Abstract: In one embodiment, a system for semiconductor fabrication includes a continuous wave (CW) radio frequency (RF) source and a pulsing RF source. The system further includes a matching network positioned between the CW RF source and the load and a control circuit. The control circuit receives one or more signals indicative of the pulsing RF signal, and selects a portion of the pulsing RF signal. The control circuit then samples at least one parameter during the selected portion of the pulsing RF signal. Based on the at least one parameter, the control circuit causes an alteration of the at least one variable reactance element, which causes the matching network to impedance match between the CW RF source and the load.

Abstract: In one embodiment, the present disclosure may be directed to a method for impedance matching. A matching network is positioned between a radio frequency (RF) source and a plasma chamber. The RF source is configured to provide at least two non-zero pulse levels, and the matching network includes at least one electronically variable capacitor (EVC) configured to alter its capacitance to provide a match configuration. For each of the pulse levels, at a regular time interval, the method determines a first parameter value for a first parameter related to the plasma chamber or matching network. For each of the pulse levels, the method carries out a separate matching process based on the determined parameter values for the pulse level.

Abstract: In one embodiment, the present disclosure is directed to a method for performing diagnostics on a matching network that utilizes an electronically variable capacitor (EVC). According to the method, all the discrete capacitors of the EVC are switched out. At a first node, a parameter associated with a current flowing between a power supply and one or more of the switches of the discrete capacitors is measured. The method then switches in, one at a time, each discrete capacitor of the EVC. Upon the switching in of each discrete capacitor, the method remeasures the parameter at the first node and determines whether a change to the parameter at the first node is within a predetermined range to determine whether the corresponding switch, driver circuit, or filter of the discrete capacitor most recently switch in has failed.

Abstract: In one embodiment, the present disclosure is directed to a method of impedance matching where an RF source is providing at least two non-zero pulse levels. For each of the at least two pulse levels, at a regular time interval, a control unit determines a parameter-related value that is based on a parameter related to the load, and repeatedly detects which of the at least two non-zero pulse levels is being provided by the RF source. Upon detecting one of the at least two non-zero pulse levels, for the detected pulse level, the control unit measures the parameter related to the load to determine a measured parameter value, determines the parameter-related value based on the measured parameter value, and alters the at least one EVC to provide the match configuration, the match configuration based on the parameter-related value.

Abstract: In one embodiment, the present disclosure may be directed to a method for impedance matching. A matching network is positioned between a radio frequency (RF) source and a plasma chamber. The RF source is configured to provide at least two non-zero pulse levels, and the matching network includes at least one electronically variable capacitor (EVC) configured to alter its capacitance to provide a match configuration. For each of the pulse levels, at a regular time interval, the method determines a first parameter value for a first parameter related to the plasma chamber or matching network. For each of the pulse levels, the method carries out a separate matching process based on the determined parameter values for the pulse level.

Abstract: In one embodiment, the present disclosure may be directed to a matching network coupled to an RF source and a plasma chamber and including an electronically variable capacitor (EVC) and a control circuit. The control circuit receives parameter signals and determines corresponding parameter values. For each parameter value, the control circuit determines whether the parameter value is relevant to the matching activity and whether the parameter value is relevant to a second activity of the matching network. The matching network carries out the matching activity based on the parameter values determined to be relevant to the matching activity, and carries out the second activity based on the parameter values determined to be relevant to the second activity.

Abstract: In one embodiment, the present disclosure is directed to a method for impedance matching. The RF source provides at least two repeating, non-zero pulse levels, including a high-priority pulse level and a low-priority pulse level. The matching network comprises at least one EVC, which comprises discrete capacitors configured to switch in and out to provide a plurality of match configurations. Each EVC has a switching limit comprising a predetermined number of switches in or out of the EVC's discrete capacitors in a prior time interval. Upon determining that switching to a new match configuration would cause an EVC to reach the switching limit, the method determines whether the new match configuration is for the low- or high-priority pulse level. If for the low-priority pulse level, the method prevents the switching of the EVC. If for the high-priority pulse level, the method switches the EVC to the new match configuration.

Abstract: In one embodiment, the present disclosure may be directed to a matching network coupled to an RF source and a plasma chamber and including an electronically variable capacitor (EVC) and a control circuit. The control circuit receives parameter signals and determines corresponding parameter values. For each parameter value, the control circuit determines whether the parameter value is relevant to the matching activity and whether the parameter value is relevant to a second activity of the matching network. The matching network carries out the matching activity based on the parameter values determined to be relevant to the matching activity, and carries out the second activity based on the parameter values determined to be relevant to the second activity.

Abstract: In one embodiment, the present disclosure is directed to a method for impedance matching. The RF source provides at least two repeating, non-zero pulse levels, including a high-priority pulse level and a low-priority pulse level. The matching network comprises at least one EVC, which comprises discrete capacitors configured to switch in and out to provide a plurality of match configurations. Each EVC has a switching limit comprising a predetermined number of switches in or out of the EVC's discrete capacitors in a prior time interval. Upon determining that switching to a new match configuration would cause an EVC to reach the switching limit, the method determines whether the new match configuration is for the low- or high-priority pulse level. If for the low-priority pulse level, the method prevents the switching of the EVC. If for the high-priority pulse level, the method switches the EVC to the new match configuration.

Abstract: In one embodiment, the present disclosure is directed to a method for impedance matching including a) positioning a matching network between a radio frequency (RF) source and a plasma chamber; b) determining, from among the plurality of match configurations, a new match configuration to be used when there is an expected pulse level change from a first of the pulse levels to a second of the pulse levels; and c) sending a control signal to alter the at least one EVC to provide the new match configuration. The control signal is sent a predetermined time period before a time for the expected pulse level change, the predetermined time period being substantially similar to a time period for the EVC to switch between two match configurations of the plurality of match configurations.

Abstract: In one embodiment, the present disclosure is directed to a method for impedance matching including a) positioning a matching network between a radio frequency (RF) source and a plasma chamber; b) determining, from among the plurality of match configurations, a new match configuration to be used when there is an expected pulse level change from a first of the pulse levels to a second of the pulse levels; and c) sending a control signal to alter the at least one EVC to provide the new match configuration. The control signal is sent a predetermined time period before a time for the expected pulse level change, the predetermined time period being substantially similar to a time period for the EVC to switch between two match configurations of the plurality of match configurations.

Abstract: In one embodiment, the present disclosure is directed to a method for performing diagnostics on a matching network that utilizes an electronically variable capacitor (EVC). According to the method, all the discrete capacitors of the EVC are switched out. At a first node, a parameter associated with a current flowing between a power supply and one or more of the switches of the discrete capacitors is measured. The method then switches in, one at a time, each discrete capacitor of the EVC. Upon the switching in of each discrete capacitor, the method re-measures the parameter at the first node and determines whether a change to the parameter at the first node is within a predetermined range to determine whether the corresponding switch, driver circuit, or filter of the discrete capacitor most recently switch in has failed.

Abstract: In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes first and second variable capacitors, and a sensor configured to measure a parameter related to the plasma chamber. A control circuit carries out a matching process of determining a parameter-based value based on the measured parameter; inputting the parameter-based value into a match configuration look-up table to determine a match configuration for reducing a reflected power, the match configuration comprising a first variable capacitor configuration, a second variable capacitor configuration, and an RF source frequency; and causing an altering of the first variable capacitor to the first variable capacitor configuration, the second variable capacitor to the second variable capacitor configuration, and the RF source to the RF source frequency.

Abstract: In one embodiment, the present disclosure is directed to a method of impedance matching where an RF source is providing at least two non-zero pulse levels. For each of the at least two pulse levels, at a regular time interval, a control unit determines a parameter-related value that is based on a parameter related to the load, and repeatedly detects which of the at least two non-zero pulse levels is being provided by the RF source. Upon detecting one of the at least two non-zero pulse levels, for the detected pulse level, the control unit measures the parameter related to the load to determine a measured parameter value, determines the parameter-related value based on the measured parameter value, and alters the at least one EVC to provide the match configuration, the match configuration based on the parameter-related value.

Abstract: In one embodiment, the present disclosure is directed to a method for matching an impedance. The method can include determining or receiving a reflection parameter value at an RF input or output; stopping the altering of a first capacitance and a second capacitance when the reflection parameter value is at or below a first reflection value; causing a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a second reflection value and at or below the third reflection value; and causing an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value.

Abstract: A control circuit for a impedance matching circuit having first and second capacitor arrays receives as input one or more RF parameters of the impedance matching circuit, and in response thereto: determines a first match configuration for the first capacitor array and a second match configuration for the second capacitor array to create an impedance match between a fixed RF source impedance and a variable RF load impedance, the first match configuration and the second match configuration being determined from one or more look-up tables and based upon the detected one or more RF parameters; and alters at least one of the first array configuration and the second array configuration to the first match configuration and the second match configuration, respectively, by controlling the on and off states of (a) each discrete capacitor of the first capacitor array and (b) each discrete capacitor of the second capacitor array.

Abstract: In one embodiment, the present disclosure is directed to a method for matching an impedance. The method can include determining or receiving a reflection parameter value at an RF input or output; stopping the altering of a first capacitance and a second capacitance when the reflection parameter value is at or below a first reflection value; causing a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a second reflection value and at or below the third reflection value; and causing an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value.

Abstract: In one embodiment, an RF generator includes an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint indicative of a desired output power at the RF output; determine a power dissipation at the RF generator; alter the DC voltage to decrease the power dissipation at the RF generator; and alter the RF signal to enable the output power at the RF output to be substantially equal to the power setpoint.

Abstract: In one embodiment, an RF generator includes an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint indicative of a desired output power at the RF output; determine a power dissipation at the RF generator; alter the DC voltage to decrease the power dissipation at the RF generator; and alter the RF signal to enable the output power at the RF output to be substantially equal to the power setpoint.

Abstract: A control circuit for a impedance matching circuit having first and second capacitor arrays receives as input one or more RF parameters of the impedance matching circuit, and in response thereto: determines a first match configuration for the first capacitor array and a second match configuration for the second capacitor array to create an impedance match between a fixed RF source impedance and a variable RF load impedance, the first match configuration and the second match configuration being determined from one or more look-up tables and based upon the detected one or more RF parameters; and alters at least one of the first array configuration and the second array configuration to the first match configuration and the second match configuration, respectively, by controlling the on and off states of (a) each discrete capacitor of the first capacitor array and (b) each discrete capacitor of the second capacitor array.