Patents by Inventor Tom Kamp
Tom Kamp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190043728Abstract: A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.Type: ApplicationFiled: August 4, 2017Publication date: February 7, 2019Inventors: Xiang Zhou, Tom A. Kamp, Yoshie Kimura, Duming Zhang, Chen Xu, John Drewery, Alex Paterson
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Patent number: 10163610Abstract: An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.Type: GrantFiled: March 10, 2016Date of Patent: December 25, 2018Assignee: Lam Research CorporationInventors: Saravanapriyan Sriraman, Tom A. Kamp, Alexander Paterson
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Publication number: 20180308693Abstract: A method for processing a stack with a carbon based patterned mask is provided. The stack is placed in an etch chamber. A silicon oxide layer is deposited by atomic layer deposition over the carbon based patterned mask by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises providing a silicon precursor deposition phase, comprising flowing an atomic layer deposition precursor gas into the etch chamber, where the atomic layer deposition precursor gas is deposited while plasmaless and stopping the flow of the atomic layer deposition precursor gas and providing an oxygen deposition phase, comprising flowing ozone gas into the etch chamber, wherein the ozone gas binds with the deposited precursor gas while plasmaless and stopping the flow of ozone gas into the etch chamber. Part of the silicon oxide layer is etched. The stack is removed from the etch chamber.Type: ApplicationFiled: April 20, 2017Publication date: October 25, 2018Inventors: Tom A. KAMP, Mirzafer K. ABATCHEV
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Patent number: 9711359Abstract: A method for etching an etch layer in a stack over a substrate wherein the etch layer is under a mask layer which is under a patterned organic mask is provided. The stack and substrate is placed on a support in the plasma chamber. A silicon based layer is deposited in situ over the stack. The silicon based layer is etched to form silicon based sidewalls or spacers on sides of the patterned organic mask. The mask layer is selectively etched with respect to the silicon based sidewalls or spacers, wherein the selectively etching the mask layer undercuts the silicon based sidewalls or spacers. The etch layer is selectively etched with respect to the mask layer. The stack and substrate are removed from the support and the plasma chamber.Type: GrantFiled: August 13, 2015Date of Patent: July 18, 2017Assignee: Lam Research CorporationInventors: Tom A. Kamp, Rodolfo P. Belen, Jr.
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Publication number: 20170178917Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.Type: ApplicationFiled: March 1, 2017Publication date: June 22, 2017Applicant: Lam Research CorporationInventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon
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Patent number: 9620376Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.Type: GrantFiled: August 19, 2015Date of Patent: April 11, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon
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Publication number: 20170053808Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.Type: ApplicationFiled: August 19, 2015Publication date: February 23, 2017Inventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon
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Publication number: 20170047224Abstract: A method for etching an etch layer in a stack over a substrate wherein the etch layer is under a mask layer which is under a patterned organic mask is provided. The stack and substrate is placed on a support in the plasma chamber. A silicon based layer is deposited in situ over the stack. The silicon based layer is etched to form silicon based sidewalls or spacers on sides of the patterned organic mask. The mask layer is selectively etched with respect to the silicon based sidewalls or spacers, wherein the selectively etching the mask layer undercuts the silicon based sidewalls or spacers. The etch layer is selectively etched with respect to the mask layer. The stack and substrate are removed from the support and the plasma chamber.Type: ApplicationFiled: August 13, 2015Publication date: February 16, 2017Inventors: Tom A. Kamp, Rodolfo P. Belen, JR.
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Publication number: 20170032931Abstract: A gas plenum arrangement for a substrate processing system includes a gas plenum body arranged to define a gas plenum between a coil and a processing chamber. The coil is arranged outside of an outer edge of the gas plenum body. A plurality of flux attenuating portions is arranged outside of the outer edge of the gas plenum body. The flux attenuation portions overlap the coil.Type: ApplicationFiled: October 12, 2016Publication date: February 2, 2017Inventors: Tom KAMP, Arthur H. SATO, Alex PATERSON
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Publication number: 20170018411Abstract: An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.Type: ApplicationFiled: March 10, 2016Publication date: January 19, 2017Inventors: Saravanapriyan Sriraman, Tom A. Kamp, Alexander Paterson
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Patent number: 9484214Abstract: A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one.Type: GrantFiled: June 2, 2014Date of Patent: November 1, 2016Assignee: LAM RESEARCH CORPORATIONInventors: Tom Kamp, Arthur Sato, Alex Paterson
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Patent number: 9396961Abstract: The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes.Type: GrantFiled: February 2, 2015Date of Patent: July 19, 2016Assignee: Lam Research CorporationInventors: Reza Arghavani, Shashank C. Deshmukh, Eric A. Hudson, Tom Kamp, Samantha Tan, Gerardo Adrian Delgadino
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Publication number: 20160181111Abstract: A method for etching features into a silicon containing etch layer is provided. The etch layer is placed into a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into an etch plasma, wherein the etch plasma etches features into the silicon containing layer leaving silicon containing residue. The flow of etch gas into the plasma processing chamber is stopped. A dry clean gas is flowed into the plasma processing chamber, wherein the dry clean gas comprises NH3 and NF3. The dry clean gas is formed into a plasma, wherein the silicon containing residue is exposed to the dry clean gas plasma, and wherein at least some or all of the silicon containing residue is formed into ammonium containing compounds. The flow of the dry clean gas is stopped. The ammonium compounds are sublimated from the films.Type: ApplicationFiled: December 19, 2014Publication date: June 23, 2016Inventors: Tom A. Kamp, Alexander M. Paterson, Neema Rastgar
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Publication number: 20160181117Abstract: The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes.Type: ApplicationFiled: February 2, 2015Publication date: June 23, 2016Inventors: Reza Arghavani, Shashank C. Deshmukh, Eric A. Hudson, Tom Kamp, Samantha Tan, Gerardo Adrian Delgadino
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Publication number: 20150235808Abstract: A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one.Type: ApplicationFiled: June 2, 2014Publication date: August 20, 2015Applicant: Lam Research CorporationInventors: Tom Kamp, Arthur Sato, Alex Paterson
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Patent number: 9012243Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system. The controller also receives critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data of the at least one previously processed wafers and the critical device parameters of the current wafer.Type: GrantFiled: August 27, 2014Date of Patent: April 21, 2015Assignee: Lam Research CorporationInventors: Yoshie Kimura, Tom Kamp, Eric Pape, Rohit DeshPande, Keith Gaff, Gowri Kamarthy
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Publication number: 20150053347Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system. The controller also receives critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data of the at least one previously processed wafers and the critical device parameters of the current wafer.Type: ApplicationFiled: August 27, 2014Publication date: February 26, 2015Inventors: Yoshie Kimura, Tom Kamp, Eric Pape, Rohit DeshPande, Keith Gaff, Gowri Kamarthy
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Patent number: 8901004Abstract: A method of producing plurality of etched features in an electronic device is disclosed that avoids micro-loading problems thus maintaining more uniform sidewall profiles and more uniform critical dimensions. The method comprises performing a first time-divisional plasma etch process step within a plasma chamber to a first depth of the plurality of etched features, and performing a flash process step to remove any polymers from exposed surfaces of the plurality of etched features without requiring an oxidation step. The flash process step is performed independently of the time-divisional plasma etch step. A second time-divisional plasma etch process step is performed within the plasma chamber to a second depth of the plurality of etched features. The method may be repeated until a desired etch depth is reached.Type: GrantFiled: July 20, 2010Date of Patent: December 2, 2014Assignee: Lam Research CorporationInventors: Tom Kamp, Qian Fu, I. C. Jang, Linda Braly, Shenjian Liu
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Patent number: 8852964Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system, and critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data, and the critical device parameters. The current wafer is trimmed during the target trim time while the temperature of each device die location is controlled based on the target temperature profile.Type: GrantFiled: February 4, 2013Date of Patent: October 7, 2014Assignee: Lam Research CorporationInventors: Yoshie Kimura, Tom Kamp, Eric Pape, Rohit DeshPande, Keith Gaff, Gowri Kamarthy
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Publication number: 20140220709Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system, and critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data, and the critical device parameters. The current wafer is trimmed during the target trim time while the temperature of each device die location is controlled based on the target temperature profile.Type: ApplicationFiled: February 4, 2013Publication date: August 7, 2014Applicant: LAM RESEARCH CORPORATIONInventors: Yoshie Kimura, Tom Kamp, Eric Pape, Rohit DeshPande, Keith Gaff, Gowri Kamarthy