Patents by Inventor Tomohiko Abe
Tomohiko Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20010045528Abstract: An electron beam radiation apparatus having an electrostatic deflector capable of deflecting the electron beam with high accuracy and with a reduced displacement of the deflection position, is disclosed. The electrostatic deflector comprises a cylindrical holding member made of an insulating material and a plurality of electrodes separately fixed from each other inside of the holding member with at least a part of the surface thereof covered with a metal film. The holding member has a plurality of wedge-shaped fixing holes corresponding to the portions of the electrodes where they are fixed, respectively, the holes having a larger diameter on the outer peripheral surface than on the inner peripheral surface of the holding member. The electrodes are fixed on the holding member in such a manner that a molten joining metal is injected in the fixing holes with the electrodes arranged on the holding member and the joining metal is hardened in close contact with the metal film of the electrodes.Type: ApplicationFiled: June 21, 2001Publication date: November 29, 2001Inventors: Yoshihisa Ooae, Hitoshi Tanaka, Takeshi Haraguchi, Kazuto Ashiwara, Tomohiko Abe, Ryoji Kato
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Publication number: 20010013581Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: ApplicationFiled: April 6, 2001Publication date: August 16, 2001Inventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 6268606Abstract: An electrostatic deflector of an electron beam exposure apparatus is disclosed. A cylindrical holding member is made of an insulating material. An electrode including a plurality of electrode members fixedly arranged in spaced relationship to each other and having at least a portion of the surface thereof grown with a metal film is disposed inside the holding member. The electrode members each formed with a metal film on the surface thereof are made of a conductive ceramic having a resistivity selected at least in the range of 0.001 &OHgr;•cm to 1000 &OHgr;•cm.Type: GrantFiled: June 22, 1999Date of Patent: July 31, 2001Assignee: Advantest CorporationInventors: Tomohiko Abe, Yoshihisa Ooae, Hiroshi Yasuda
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Patent number: 6242751Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: GrantFiled: July 15, 1999Date of Patent: June 5, 2001Assignee: Fujitsu LimitedInventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 6118129Abstract: A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.Type: GrantFiled: April 1, 1999Date of Patent: September 12, 2000Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 6055719Abstract: The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the charged particle beam. The apparatus comprises: a mirror barrel through which the charged particle beam is passed; and an electrostatic deflector, provided in the mirror barrel, for deflecting the charged particle beam. The electrostatic deflector has a plurality of pairs of electrodes, which are made of a conductive material having carbon as a primary element and are embedded in an internal face of an insulating cylinder. The present invention also relates to a method for forming the electrostatic deflector.Type: GrantFiled: March 5, 1998Date of Patent: May 2, 2000Assignee: Fujitsu LimitedInventors: Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda
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Patent number: 5977548Abstract: A charged particle beam exposure method including steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: November 8, 1996Date of Patent: November 2, 1999Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 5969365Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: GrantFiled: August 26, 1997Date of Patent: October 19, 1999Assignee: Fujitsu LimitedInventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 5965895Abstract: A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.Type: GrantFiled: November 4, 1997Date of Patent: October 12, 1999Assignee: Fujitsu LimitedInventors: Takamasa Satoh, Hiroshi Yasuda, Junichi Kai, Yoshihisa Oae, Hisayasu Nishino, Kiichi Sakamoto, Hidefumi Yabara, Isamu Seto, Masami Takigawa, Akio Yamada, Soichiro Arai, Tomohiko Abe, Takashi Kiuchi, Kenichi Miyazawa
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Patent number: 5949078Abstract: An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower that the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode andType: GrantFiled: August 7, 1998Date of Patent: September 7, 1999Assignee: Fujitsu LimitedInventors: Yoshihisa Ooaeh, Tomohiko Abe, Akio Yamada, Hiroshi Yasuda, Kenj Kudoh, Kouzi Takahata
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Patent number: 5920077Abstract: A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device; and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: February 12, 1998Date of Patent: July 6, 1999Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 5872366Abstract: An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode andType: GrantFiled: August 8, 1997Date of Patent: February 16, 1999Assignee: Fujitsu LimitedInventors: Yoshihisa Ooaeh, Tomohiko Abe, Akio Yamada, Hiroshi Yasuda, Kenj Kudoh, Kouzi Takahata
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Patent number: 5841145Abstract: By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+?RA.multidot.i! (A0 and i are integers, ? ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction.Type: GrantFiled: March 4, 1996Date of Patent: November 24, 1998Assignee: Fujitsu LimitedInventors: Takamasa Satoh, Yoshihisa Oae, Soichiro Arai, Kenichi Miyazawa, Hiroshi Yasuda, Manabu Ohno, Hitoshi Watanabe, Junichi Kai, Tomohiko Abe, Akio Yamada, Yasushi Takahashi
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Patent number: 5770862Abstract: The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the charged particle beam. The apparatus comprises: a mirror barrel through which the charged particle beam is passed; and an electrostatic deflector, provided in the mirror barrel, for deflecting the charged particle beam. The electrostatic deflector has a plurality of pairs of electrodes, which are made of a conductive material having carbon as a primary element and are embedded in an internal face of an insulating cylinder. The present invention also relates to a method for forming the electrostatic deflector.Type: GrantFiled: December 4, 1996Date of Patent: June 23, 1998Assignee: Fujitsu Ltd.Inventors: Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda
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Patent number: 5757015Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: GrantFiled: April 18, 1996Date of Patent: May 26, 1998Assignee: Fujitsu LimitedInventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 5721432Abstract: To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area.Type: GrantFiled: June 20, 1996Date of Patent: February 24, 1998Assignee: Fujitsu LimitedInventors: Takamasa Satoh, Hiroshi Yasuda, Junichi Kai, Yoshihisa Oae, Hisayasu Nishino, Kiichi Sakamoto, Hidefumi Yabara, Isamu Seto, Masami Takigawa, Akio Yamada, Soichiro Arai, Tomohiko Abe, Takashi Kiuchi, Kenichi Miyazawa
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Patent number: 5719402Abstract: To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area.Type: GrantFiled: April 4, 1996Date of Patent: February 17, 1998Assignee: Fujitsu LimitedInventors: Takamasa Satoh, Hiroshi Yasuda, Junichi Kai, Yoshihisa Oae, Hisayasu Nishino, Kiichi Sakamoto, Hidefumi Yabara, Isamu Seto, Masami Takigawa, Akio Yamada, Soichiro Arai, Tomohiko Abe, Takashi Kiuchi, Kenichi Miyazawa
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Patent number: 5614725Abstract: A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: March 4, 1996Date of Patent: March 25, 1997Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 5590048Abstract: In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.Type: GrantFiled: June 4, 1993Date of Patent: December 31, 1996Assignee: Fujitsu LimitedInventors: Tomohiko Abe, Hiroshi Yasuda, Kiichi Sakamoto, Yoshihisa Oae
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Patent number: 5546319Abstract: To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area.Type: GrantFiled: January 27, 1995Date of Patent: August 13, 1996Assignee: Fujitsu LimitedInventors: Takamasa Satoh, Hiroshi Yasuda, Junichi Kai, Yoshihisa Oae, Hisayasu Nishino, Kiichi Sakamoto, Hidefumi Yabara, Isamu Seto, Masami Takigawa, Akio Yamada, Soichiro Arai, Tomohiko Abe, Takashi Kiuchi, Kenichi Miyazawa