/cm3. The concentration of the catalyst metal in the p-Si film for a display unit 15 is made lower than the concentration of the catalyst metal in the CG silicon film 14b for a peripheral drive circuit.
Abstract: A thin-film transistor includes: a pair of n-type heavily doped regions that are horizontally spaced apart from each other; p-type channel regions that are located between the n-type heavily doped regions so as to face their associated gate electrodes, respectively; an n-type intermediate region provided between two adjacent ones of the channel regions; and two pairs of lightly doped regions. The lightly doped regions in one of the two pairs have mutually different carrier concentrations and are located between one of the heavily doped regions and one of the channel regions that is closer to the heavily doped region than any other channel region is. The lightly doped regions in the other pair also have mutually different carrier concentrations and are located between the other heavily doped region and another one of the channel regions that is closer to the heavily doped region than any other channel region is.
Abstract: A nanometer-size quantum thin line is formed on a semiconductor substrate of a Si substrate or the like by means of the general film forming technique, lithographic technique and etching technique. By opportunely using the conventional film forming technique, photolithographic technique and etching technique, a second oxide film that extends in the perpendicular direction is formed on an Si substrate. Then, by removing the second oxide film that extends in the perpendicular direction, a second nitride film located below the film and a first oxide film located below the film by etching, a groove for exposing the Si substrate is formed. Then, a Si thin line is made to epitaxially grow on the exposed portion of the Si substrate. The quantum thin line is thus formed without using any special fine processing technique. The width of the groove can be accurately controlled in nanometers by controlling the film thickness of the second oxide film that is formed by oxidizing the surface of the second nitride film.
Abstract: An amorphous silicon film is deposited on a quartz substrate, and a metal of Ni is introduced into the amorphous silicon film so that the amorphous silicon film is crystallized. Phosphorus is ion-implanted with an oxide pattern used as a mask. A heating process is performed in a nitrogen atmosphere, by which Ni is gettered. A heating process is performed in an O2 atmosphere, by which Ni is gettered into the oxide. Like this, by performing the first gettering in a non-oxidative atmosphere, the Ni concentration can be reduced to such a level that oxidation does not cause any increase of irregularities or occurrence of pinholes. Thus, in a second gettering, enough oxidation can be effected without minding any increase of irregularities and occurrence of pinholes, so that the Ni concentration can be reduced to an extremely low level. Also, a high-quality crystalline silicon film free from surface irregularities and pinholes can be obtained.
Abstract: There is provided a microstructure producing method capable of achieving satisfactory uniformity and reproducibility of the growth position, size and density of a minute particle or thin line and materializing a semiconductor device which can reduce the cost through simple processes without using any special microfabrication technique and has superior characteristics appropriate for mass-production with high yield and high productivity as well as a semiconductor device employing the microstructure. An oxide film 12 having a region 12a of a great film thickness and a region 12b of a small film thickness are formed on the surface of a semiconductor substrate 11. Next, a microstructure that is a thin line 15 made of silicon Si is selectively formed only on the surface of the small-film-thickness region 12b of the oxide film 12.
Abstract: There is provided is a semiconductor storage device that can reduce a dispersion in characteristics such as a threshold voltage and a writing performance and has a low consumption power and a non-volatility. There are included a source region 9 and a drain region 10 formed on a silicon substrate 1, a channel region 3a located between the source and drain regions 9 and 10, a gate electrode 8 that is formed above the channel region 3a and controls a channel current flowing through the channel region 3a, and a control gate insulating film 7, a floating gate 6 and a tunnel insulating film 4 that are arranged in order from the gate electrode 8 side between the channel region 3a and the gate electrode 8. The floating gate 6 is comprised of a plurality of crystal grains 6a linearly discretely arranged substantially parallel to the surface of the channel region 3a.
Abstract: A quantum dot and quantum fine wire forming method is provided which can allow control of the position for crystalline particle growth and enables formation of particles with high uniformity in size and density and with high reproducibility. After an Si substrate is formed with a step by a dry etching method, an SiO.sub.2 film is formed on the surface of the substrate. The interior of a reaction chamber is evacuated to a vacuum of 10.sup.-8 Torr, and then an Si.sub.2 H.sub.6 gas is introduced into the reaction chamber to flow therein so that Si crystal particles (quantum dots) are formed along the step. The step is formed by conventional photolithography and dry etching; therefore, the position for quantum dot growth can be easily controlled. By controlling the rate and time period of gas flow and the temperature of the substrate it is possible to form quantum fine wires, and to control the size of quantum dots and/or thickness of quantum fine wires.
Abstract: There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor nanocrystals, allows thickness of a insulating film between nanocrystals and channel region to be easily controlled and involves less variations in characteristics such as threshold and programming performance, and which is fast reprogrammable and has nonvolatility. Under a low pressure below atmospheric pressure, an amorphous silicon thin film 3 is deposited on a tunnel insulating film 2 formed on a silicon substrate 1.
Abstract: A semiconductor storage element has a source region, a drain region, and a channel region connecting the source region with the drain region, which each are formed on an insulation film of a substrate. A gate insulation film is formed between the channel region and a gate electrode. The source region, the drain region, and the channel region consist of an aggregate of spherical grains which are arranged two-dimensionally on the insulation film and connected with one another such that the adjacent spherical grains are conductive to one another. The channel region contains at least one carrier trap region provided at a location other than an electric path thereof.
Abstract: 2'-Methylidenepyrimidine nucleoside compounds of the general formula: ##STR1## wherein R.sup.1 stands for amino or hydroxy group; R.sup.2 stands for a halogen or a lower alkyl when R.sup.1 is amino or R.sup.2 stands for an alkyl having 2 to 4 carbon atoms, an alkynyl having 2 to 4 carbon atoms or a haloalkyl when R.sup.1 is hydroxy group; and R.sup.3 stands for hydrogen or a phosphoric acid residue, or salts thereof, anticancer compositions containing one or more of these compounds and methods for production of these compounds.Said compounds and salts thereof exhibit noticeable antitumor activities and are useful as anticancer agents.
Abstract: A process for preparing a compound of the formula: ##STR1## wherein R.sup.1 is a hydroxyl or an amino which may optionally be substituted; R.sup.2 is a hydrogen or a C.sub.1 -C.sub.4 alkyl; and R.sup.4a and R.sup.5a together represent a group of the formula: --R.sup.6 R.sup.7 Si--O--SiR.sup.6' R.sup.7', wherein R.sup.6, R.sup.7, R.sup.6' and R.sup.7' are the same or different and each is a C.sub.1 -C.sub.4 alkyl, which process comprises reacting a reducing agent and a cyanolating agent with a compound of the formula: ##STR2## wherein R.sup.9 is an alkoxythiocarbonyl having a C.sub.1 -C.sub.4 alkyl or an arylthiocarbonyl having a C.sub.6 -C.sub.10 aryl.
Abstract: The pyrimidine compounds of the present invention are represented by the following formula: ##STR1## and pharmaceutically acceptable salts thereof, wherein, R.sup.1 represents a hydroxyl or an amino which may be substituted by an acyl group; R.sup.2 represents a hydrogen atom or an alkyl having 1 to 4 carbons; R.sup.3 represents a hydrogen or a hydroxyl; and R.sup.4 and R.sup.5 each represent a hydrogen or together form a group --R.sup.6 R.sup.7 Si--O--SiR.sup.6' R.sup.7' --, wherein R.sup.6, R.sup.7, R.sup.6' and R.sup.7' are the same or different from one another and each represent an alkyl having 1 to 4 carbons. The compounds of the present invention exhibit an excellent antitumor effect.
Abstract: The present invention relates to a novel compound represented by the following formula [I] which is useful as a synthetic intermediate of a 2-alkynyladenosine.The present invention also relates to a process for producing the compound and a process for producing a 2-alkynyladenosine [IV] by way of the compound.Further, the present invention relates to a 2-alkynyladenosine derivative represented by the following formula [V] having excellent storage stability and, to a method of storing the 2-alkynyladenosine in the form of that derivative. ##STR1## [I] A=a leaving group, [II] A=NH.sub.2,[V] A=NHR.sup.4,wherein R.sup.1 through R.sup.4 represent a hydrogen atom or a protective group, and n denotes an integer of 1 to 15, provided that R.sup.1 through R.sup.4 do not represent a hydrogen atom simultaneously.
November 10, 1993
Date of Patent:
October 17, 1995
Yamasa Shoyu Kabushiki Kaisha, Toa Eiyo Ltd.
Abstract: Disclosed are novel 2'-alkylidenepyrimidine nucleoside derivatives represented by formula [I]: ##STR1## R.sup.1 is an amino group or a hydroxy group, R.sup.2 is a hydrogen atom, a halogen atom or a lower alkyl group, R.sup.3 is a hydrogen atom or a lower alkyl group, and R.sup.4 is a hydrogen atom or a phosphate residue, or salts thereof. These novel compounds can be produced from uridine or cytidine derivatives by alkylidenating the 2'-position in the sugar moiety thereof with Wittig's reagent. Furthermore, the compounds have remarkable antiviral activities and therefore can provide novel antiviral agents.
Abstract: 2'-Methylidenepyrimidine nucleoside compounds of the general formula: ##STR1## wherein R.sup.1 stands for amino or hydroxy group; R.sup.2 stands for a halogen or a lower alkyl when R.sup.1 is amino or R.sup.2 stands for an alkyl having 2 to 4 carbon atoms, an alkynyl having 2 to 4 carbon atoms or a haloalkyl when R.sup.1 is hydroxy group; and R.sup.3 stands for hydrogen or a phosphoric acid residue, or salts thereof, compositions containing one or more of these compounds and methods for production of these compounds are disclosed.Said compounds and salts thereof exhibit noticeable antitumor activities.