Abstract: Embodiments in accordance with the present invention allow a second end-point determination (EPD) system to actively control the end-pointing of a semiconductor process chamber, by leveraging a legacy EPD system that is already integrated with the chamber. In one embodiment, the second EPD system controls a shutter that regulates the amount of light transmitted between a plasma light source and an optical emission spectroscopy (OES) sensor of the legacy OES EPD system. In this embodiment, the legacy OES EPD system is pre-configured to call end-point when an artificial end-point condition occurs, i.e. the intensity of light falls below a pre-set threshold. When the second EPD system determines an actual end-point condition has been reached, it closes the shutter which, causes the light intensity being read by the OES sensor to fall below the pre-set threshold. This in turn triggers an end-point command to the chamber from the legacy OES EPD system.

Abstract: Embodiments in accordance with the present invention allow a second end-point determination (EPD) system to actively control the end-pointing of a semiconductor process chamber, by leveraging a legacy EPD system that is already integrated with the chamber. In one embodiment, the second EPD system controls a shutter that regulates the amount of light transmitted between a plasma light source and an optical emission spectroscopy (OES) sensor of the legacy OES EPD system. In this embodiment, the legacy OES EPD system is pre-configured to call end-point when an artificial end-point condition occurs, i.e. the intensity of light falls below a pre-set threshold. When the second EPD system determines an actual end-point condition has been reached, it closes the shutter which, causes the light intensity being read by the OES sensor to fall below the pre-set threshold. This in turn triggers an end-point command to the chamber from the legacy OES EPD system.

Abstract: Matching the variable impedance of a load with the fixed impedance of a radio frequency (RF) power generator to provide maximum power transfer. The impedance matching network further allows a RF power generator to vary the frequency of the voltage applied to a load, e.g., a plasma chamber as may be utilized in semiconductor or flat panel plasma display manufacturing processes. The impedance matching network further utilizes fixed solid state components to adjust the impedance of the attached load to provide maximum power transfer between the generator and the load. A parallel switched capacitor network is controlled by an electrical switching means such as PIN diodes to turn fixed capacitors on or off. A means for varying the frequency of the applied voltage is used to match the impedance of the load with the impedance of the RF power generator within milliseconds.