Abstract: Provided is a method and system for stripping an ion implanted resist or performing a post-ash clean using a single substrate tool. Cleaning objectives and cleaning operating variables are selected for optimization. The first step immerses the substrate in a first treatment chemical, while concurrently irradiating the substrate with UV light, the process completed in a first process time, a first flow rate, and a first rotation speed of the substrate. The second step dispenses onto the substrate a second treatment chemical at a second temperature and a second composition, the second treatment chemical dispensed at a dispense temperature, and completed in a second process time and a second rotation speed. The two or more selected cleaning operating variables comprise UV wavelength, UV power, first concentration, first rotation speed, first flow rate, second process time, second rotation speed, percentage of residue removal, and dispense temperature.

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract: A liquid processing apparatus 200 includes a pure water supply source 20; a pure water flow rate control opening/closing valve 27; a sulfuric acid supply unit 30; a sulfuric acid supply opening/closing valve 34; mixing tanks 11 and 12 configured to mix pure water and sulfuric acid to produce a mixed chemical liquid and connected to a circulation line 100 having a circulation pump 101; a liquid processing unit 210 configured to perform a liquid process on a substrate W with the mixed chemical liquid. A controller 300 controls a pure water supply opening/closing valve 26, the sulfuric acid supply opening/closing valve 34, and the circulation pump 101, such that operation of the circulation pump 101 is started after starting supply of the pure water to the mixing tanks 11 and 12, and then, supply of sulfuric acid to the mixing tanks 11 and 12 is started.

Abstract: A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.

Abstract: A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

Abstract: A template for feeding a processing solution to predetermined positions of a substrate has multiple opening portions formed in positions on a front surface corresponding to the predetermined positions, flow channels penetrating from the opening portions to a back surface in a thickness direction for flowing a processing solution, first hydrophilic regions set to be hydrophilic around the opening portions on the front surface, and second hydrophilic regions set to be hydrophilic on inner surfaces of flow channels. The first hydrophilic regions are formed in positions corresponding to hydrophilic patterns set to be hydrophilic around the predetermined positions on a substrate surface.

Abstract: A substrate mounting table and a plasma etching apparatus can supply a power to a temperature controlling heater electrode effectively while preventing atmosphere from being leaked and preventing processing uniformity in a surface of a substrate from being deteriorated. The substrate mounting table and the plasma etching apparatus include an insulating member having therein an electrostatic chuck electrode and a temperature controlling heater electrode; a plate-shaped temperature controlling member having therein a temperature controlling medium path through which a temperature controlling medium is circulated; a cylindrical member made of an insulating material and provided within a through hole formed in the plate-shaped temperature controlling member; and a lead line, provided within the cylindrical member, having one end connected to the temperature controlling heater electrode and the other end connected to a connecting terminal provided at a bottom surface side of the cylindrical member.

Abstract: A cooling system can control a coolant temperature with a simple configuration. The cooling system 90 includes a vaporization vessel 80, a first fluid source 92, a first flow rate control unit 91, and a pressure control unit 99. The vaporization vessel 80 has a space, a supply opening 80a and a discharge opening 80b through which the coolant is supplied and discharged, respectively. The first fluid source 92 stores a first fluid having a vapor pressure higher than that of the coolant. The first flow rate control unit 91 connects the first fluid source 92 to the vaporization vessel 80 and controls a first fluid supply amount into the vaporization vessel. The pressure control unit 99 controls an internal pressure within the vaporization vessel to be higher than the vapor pressure of the coolant and equal to or lower than that of the first fluid.

Abstract: A process liquid changing method is provided for changing process liquids in a substrate processing apparatus including storage tank, a circulation line with a circulation pump, and a process liquid supply nozzle connected to the circulation line through a branch line. The method includes: discharging the process liquid in the storage tank; discharging a process liquid remaining in the circulation line from a drain connected to the circulation line at a second position of the circulation line, while supplying a purge gas to the circulation line at a first position of the circulation line, wherein the first position is located upstream of a junction area where the branch line is connected to the circulation line, and the second position is located downstream of the junction area and upstream of the storage tank; and supplying a process liquid into the storage tank.

Abstract: To provide a billing method for use of a water purification system that gives incentives for using the water purification system. Such a water purification system is equipped with water purification apparatus having controller and with monitoring server connected to water purification apparatus via public network and having controller. Filtration filter of water purification apparatus has water quality sensor, which measures water quality data of inflow water, and water quality sensor, which measures water quality data of purified water. Water quality data measured by water quality sensors are transmitted to controller and controller. Usage fees for the water purification system are calculated corresponding to improvement rates of water quality, which are calculated based on water quality data of inflow water and water quality data of purified water.

Abstract: A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: Disclosed is a metal paste filling apparatus that fills the metal paste in a non-through hole of a substrate conveniently and efficiently without producing a void. The metal paste filling apparatus includes a pad, an exhaust unit, a metal paste supply unit, and a controller. One or more exhaust ports and one or more inlet ports are formed in the acting surface of the pad. The exhaust unit includes a vacuum apparatus connected to a gas flow path in the pad through an exhaust tube, and a direction switching valve installed in the way of the exhaust tube. The metal paste supply unit includes a syringe unit connected to a paste flow path in the pad. The syringe unit includes a paste container, a compressed air supply source, a suck-back valve, and a regulator.

Abstract: A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.

Abstract: A method for purging a substrate container which accommodates in multiple stages a plurality of substrates to be processed by a substrate processing apparatus, the method includes: mounting the substrate container on a mounting unit; connecting a gas supply port provided in the substrate container and a gas supply line provided in a mounting unit; starting supply of a dry gas into the substrate container from a gas supply line before opening a cover of the substrate container; opening the cover of the substrate container while keeping the supply of the dry gas; closing the cover of the substrate container upon completion of processing of the substrates in the substrate container; and stopping the supply of the dry gas after closing the cover of the substrate container.

Abstract: A removal target can be effectively removed from a substrate. In a substrate processing apparatus 1 and a substrate processing method by using a substrate processing scrubber 29 of removing the removal target from the substrate 5, the substrate processing scrubber 29 includes a base 31 connected to a rotation shaft 28; scrubber main bodies 32 provided at the base 31 and arranged at a regular distance in a rotational direction of the base 31; and a processing liquid supply opening 36 formed at the base 31 and configured to supply a processing liquid to the scrubber main bodies 32. Further, an area of an attachment surface of each of the scrubber main bodies 32 to be attached to the base 31 is larger than an area of a contact surface of each of the scrubber main bodies 32 to be brought into contact with the substrate 5.

Abstract: A technique which, when transporting a substrate from one module to another, detects a displacement of the substrate on a holding member and transfers the substrate to another module with the displacement within an acceptable range. Displacement of a wafer on a fork of a transport arm from a reference position is determined when the fork has received the wafer from one module and, when the displacement is within an acceptable range, the wafer is transported by the transport arm to another module. When the displacement is out of the acceptable range, the wafer is transported by the transport arm to a wafer stage module, and then the transport arm receives the wafer from the wafer stage module so that the displacement comes to fall within the acceptable range. The wafer can therefore be transferred to another module with the displacement within the acceptable range.

Abstract: Provided is a gas supply apparatus having a source gas supply system configured to supply a source gas to a processing container using a carrier gas, wherein the source gas is generated from a liquid raw material consisting of an organic metal material. The gas supply apparatus includes a raw material storage tank configured to store the liquid raw material therein; a gas supply portion installed to the raw material storage tank and connected to a carrier gas passage, wherein the carrier gas passage allows the carrier gas to flow; a gas outflow portion installed to the raw material storage tank and connected to a source gas passage, wherein the source gas passage allows the source gas to flow; and a baffle plate configured to prevent the carrier gas injected from the gas supply portion from being brought into direct contact with a liquid surface of the raw material.

Abstract: A plasma processing apparatus comprises an upper electrode 42, a lower electrode, a grounding member 61 provided above the upper electrode 42 via an insulating member 60; and a DC power supply for applying a DC voltage to the upper electrode 42. Gas diffusion rooms 54 and 55 communicating with a gas supply opening 53 formed at a lower surface of the upper electrode 42 are formed in the upper electrode 42 and a gas flow path 62 communicating with the gas diffusion rooms 54 and 55 is formed in the insulating member 60. A bent portion 63 for allowing a gas within the gas flow path to flow in a direction having at least a horizontal component is formed at the gas flow path 62 such that an end of the gas flow path 62 cannot be seen from the other end thereof when viewed from the top.

Abstract: A film deposition apparatus includes a first plasma processing unit which performs a plasma process to a substrate at a second process area wherein the first plasma processing unit includes a first surrounding portion for forming a plasma generation space where plasma is generated, provided with a discharge port at a lower end portion, a second process gas supplying unit which supplies a second process gas to a plasma generation space, an activating unit which activates the second process gas in the plasma generation space, and a second surrounding portion provided below the first surrounding portion for forming a guide space which extends from a center portion side to an outer periphery portion side of the turntable so that the plasma discharged from the discharge port is guided to the surface of the turntable.