Patents by Inventor Tomihiro Hashizume

Tomihiro Hashizume has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240126061
    Abstract: To provide a scanning probe microscope capable of easily determining a measurement location even when a numerical aperture of an objective lens is relatively large. The scanning probe microscope comprises: a probe which scans a sample; a light source which irradiates the probe with excitation light via an objective lens; and a detector which detects fluorescence generated at the probe. The scanning probe microscope further includes: a reflective member arranged between the objective lens and the sample; and an imaging device which images a reflecting surface of the reflective member.
    Type: Application
    Filed: October 16, 2023
    Publication date: April 18, 2024
    Inventors: Masanari Koguchi, Teruo Kohashi, Tomihiro Hashizume
  • Publication number: 20230317401
    Abstract: The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a <100> axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.
    Type: Application
    Filed: September 23, 2020
    Publication date: October 5, 2023
    Inventors: Toshiaki KUSUNOKI, Noriaki ARAI, Tomihiro HASHIZUME, Keigo KASUYA
  • Publication number: 20220415603
    Abstract: In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.
    Type: Application
    Filed: December 24, 2019
    Publication date: December 29, 2022
    Inventors: Toshiaki KUSUNOKI, Tomihiro HASHIZUME, Noriaki ARAI, Keigo KASUYA
  • Patent number: 11322329
    Abstract: The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: May 3, 2022
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Toshiaki Kusunoki, Tomihiro Hashizume, Keigo Kasuya, Noriaki Arai, Hiromitsu Seino, Minoru Kaneda, Takashi Ohshima, Soichiro Matsunaga
  • Publication number: 20210327674
    Abstract: The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.
    Type: Application
    Filed: August 27, 2018
    Publication date: October 21, 2021
    Inventors: Toshiaki KUSUNOKI, Tomihiro HASHIZUME, Keigo KASUYA, Noriaki ARAI, Hiromitsu SEINO, Minoru KANEDA, Takashi OHSHIMA, Soichiro MATSUNAGA
  • Patent number: 11143606
    Abstract: To enable evaluation of a shape of a fine particle and a fine particle type, a substrate is set as a substrate on which an isolated fine particle to be measured and an isolated standard fine particle in the vicinity of the isolated fine particle to be measured are disposed, and a scanning electron microscope body including a detector configured to detect secondary charged particles obtained by scanning a surface of the substrate with an electron beam probe, and a computer that processes a detection signal and generates an image of the isolated fine particle to be measured and the isolated standard fine particle are provided. The computer corrects a shape of the isolated fine particle to be measured by using a measurement result of the isolated standard fine particle disposed in the vicinity of the isolated fine particle to be measured.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: October 12, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Tomihiro Hashizume, Masatoshi Yasutake, Tsunenori Nomaguchi, Takafumi Miwa
  • Patent number: 10971329
    Abstract: An H3+ ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H3+ ion can be obtained by use of a probe current within a voltage range 21 around a second peak 23 occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: April 6, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Shinichi Matsubara, Hiroyasu Shichi, Tomihiro Hashizume, Yoshimi Kawanami
  • Publication number: 20200371050
    Abstract: To enable evaluation of a shape of a fine particle and a fine particle type, a substrate is set as a substrate on which an isolated fine particle to be measured and an isolated standard fine particle in the vicinity of the isolated fine particle to be measured are disposed, and a scanning electron microscope body including a detector configured to detect secondary charged particles obtained by scanning a surface of the substrate with an electron beam probe, and a computer that processes a detection signal and generates an image of the isolated fine particle to be measured and the isolated standard fine particle are provided. The computer corrects a shape of the isolated fine particle to be measured by using a measurement result of the isolated standard fine particle disposed in the vicinity of the isolated fine particle to be measured.
    Type: Application
    Filed: February 1, 2018
    Publication date: November 26, 2020
    Inventors: Tomihiro Hashizume, Masatoshi Yasutake, Tsunenori Nomaguchi, Takafumi Miwa
  • Patent number: 10840070
    Abstract: An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: November 17, 2020
    Assignee: Hitachi High-Tech Corporation
    Inventors: Yoshimi Kawanami, Atsushi Kobaru, Tomihiro Hashizume, Hiroyasu Shichi, Shinichi Matsubara
  • Publication number: 20200294776
    Abstract: An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode.
    Type: Application
    Filed: August 20, 2015
    Publication date: September 17, 2020
    Inventors: Yoshimi KAWANAMI, Atsushi KOBARU, Tomihiro HASHIZUME, Hiroyasu SHICHI, Shinichi MATSUBARA
  • Patent number: 10707046
    Abstract: An electron source that can be used stably for a long time even when hexaboride is used, and an electron beam device using the electron source are provided. The invention is directed to an electron source which includes a filament made of a metal, a metal tube that is fixed to the filament and has a plurality of recesses disposed at least in two axial directions so as to surround a central axis at an outer periphery, and a columnar hexaboride tip that emits an electron, is disposed so as to protrude from the inside of the metal tube to a side opposite to the filament, and is in contact with a bottom of each of the plurality of recesses of the metal tube.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: July 7, 2020
    Assignee: Hitachi High-Tech Corporation
    Inventors: Toshiaki Kusunoki, Keigo Kasuya, Takashi Ohshima, Tomihiro Hashizume, Noriaki Arai, Yoichi Ose
  • Patent number: 10697767
    Abstract: To provide a sample for measuring particles enabling the three-dimensional particulate shape to be measured and the particulate species to be evaluated, the sample for measuring particles includes a substrate; isolated nanoparticles to be measured which are disposed on the substrate; and isolated standard nanoparticles which are disposed on the substrate in the vicinity of the isolated nanoparticles to be measured.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: June 30, 2020
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Tomihiro Hashizume, Masatoshi Yasutake, Sanato Nagata
  • Patent number: 10586674
    Abstract: In order to provide a stable hexaboride single-crystal field emission electron source capable of heat-flashing, this field emission electron source is provided with a metal filament, a metal tube joined thereto, a hexaboride tip that emits electrons, and graphite sheets that are independent of the metal tube and the hexaboride tip. The hexaboride tip is arranged so as not to be in structural contact with the metal tube due to the graphite sheets. The hexaboride tip, the graphite sheets, and the metal tube are configured so as to be mechanically and electrically in contact with one another.
    Type: Grant
    Filed: November 24, 2016
    Date of Patent: March 10, 2020
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Toshiaki Kusunoki, Tomihiro Hashizume, Keigo Kasuya, Takashi Ohshima, Yusuke Sakai, Yoichi Ose, Noriaki Arai
  • Patent number: 10522319
    Abstract: An electron beam apparatus which can stably achieve high spatial resolution also during low acceleration observation using CeB6 for the CFE electron source is provided. In an electron beam apparatus having a CFE electron source, the emitter of the electron beam of the CFE electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce, the hexaboride emits the electron beam from the {310} plane, and the number of the atoms of the lanthanoid metal on the {310} plane is larger than the number of boron molecules comprising six boron atoms on the {310} plane.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: December 31, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Keigo Kasuya, Noriaki Arai, Toshiaki Kusunoki, Takashi Ohshima, Tomihiro Hashizume, Yusuke Sakai
  • Publication number: 20190385809
    Abstract: An electron source that can be used stably for a long time even when hexaboride is used, and an electron beam device using the electron source are provided. The invention is directed to an electron source which includes a filament made of a metal, a metal tube that is fixed to the filament and has a plurality of recesses disposed at least in two axial directions so as to surround a central axis at an outer periphery, and a columnar hexaboride tip that emits an electron, is disposed so as to protrude from the inside of the metal tube to a side opposite to the filament, and is in contact with a bottom of each of the plurality of recesses of the metal tube.
    Type: Application
    Filed: December 8, 2017
    Publication date: December 19, 2019
    Inventors: Toshiaki KUSUNOKI, Keigo KASUYA, Takashi OHSHIMA, Tomihiro HASHIZUME, Noriaki ARAI, Yoichi OSE
  • Publication number: 20190237289
    Abstract: An electron beam apparatus which can stably achieve high spatial resolution also during low acceleration observation using CeB6 for the CFE electron source is provided. In an electron beam apparatus having a CFE electron source, the emitter of the electron beam of the CFE electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce, the hexaboride emits the electron beam from the {310} plane, and the number of the atoms of the lanthanoid metal on the {310} plane is larger than the number of boron molecules comprising six boron atoms on the {310} plane.
    Type: Application
    Filed: October 13, 2016
    Publication date: August 1, 2019
    Inventors: Keigo KASUYA, Noriaki ARAI, Toshiaki KUSUNOKI, Takashi OHSHIMA, Tomihiro HASHIZUME, Yusuke SAKAI
  • Publication number: 20190178640
    Abstract: To provide a sample for measuring particles enabling the three-dimensional particulate shape to be measured and the particulate species to be evaluated, the sample for measuring particles includes a substrate; isolated nanoparticles to be measured which are disposed on the substrate; and isolated standard nanoparticles which are disposed on the substrate in the vicinity of the isolated nanoparticles to be measured.
    Type: Application
    Filed: August 31, 2016
    Publication date: June 13, 2019
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Tomihiro HASHIZUME, Masatoshi YASUTAKE, Sanato NAGATA
  • Publication number: 20190066966
    Abstract: In order to provide a stable hexaboride single-crystal field emission electron source capable of heat-flashing, this field emission electron source is provided with a metal filament, a metal tube joined thereto, a hexaboride tip that emits electrons, and graphite sheets that are independent of the metal tube and the hexaboride tip. The hexaboride tip is arranged so as not to be in structural contact with the metal tube due to the graphite sheets. The hexaboride tip, the graphite sheets, and the metal tube are configured so as to be mechanically and electrically in contact with one another.
    Type: Application
    Filed: November 24, 2016
    Publication date: February 28, 2019
    Inventors: Toshiaki KUSUNOKI, Tomihiro HASHIZUME, Keigo KASUYA, Takashi OHSHIMA, Yusuke SAKAI, Yoichi OSE, Noriaki ARAI
  • Patent number: 10211022
    Abstract: A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: February 19, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Shinichi Matsubara, Hiroyasu Shichi, Yoshimi Kawanami, Tomihiro Hashizume
  • Publication number: 20190051491
    Abstract: An H3+ ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H3+ ion can be obtained by use of a probe current within a voltage range 21 around a second peak 23 occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.
    Type: Application
    Filed: February 5, 2016
    Publication date: February 14, 2019
    Inventors: Shinichi MATSUBARA, Hiroyasu SHICHI, Tomihiro HASHIZUME, Yoshimi KAWANAMI