Abstract: A hybrid sensor includes a piezoresistive element for sensing an applied force, a piezoelectric micromachined ultrasonic transducer (PMUT) for sensing the presence of an object within a threshold distance of the hybrid sensor, and a substrate onto which both the piezoresistive element and the PMUT are disposed.

Abstract: Methods of manufacturing a pressure sensor from an SOI wafer are provided. In preferred embodiments, the methods comprise forming a cavity in a SOI wafer by removing a first portion of a bottom silicon layer on the bottom side of the SOI wafer to a depth of an insulator layer; depositing a layer of a second material over the cavity; removing both the silicon layer and the insulator layer from a top side of the SOI wafer in a first plurality of areas above the cavity to form a diaphragm from the layer of a second material, wherein at least one support structure that spans the diaphragm is formed from material above the cavity that was not removed; and forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.

Abstract: Methods of manufacturing a pressure sensor from an SOI wafer are provided. In preferred embodiments, the methods comprise forming a cavity in a SOI wafer by removing a first portion of a bottom silicon layer on the bottom side of the SOI wafer to a depth of an insulator layer; depositing a layer of a second material over the cavity; removing both the silicon layer and the insulator layer from a top side of the SOI wafer in a first plurality of areas above the cavity to form a diaphragm from the layer of a second material, wherein at least one support structure that spans the diaphragm is formed from material above the cavity that was not removed; and forming at least one piezoresistor in the SOI wafer over an intersection of the support structure and SOI wafer at an outside edge of the diaphragm.

Abstract: Methods of manufacturing a pressure sensor are provided. In preferred embodiments, the method comprises: forming a cavity in a first side of a silicon starting material; depositing a layer of a second material over the cavity; removing a first portion of material above the cavity from a second side of the silicon starting material to expose the second material to the second side to form a diaphragm from the second material and wherein, a second portion of material above the cavity that was not removed from the silicon starting material, forms at least one support structure that spans the diaphragm, wherein the second side is opposite to the first side; and forming at least one piezoresistor in the silicon starting material over an intersection of the support structure and the silicon starting material at an outside edge of the diaphragm on the second side.

Abstract: Systems and methods for packaging a MEMS device to measure the in-stream pressure within a pipe are provided. Embodiments herein avoid the use of a metal housing enclosing the MEMS device or die pad of the MEMS device. Instead, the MEMS device is mounted directly to the pipe using a ceramic carrier. In preferred embodiments, the ceramic carrier is soldered, brazed, welded or eutectic bonded to the metal pipe.

Abstract: A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

Abstract: Systems and methods for packaging a MEMS device to measure the in-stream pressure within a pipe are provided. Embodiments herein avoid the use of a metal housing enclosing the MEMS device or die pad of the MEMS device. Instead, the MEMS device is mounted directly to the pipe using a ceramic carrier. In preferred embodiments, the ceramic carrier is soldered, brazed, welded or eutectic bonded to the metal pipe.

Abstract: A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

Abstract: A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.

Abstract: A MEMS acceleration sensor comprising: a frame, a plurality of proofmasses; a plurality of flexures; a plurality of hinges and a plurality of gauges. The frame, proofmasses, flexures, hinges and gauges designed to measure acceleration in a direction perpendicular to the device plane while being generally resistant to motions parallel to the device plane. The measurement of the acceleration is accomplished through the piezoresistive effect of the strain in the gauges.

Abstract: A pressure sensitive element is provided. In one embodiment the pressure sensitive element comprises: a diaphragm with a gage side and a back side and a rim surrounding the diaphragm; a pair of inner islands on the gage side of the diaphragm wherein the pair of inner islands are spaced to form a first gap between the pair of inner islands; a first freed gage spanning the first gap; at least one bridge to provide an electrical communication path between the rim and the first freed gage; an outer island on the gage side of the diaphragm wherein the outer island and the rim are spaced to form a second gap; and a second freed gage spanning the second gap.

Abstract: A MEMS acceleration sensor is provided.

Abstract: Systems and methods for controlling the temperature and humidity in a plurality of spaces are provided. The systems may receive inputs from a temperature sensor, a humidity sensor, an occupancy sensor, a door sensor, and a window sensor. The systems may determine a first space is occupied and a second space is unoccupied. If the occupied space has both doors and windows closed the system may direct motorized vents to shift air flow from an evaporator, burner and humidifier towards the occupied area and away from the unoccupied area.

Abstract: A pressure sensor assembly comprising: three stacked silicon wafers which form a support, a sensor and a cover wherein the sensor includes a cavity extending from the bottom of the sensor up towards the top of the sensor to form a cavity bottom and a diaphragm; a dielectric layer covering the bottom of the sensor and the cavity and wherein the support is coupled to the dielectric layer along the bottom of the sensor; a plurality of ports located on a top of the support within an area defined by the cavity, the plurality of ports extending through the support to its bottom and wherein the cover is coupled to the top of the sensor covering the diaphragm; and, a second cavity cut into a bottom of the cover wherein the second cavity is sized and positioned to surround the diaphragm.

Abstract: A pressure sensor assembly comprising: three stacked silicon wafers which form a support, a sensor and a cover wherein the sensor includes a cavity extending from the bottom of the sensor up towards the top of the sensor to form a cavity bottom and a diaphragm; a dielectric layer covering the bottom of the sensor and the cavity and wherein the support is coupled to the dielectric layer along the bottom of the sensor; a plurality of ports located on a top of the support within an area defined by the cavity, the plurality of ports extending through the support to its bottom and wherein the cover is coupled to the top of the sensor covering the diaphragm; and, a second cavity cut into a bottom of the cover wherein the second cavity is sized and positioned to surround the diaphragm.

Abstract: A motion-sensitive low-G MEMS acceleration switch, which is a MEMS switch that closes at low-g acceleration (e.g., sensitive to no more than 10 Gs), is proposed. Specifically, the low-G MEMS acceleration switch has a base, a sensor wafer with one or more proofmasses, an open circuit that includes two fixed electrodes, and a contact plate. During acceleration, one or more of the proofmasses move towards the base and connects the two fixed electrodes together, resulting in a closing of the circuit that detects the acceleration. Sensitivity to low-G acceleration is achieved by proper dimensioning of the proofmasses and one or more springs used to support the proofmasses in the switch.

Abstract: A MEMS acceleration sensor comprising: a frame, a plurality of proofmasses; a plurality of flexures; a plurality of hinges and a plurality of gauges. The frame, proofmasses, flexures, hinges and gauges designed to measure acceleration in a direction perpendicular to the device plane while being generally resistant to motions parallel to the device plane. The measurement of the acceleration is accomplished through the piezoresistive effect of the strain in the gauges.

Abstract: A pressure sensor assembly comprising: three stacked silicon wafers which form a support, a sensor and a cover wherein the sensor includes a cavity extending from the bottom of the sensor up towards the top of the sensor to form a cavity bottom and a diaphragm; a dielectric layer covering the bottom of the sensor and the cavity and wherein the support is coupled to the dielectric layer along the bottom of the sensor; a plurality of ports located on a top of the support within an area defined by the cavity, the plurality of ports extending through the support to its bottom and wherein the cover is coupled to the top of the sensor covering the diaphragm; and, a second cavity cut into a bottom of the cover wherein the second cavity is sized and positioned to surround the diaphragm.

Abstract: A MEMS acceleration sensor is provided.

Abstract: A pressure sensitive element is provided. In one embodiment the pressure sensitive element comprises: a diaphragm with a gage side and a back side and a rim surrounding the diaphragm; a pair of inner islands on the gage side of the diaphragm wherein the pair of inner islands are spaced to form a first gap between the pair of inner islands; a first freed gage spanning the first gap; at least one bridge to provide an electrical communication path between the rim and the first freed gage; an outer island on the gage side of the diaphragm wherein the outer island and the rim are spaced to form a second gap; and a second freed gage spanning the second gap.