Abstract: A photovoltaic device is provided that prevents a short circuit in an p-n junction even if the distance between the electrodes on the n-type semiconductor strips and the electrodes on the p-type semiconductor strips is reduced. A photovoltaic device includes n-type amorphous semiconductor strips 102 and p-type amorphous semiconductor strips 102p provided on the back face of a semiconductor substrate 101. Separate electrodes 103 spaced apart from each other are provided on each semiconductor strip of at least one of the group of n-type amorphous semiconductor strips 102n and the group of p-type amorphous semiconductor strips 102p. A conductive part 302 is provided on the surfaces of the electrodes 103 and electrically connects the electrodes 103.

Abstract: A thin film transistor substrate (20a) includes an insulating substrate (10a), a semiconductor layer (13a) provided on the insulating substrate (10a) and having a channel region (C), and a channel protection layer (25) provided in the channel region (C). The channel protection layer (25) is made of a multilayer film in which first insulating films and second insulating films are alternately layered. A relationship between a refractive index Ra of the first insulating film and a refractive index Rb of the second insulating film is Rb/Ra?1.3.

Abstract: A display device includes a glass substrate, a glass substrate arranged at a distance from and opposite to the glass substrate, a lower electrode formed on the glass substrate, a counter electrode formed on the glass substrate opposite to the lower electrode, a spacer ball for supporting the glass substrate and the glass substrate to maintain a gap between the glass substrate and the glass substrate, and a plurality of conductive particles in particulate form arranged between the glass substrate and the glass substrate, a clearance being provided between the conductive particles positioned on the lower electrode and the counter electrode, the conductive particles positioned on the lower electrode being able to come into contact with the counter electrode when the glass substrate is pressed.

Abstract: A thin film transistor substrate (20a) includes an insulating substrate (10a), a semiconductor layer (13a) provided on the insulating substrate (10a) and having a channel region (C), and a channel protection layer (25) provided in the channel region (C). The channel protection layer (25) is made of a multilayer film in which first insulating films and second insulating films are alternately layered. A relationship between a refractive index Ra of the first insulating film and a refractive index Rb of the second insulating film is Rb/Ra?1.3.

Abstract: Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching, but also as a mask when ions are implanted to form a source/drain regions (39). Thus, phosphorus, which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain regions (39), is not implanted in the LDD region (38) and, accordingly, it is not necessary to additionally form a resist pattern to be used as a mask when ions are implanted.

Abstract: A display device includes a glass substrate, a glass substrate arranged at a distance from and opposite to the glass substrate, a lower electrode formed on the glass substrate, a counter electrode formed on the glass substrate opposite to the lower electrode, a spacer ball for supporting the glass substrate and the glass substrate to maintain a gap between the glass substrate and the glass substrate, and a plurality of conductive particles in particulate form arranged between the glass substrate and the glass substrate, a clearance being provided between the conductive particles positioned on the lower electrode and the counter electrode, the conductive particles positioned on the lower electrode being able to come into contact with the counter electrode when the glass substrate is pressed.

Abstract: A liquid crystal display device includes: a first glass substrate having a first main surface; a second glass substrate spaced apart from the first glass substrate; a liquid crystal layer filled between the second glass substrate and the first glass substrate; a switching element formed on the first main surface; a lower electrode arranged between the first main surface and a second main surface; an upper electrode spaced apart from the lower electrode and arranged on a second main surface side to face the lower electrode; and a detecting unit detecting an electrical signal defined by the upper electrode and the lower electrode. At least one of the upper electrode and the lower electrode can deform to conform to the other when the second glass substrate is pressed.

Abstract: A pressure detecting device includes a glass substrate as a substrate, a lower electrode arranged on the glass substrate, an upper electrode spaced apart from the lower electrode and facing the lower electrode, the upper electrode having holes as one or more through-openings, and a source line as a change extracting wiring for detecting a change in electrical state caused by the upper electrode receiving pressure to deflect toward the lower electrode.

Abstract: Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching, but also as a mask when ions are implanted to form a source/drain regions (39). Thus, phosphorus, which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain regions (39), is not implanted in the LDD region (38) and, accordingly, it is not necessary to additionally form a resist pattern to be used as a mask when ions are implanted.