Abstract: A solvent such as PGMEA is coated on a wafer in advance to easily spread resist liquid onto the wafer on a spin chuck. Before coating, the solvent supplied from a solvent supply source is stored in a distill tank first, the solvent is heated by a heating unit to be evaporated, and the evaporated solvent is cooled by a cooler, thereby performing the purification of the solvent by distillation. Therefore, particles among the solvent are removed. The purified solvent is stored in a storage tank first, and then supplied to a solvent nozzle above the spin chuck from a solvent supplying line. And then, the solvent is coated on the wafer by ejecting the solvent from the solvent nozzle to the wafer. Further, the distill tank is cleaned periodically to suppress the increase of the concentration of the particles in the solvent.

Abstract: A processing apparatus includes a processing chamber, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths. The apparatus further includes a measuring unit for measuring a physical parameter associated with each of the process gases passing through the gas supply paths, a register unit which stores the physical parameter, and a control unit configured to determine a process status based on the physical parameter stored in the register unit. The register unit is provided in a lower-hierarchy control device connected to the control unit of a higher hierarchy to transmit and receive signals to and from the control unit. The lower-hierarchy control device is configured to control input and output signals between the control unit and end devices under the control of the control unit.

Abstract: The present invention provides a resist coating and developing apparatus, a resist coating and developing method, a resist-film processing apparatus, and a resist-film processing method, capable of reducing a line width roughness by planarizing a resist pattern. The resist coating and developing apparatus comprises: a resist-film forming part configured to coat a resist onto a substrate to form a resist film thereon; a resist developing part configured to develop the exposed resist film to obtain a patterned resist film; and a solvent-gas supply part configured to expose the resist film, which has been developed and patterned by the resist developing part, to a first solvent of a gaseous atmosphere having a solubility to the resist film. A solvent supply part supplies, to the resist film which has been exposed to the first solvent, a second solvent in a liquid state having a solubility to the resist film.

Abstract: A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields.

Abstract: The heat treatment apparatus includes: a processing chamber which accommodates a processing object; a heating unit which heats the processing object accommodated in the processing chamber; a temperature detecting unit which detects an internal temperature of the processing chamber; and a controller which sets a second setting temperature identical to as a temperature detected by the temperature detecting unit when the temperature detected by the temperature detecting unit falls below a predetermined first setting temperature due to an external disturbance; controls the heating unit so that a third setting temperature between the second setting temperature and the first setting temperature becomes identical to the temperature detected by the temperature detecting unit; and controls the heating unit so that the first setting temperature becomes identical to the temperature detected by the temperature detecting unit after the third setting temperature becomes identical to the temperature detected by the temperat

Abstract: Provided is a semiconductor device manufacturing system according to the present disclosure which manufactures a semiconductor device using a chip stack. The system includes a chip reducing apparatus and a chip bonding apparatus, the chip reducing apparatus includes a reduction chamber, an oxide film of the surface of the terminal of each chip is reduced in the reduction chamber, the chip bonding apparatus includes a reflow chamber isolated from the reduction chamber, a solder ball is bonded to the terminal of each chip in the reflow chamber, and the chip bonding apparatus is installed separately from the chip reducing apparatus.

Abstract: The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.

Abstract: A film deposition apparatus deposits a thin film on a substrate by repeating a cycle of supplying plural kinds of process gases that react with each other in a vacuum chamber. The film deposition apparatus includes a turntable to hold a substrate thereon and to rotate the substrate, and a plurality of process gas supplying parts. At least one of the process gas supplying parts extends from the center to the periphery and is formed as a gas nozzle including gas discharge holes. The gas discharge holes are formed along a length direction of the gas nozzle. The film deposition apparatus also includes current plates provided on upstream and downstream sides in a rotational direction of the turntable and extending along the length direction of the gas nozzle, and having at least one bent section bent downward from an outer edge of the current plates.

Abstract: A processing apparatus includes a processing chamber configured to accommodate a target object to be processed, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths to open and close the gas supply paths. The processing apparatus further includes valve drive units configured to independently drive the valves, sensor units configured to independently monitor opening and closing operations of the valves, and a control unit configured to determine operation statuses of the valves based on valve opening and closing drive signals transmitted to the valve drive units and/or valve opening and closing detection signals transmitted from the sensor units.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A substrate cleaning method is capable of preventing a liquid stream on a substrate from being cut and circuit patterns thereon from being damaged. The substrate cleaning method includes a liquid film forming process that forms a liquid film on an entire substrate surface by supplying a cleaning liquid L from a central portion of the substrate W toward a peripheral portion thereof while rotating the substrate; a drying region forming process that discharges a gas G on the substrate surface and removes the cleaning liquid on the substrate surface; and a residual liquid removing process that removes the cleaning liquid remaining between the circuit patterns by discharging a gas G while moving in a diametrical direction of the substrate.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

Abstract: There is provided a substrate processing apparatus to perform a predetermined process on a substrate on which a pattern mask is formed, comprising a compartment mechanism configured to switch between a compartmented state and an open state. The compartmented state includes a first section having the evaporation source formation part, and a second section configured to transfer the substrate between an outside of processing vessel and a mounting table. The substrate processing apparatus comprises a substrate transfer hole formed in the processing vessel and configured to open and close with respect to the second section being in the compartmented state; and an exhaust hole formed to connect to the second section and configured to exhaust the second section in the compartment state to remove a solvent atmosphere of the second section.

Abstract: In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof.

Abstract: Four microwave introduction ports are arranged to deviate from directly above a wafer in such a way that the long sides thereof are in parallel to at least one of the four straight sides. The top surface of a rectifying plate which surrounds the wafer is inclined so as to be widened from the side of the wafer (inner side) toward the side of a sidewall portion (outer side) to form an inclined portion. The inclined portion is disposed to face the four microwave introduction ports in a vertical direction.

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Abstract: A film deposition method includes an adsorption step of adsorbing a first reaction gas onto a substrate by supplying the first reaction gas from a first gas supplying portion for a predetermined period without supplying a reaction gas from a second gas supplying portion while separating a first process area and a second process area by supplying a separation gas from a separation gas supplying portion and rotating a turntable; and a reaction step of having the first reaction gas adsorbed onto the substrate react with a second reaction gas by supplying the second reaction gas from the second gas supplying portion for a predetermined period without supplying a reaction gas from the first gas supplying portion while separating the first process area and the second process area by supplying the separation gas from the separation gas supplying portion and rotating the turntable.

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract: A film deposition method includes a film depositing step of depositing titanium nitride on a substrate mounted on a substrate mounting portion of a turntable, which is rotatably provided in a vacuum chamber, by alternately exposing the substrate to a titanium containing gas and a nitrogen containing gas which is capable of reacting with the titanium containing gas while rotating the turntable; and an exposing step of exposing the substrate on which the titanium nitride is deposited to the nitrogen containing gas, the film depositing step and the exposing step being continuously repeated to deposit the titanium nitride of a desired thickness.