Patents by Inventor Tommy Yu

Tommy Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6368935
    Abstract: A method for upgrading qualities of DRAM capacitors and wafer-to-wafer uniformity is disclosed. In order to effectively prevent wafers from contaminations, the invention uses an additional silane purge process in situ before performing a SHSG seeding process on the wafers. The silane purge process of this invention utilizes the original silane seeding gas inlet. In this manner, not only thicknesses and surface areas of the SHSG seeds and capacitances of DRAMs can be increased, but also wafer-to-wafer uniformity can be upgraded.
    Type: Grant
    Filed: January 31, 2001
    Date of Patent: April 9, 2002
    Assignee: United Microelectronics Corp.
    Inventors: Cheng-Chieh Huang, Tommy Yu