Abstract: A composite light-emitting device according to the present invention includes a light-emitting element including a transparent substrate and a multilayer structure formed on the substrate. The multilayer structure includes first and second semiconductor layers of first and second conductivity types, respectively. The device further includes a submount member for mounting the light-emitting element thereon. The principal surface of the submount member faces the multilayer structure. The submount member is electrically connected to the light-emitting element. The light-emitting element is covered with a wavelength-shifting resin member. The resin member is provided on the principal surface of the submount member and contains a photofluorescent or filtering compound. The photofluorescent compound shifts the wavelength of radiation that has been emitted from the light-emitting element, while the filtering compound partially absorbs the radiation.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: Compounds of formula (I) and (II): 1

Abstract: Gamma rays obtained from radioisotope administered to an examinee are detected by a gamma ray information-detecting unit so that a first tomographic image obtained therefrom is formed on a CRT. Further, a second tomographic image of the examinee detected by using an ultrasonic wave information-detecting unit juxtaposed with respect to the gamma ray information-detecting unit is formed while making the second tomographic image overlap on the first tomographic image. Thus, it is possible to obtain a tomographic image in which relative positional relationship of tissue is clear.

Abstract: A composite light-emitting device according to the present invention includes a light-emitting element including a transparent substrate and a multilayer structure formed on the substrate. The multilayer structure includes first and second semiconductor layers of first and second conductivity types, respectively. The device further includes a submount member for mounting the light-emitting element thereon. The principal surface of the submount member faces the multilayer structure. The submount member is electrically connected to the light-emitting element. The light-emitting element is covered with a wavelength-shifting resin member. The resin member is provided on the principal surface of the submount member and contains a photofluorescent or filtering compound. The photofluorescent compound shifts the wavelength of radiation that has been emitted from the light-emitting element, while the filtering compound partially absorbs the radiation.

Abstract: After the position of a collimator with respect to a gamma camera depending on the position of a detection plane in an examinee, gamma rays radiated from the examinee are detected by a scintillation detector via a collimator and a scintillator, and a signal from the scintillation detector is processed by a signal processing circuit and then transferred to an image reconstructing unit, which reconstructs a three-dimensional image of the radiation source in the examinee and displays the three-dimensional image on a display unit.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A composite light-emitting device according to the present invention includes a light-emitting element including a transparent substrate and a multilayer structure formed on the substrate. The multilayer structure includes first and second semiconductor layers of first and second conductivity types, respectively. The device further includes a submount member for mounting the light-emitting element thereon. The principal surface of the submount member faces the multilayer structure. The submount member is electrically connected to the light-emitting element. The light-emitting element is covered with a wavelength-shifting resin member. The resin member is provided on the principal surface of the submount member and contains a photofluorescent or filtering compound. The photofluorescent compound shifts the wavelength of radiation that has been emitted from the light-emitting element, while the filtering compound partially absorbs the radiation.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.

Abstract: A hair protection film of the present invention aims at preventing and curing damage to the hair due to cold permanent wave treatment. The hair protection film for cold permanent wave treatment has a "sandwich" or three layer structure with a center layer coated on both sides with a protective layer. The center layer is formed of a film or a thin layer consisting mainly of at least one of "water-soluble natural sugar", "blood plasma", and "substitute blood plasma", or of a film or a thin film obtained by dispersing an extract of corn grains or a concentrate of brewage in polyvinyl alcohol. The protective layer that coats both surfaces is one of an alkali-soluble coating layer, an acid-soluble coating layer and a heat-soluble coating layer.

Abstract: An improvement is disclosed in the dry method for manufacturing friction materials of the resin mold type, especially brake lining pads, which comprises uniformly mixing graphite particles and a phenolic resin in a liquid form, solidifying the mixture, grinding the solidified mixture, and using the ground material as a binder in forming a friction member of the resin mold type. The binder has a graphite powder content of 2-31 wt.% and a phenolic resin content of 69-98 wt.%. Brake linings of improved wear resistance and fade resistance can be produced using this improved method.

Abstract: An apparatus for charging a rechargeable battery adapted to be responsive to a charge state of the battery to stop charging the battery, wherein said battery is connected to a direct current voltage source through a switching transistor, which is connected to be responsive to a level detected output of a level detector for level detecting a differentiated output of a differentiation circuit coupled to said battery at a predetermined threshold voltage level of said differentiated voltage output which is selected such that the level detected output is obtained if and when said battery has just been fully charged, whereby said switching transistor is controlled to be non-conductive or less conductive to terminate a charging current supplied to said battery.