Patents by Inventor Tomio Kajigaya

Tomio Kajigaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080317663
    Abstract: A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C., to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from more than 108 to less than 1010 ?cm. The substrate obtained has no pyroelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.
    Type: Application
    Filed: October 7, 2004
    Publication date: December 25, 2008
    Inventors: Tomio Kajigaya, Takashi Kakuta
  • Patent number: 7442250
    Abstract: A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C, to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from 106 to 108 ?cm. The substrate obtained has no piezoelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.
    Type: Grant
    Filed: October 7, 2004
    Date of Patent: October 28, 2008
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Tomio Kajigaya, Takashi Kakuta
  • Publication number: 20070289524
    Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.
    Type: Application
    Filed: August 14, 2007
    Publication date: December 20, 2007
    Applicant: SUMITOMO METAL MINING CO., LTD,
    Inventors: Tomio KAJIGAYA, Takashi Kakuta
  • Patent number: 7309392
    Abstract: In a method of producing a lithium niobate substrate by the use of a lithium niobate crystal grown by the Czochralski process, the lithium niobate crystal is heat-treated at a temperature of from 300° C. or more to less than 500° C. in the state the lithium niobate crystal is buried in a powder constituted of at least one element selected from the group consisting of Al, Ti, Si, Ca, Mg and C, or in the state the lithium niobate crystal is held in a container constituted of at least one element selected from the group consisting of Al, Ti, Si, Ca, Mg and C.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: December 18, 2007
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Tomio Kajigaya, Takashi Kakuta
  • Publication number: 20070204788
    Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.
    Type: Application
    Filed: May 9, 2007
    Publication date: September 6, 2007
    Inventors: Tomio KAJIGAYA, Takashi KAKUTA
  • Publication number: 20070122337
    Abstract: A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C., to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from 1010 to 1013 ?cm. The substrate obtained has a very low pyroelectricity or no pyroelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.
    Type: Application
    Filed: October 7, 2004
    Publication date: May 31, 2007
    Inventors: Tomio Kajigaya, Takashi Kakuta
  • Publication number: 20070006797
    Abstract: A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C., to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from 106 to 108 ?cm. The substrate obtained has no pyroelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.
    Type: Application
    Filed: October 7, 2004
    Publication date: January 11, 2007
    Applicant: Sumitomo Metal Mining CO., LTD.
    Inventors: Tomio Kajigaya, Takashi Kakuta
  • Publication number: 20060283375
    Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.
    Type: Application
    Filed: August 22, 2006
    Publication date: December 21, 2006
    Inventors: Tomio Kajigaya, Tokashi Kakuta
  • Publication number: 20060283372
    Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.
    Type: Application
    Filed: August 22, 2006
    Publication date: December 21, 2006
    Inventors: Tomio Kajigaya, Takashi Kakuta
  • Publication number: 20050145165
    Abstract: In a method of producing a lithium niobate substrate by the use of a lithium niobate crystal grown by the Czochralski process, the lithium niobate crystal is heat-treated at a temperature of from 300° C. or more to less than 500° C. in the state the lithium niobate crystal is buried in a powder constituted of at least one element selected from the group consisting of Al, Ti, Si, Ca, Mg and C, or in the state the lithium niobate crystal is held in a container constituted of at least one element selected from the group consisting of Al, Ti, Si, Ca, Mg and C.
    Type: Application
    Filed: November 4, 2004
    Publication date: July 7, 2005
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Tomio Kajigaya, Takashi Kakuta
  • Publication number: 20040255842
    Abstract: In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.
    Type: Application
    Filed: April 6, 2004
    Publication date: December 23, 2004
    Inventors: Tomio Kajigaya, Takashi Kakuta