Patents by Inventor Tomio Kajigaya
Tomio Kajigaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10715101Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of more than 1000 mass ppm and 2000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 550° C. or more and 600° C. or less, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 1×1010 ?·cm or less.Type: GrantFiled: June 8, 2016Date of Patent: July 14, 2020Assignee: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio Kajigaya
-
Patent number: 10711371Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 500° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 1×1010 ?·cm or less.Type: GrantFiled: June 8, 2016Date of Patent: July 14, 2020Assignee: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio Kajigaya
-
Patent number: 10651818Abstract: To provide a method of producing a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and also variations in volume resistivity are small among substrates machined from the same ingot. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which a lithium niobate single crystal having a Fe concentration of 50 mass ppm or more and 2000 mass ppm or less in the single crystal and being in a form of an ingot is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 660° C., which is a melting point of aluminum, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 2×1012 ?·cm or less.Type: GrantFiled: June 8, 2016Date of Patent: May 12, 2020Assignee: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio Kajigaya
-
Publication number: 20190233969Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 350° C. or more and less than 450° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×1010 ?·cm to 2×1012 ?·cm or less.Type: ApplicationFiled: April 6, 2019Publication date: August 1, 2019Applicant: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio KAJIGAYA
-
Patent number: 10301742Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 350° C. or more and less than 450° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×1010 ?·cm to 2×1012 ?·cm or less.Type: GrantFiled: June 8, 2016Date of Patent: May 28, 2019Assignee: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio Kajigaya
-
Publication number: 20190007025Abstract: To provide a method of producing a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and also variations in volume resistivity are small among substrates machined from the same ingot. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which a lithium niobate single crystal having a Fe concentration of 50 mass ppm or more and 2000 mass ppm or less in the single crystal and being in a form of an ingot is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 660° C., which is a melting point of aluminum, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 2×1012 ?·cm or less.Type: ApplicationFiled: June 8, 2016Publication date: January 3, 2019Applicant: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio KAJIGAYA
-
Publication number: 20180175822Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of more than 1000 mass ppm and 2000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 550° C. or more and 600° C. or less, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 1×1010?·cm or less.Type: ApplicationFiled: June 8, 2016Publication date: June 21, 2018Applicant: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio KAJIGAYA
-
Publication number: 20180148858Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of more than 1000 mass ppm and 2000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 550° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×1010 ?·cm to 2×1012 ?·cm or less.Type: ApplicationFiled: June 8, 2016Publication date: May 31, 2018Applicant: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio KAJIGAYA
-
Publication number: 20180135204Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 500° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 ?·cm or more to 1×1010 ?·cm or less.Type: ApplicationFiled: June 8, 2016Publication date: May 17, 2018Applicant: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio KAJIGAYA
-
Publication number: 20180135205Abstract: To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same. A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 350° C. or more and less than 450° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of more than 1×1010 ?·cm to 2×1012 ?·cm or less.Type: ApplicationFiled: June 8, 2016Publication date: May 17, 2018Applicant: SUMITOMO METAL MINING CO., LTD.Inventor: Tomio KAJIGAYA
-
Patent number: 9322111Abstract: A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0<x<3 and 0<y<3), and a composition ratio between the La, Gd, and Bi falls within a numeric value range corresponding to the inside of a quadrilateral having composition points A, B, C, and D as vertices in a La—Gd—Bi ternary composition diagram: composition point A (La: 0.15, Gd: 1.66, Bi: 1.19), composition point B (La: 0.32, Gd: 1.88, Bi: 0.80), composition point C (La: 0.52, Gd: 1.68, Bi: 0.80), and composition point D (La: 0.35, Gd: 1.46, Bi: 1.19).Type: GrantFiled: November 10, 2011Date of Patent: April 26, 2016Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Shuuji Oosumi, Yasutaka Nomi, Nobuo Nakamura, Hiroshi Hatanaka, Tomio Kajigaya
-
Patent number: 9303333Abstract: A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89?x?1.43 and 0.85?y?1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 ?m. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.Type: GrantFiled: November 10, 2011Date of Patent: April 5, 2016Assignee: SUMITOMO METAL MINING CO., LTD.Inventors: Shuuji Oosumi, Yasutaka Nomi, Nobuo Nakamura, Hiroshi Hatanaka, Tomio Kajigaya
-
Publication number: 20130224500Abstract: [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator. [Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0<x<3 and 0<y<3), and a composition ratio between the La, Gd, and Bi falls within a numeric value range corresponding to the inside of a quadrilateral having composition points A, B, C, and D as vertices in a La—Gd—Bi ternary composition diagram: composition point A (La: 0.15, Gd: 1.66, Bi: 1.19), composition point B (La: 0.32, Gd: 1.88, Bi: 0.80), composition point C (La: 0.52, Gd: 1.68, Bi: 0.80), and composition point D (La: 0.35, Gd: 1.Type: ApplicationFiled: November 10, 2011Publication date: August 29, 2013Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Shuuji Oosumi, Yasutaka Nomi, Nobuo Nakamura, Hiroshi Hatanaka, Tomio Kajigaya
-
Publication number: 20130224520Abstract: [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator. [Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89×1.43 and 0.85?y?1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 ?m. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.Type: ApplicationFiled: November 10, 2011Publication date: August 29, 2013Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Shuuji Oosumi, Yasutaka Nomi, Nobuo Nakamura, Hiroshi Hatanaka, Tomio Kajigaya
-
Patent number: 7713511Abstract: A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C., to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from 1010 to 1013 ?cm. The substrate obtained has a very low pyroelectricity or no pyroelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.Type: GrantFiled: October 7, 2004Date of Patent: May 11, 2010Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Tomio Kajigaya, Takashi Kakuta
-
Publication number: 20100021373Abstract: A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C., to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from more than 108 to less than 1010 ?cm. The substrate obtained has no pyroelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.Type: ApplicationFiled: September 18, 2009Publication date: January 28, 2010Applicant: SUMITOMO METAL MINING CO., LTD.Inventors: Tomio Kajigaya, Takashi Kakuta
-
Patent number: 7628853Abstract: A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C., to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from more than 108 to less than 1010 ?cm. The substrate obtained has no pyroelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.Type: GrantFiled: October 7, 2004Date of Patent: December 8, 2009Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Tomio Kajigaya, Takashi Kakuta
-
Patent number: 7544247Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.Type: GrantFiled: May 9, 2007Date of Patent: June 9, 2009Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Tomio Kajigaya, Takashi Kakuta
-
Patent number: 7544246Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.Type: GrantFiled: August 22, 2006Date of Patent: June 9, 2009Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Tomio Kajigaya, Takashi Kakuta
-
Patent number: 7544248Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.Type: GrantFiled: August 14, 2007Date of Patent: June 9, 2009Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Tomio Kajigaya, Takashi Kakuta