Abstract: A motion-sensitive low-G MEMS acceleration switch, which is a MEMS switch that closes at low-g acceleration (e.g., sensitive to no more than 10 Gs), is proposed. Specifically, the low-G MEMS acceleration switch has a base, a sensor wafer with one or more proofmasses, an open circuit that includes two fixed electrodes, and a contact plate. During acceleration, one or more of the proofmasses move towards the base and connects the two fixed electrodes together, resulting in a closing of the circuit that detects the acceleration. Sensitivity to low-G acceleration is achieved by proper dimensioning of the proofmasses and one or more springs used to support the proofmasses in the switch.

Abstract: A motion-sensitive low-G MEMS acceleration switch, which is a MEMS switch that closes at low-g acceleration (e.g., sensitive to no more than 10 Gs), is proposed. Specifically, the low-G MEMS acceleration switch has a base, a sensor wafer with one or more proofmasses, an open circuit that includes two fixed electrodes, and a contact plate. During acceleration, one or more of the proofmasses move towards the base and connects the two fixed electrodes together, resulting in a closing of the circuit that detects the acceleration. Sensitivity to low-G acceleration is achieved by proper dimensioning of the proofmasses and one or more springs used to support the proofmasses in the switch.

Abstract: A piezoresistive sensor assembly is provided that has a flex circuit having at least one air flow aperture formed therein. A sensor die is coupled to an absolute support and the flex circuit. The sensor die has a diaphragm that deflects in response to air flow that flows through the air flow aperture and is incident on the diaphragm. The sensor die includes one or more gages positioned on or in the diaphragm.

Abstract: An electronic apparatus is provided that has a core, an electronic circuit in the core and a lid. An ESD protection device is in the lid. The ESD protection device is coupled to the electronic circuit.

Abstract: A new high G-range damped acceleration sensor is proposed with a proof mass optimized for maximized, bi-directional and symmetrical damping to accommodate acceleration ranges above and beyond several thousand G's. In order to achieve the maximum, bi-directional and symmetrical damping, the high G-range acceleration sensor is designed to have minimum amount of mass in the proof mass while maximizing its surface areas. Such high G-range damped acceleration sensor can be applied to any application in which damping (or suppression of ringing) is desired at quite high frequencies.

Abstract: A motion-sensitive low-G MEMS acceleration switch, which is a MEMS switch that closes at low-g acceleration (e.g., sensitive to no more than 10 Gs), is proposed. Specifically, the low-G MEMS acceleration switch has a base, a sensor wafer with one or more proofmasses, an open circuit that includes two fixed electrodes, and a contact plate. During acceleration, one or more of the proofmasses move towards the base and connects the two fixed electrodes together, resulting in a closing of the circuit that detects the acceleration. Sensitivity to low-G acceleration is achieved by proper dimensioning of the proofmasses and one or more springs used to support the proofmasses in the switch.

Abstract: A piezoresistive sensor assembly is provided that has a flex circuit having at least one air flow aperture formed therein. A sensor die is coupled to an absolute support and the flex circuit. The sensor die has a diaphragm that deflects in response to air flow that flows through the air flow aperture and is incident on the diaphragm. The sensor die includes one or more gages positioned on or in the diaphragm.

Abstract: An electronic apparatus is provided that has a core, an electronic circuit in the core and a lid. An ESD protection device is in the lid. The ESD protection device is coupled to the electronic circuit.

Abstract: A new high G-range damped acceleration sensor is proposed with a proof mass optimized for maximized, bi-directional and symmetrical damping to accommodate acceleration ranges above and beyond several thousand G's. In order to achieve the maximum, bi-directional and symmetrical damping, the high G-range acceleration sensor is designed to have minimum amount of mass in the proof mass while maximizing its surface areas. Such high G-range damped acceleration sensor can be applied to any application in which damping (or suppression of ringing) is desired at quite high frequencies.

Abstract: A multi-layer device is provided for connecting to an electrical unit enclosed within the multi-layer device. A first wafer has a first outer terminal and a second outer terminal with etch pits. A first insulator has a first surface bonded to the first wafer and a first inner terminal located on an opposing second surface. A second wafer has a first surface bonded to the second surface of the first insulating layer and includes a pillar electrically connected to the first wafer. A second insulator has a first surface bonded to a second surface of the second wafer and a second inner terminal located on the first surface of the second insulator. The first outer terminal is electrically connected to the first inner terminal, and the second outer terminal is electrically connected to the second inner terminal. The first and second outer terminals are adapted for connecting to an electrical unit.

Abstract: A multi-layer device is provided for connecting to an electrical unit enclosed within the multi-layer device. A first wafer has a first outer terminal and a second outer terminal with etch pits. A first insulator has a first surface bonded to the first wafer and a first inner terminal located on an opposing second surface. A second wafer has a first surface bonded to the second surface of the first insulating layer and includes a pillar electrically connected to the first wafer. A second insulator has a first surface bonded to a second surface of the second wafer and a second inner terminal located on the first surface of the second insulator. The first outer terminal is electrically connected to the first inner terminal, and the second outer terminal is electrically connected to the second inner terminal. The first and second outer terminals are adapted for connecting to an electrical unit.

Abstract: The micro-electromechanical hinged flap system includes a substantially horizontal substrate and a main flap hinged on one side thereof to the substrate. The system also includes at least one locking flap, preferably two, for securing the main flap in a substantially vertical position. The locking flap is coupled to the substrate by means of a biasing mechanism that continually forces the locking flap toward a position parallel to the substrate. Also provided is a method for assembling a micro-electromechanical hinged flap system. A locking flap is rotated through an acute angle against a biasing force. The biasing force is caused by a biasing mechanism coupling the locking flap to a substrate. A main flap is then raised, whereafter the locking flap is released, such that the biasing force causes the locking flap to engage with the main flap, thereby, securing the main flap in position at the predetermined angle.

Abstract: The micro-electromechanical hinged flap system includes a substantially horizontal substrate and a main flap hinged on one side thereof to the substrate. The system also includes at least one locking flap, preferably two, for securing the main flap in a substantially vertical position. The locking flap is coupled to the substrate by means of a biasing mechanism that continually forces the locking flap toward a position parallel to the substrate. Also provided is a method for assembling a micro-electromechanical hinged flap system. A locking flap is rotated through an acute angle against a biasing force. The biasing force is caused by a biasing mechanism coupling the locking flap to a substrate. A main flap is then raised, whereafter the locking flap is released, such that the biasing force causes the locking flap to engage with the main flap, thereby, securing the main flap in position at the predetermined angle.