Abstract: A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

Abstract: A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam.

Abstract: A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and second mask deflectors, energizing the first mask deflector and simultaneously the second mask deflector according to the first relativistic relationship so as to hit a selected aperture on the stencil mask, to obtain an absolute deflection of the charged particle beam as a function of the energization of the first mask deflector, energizing third and fourth mask deflectors provided at a downstream side of the stencil mask simultaneously to obtain a second relativistic relationship of energization between the third and fourth mask deflectors, and energizing the first through fourth mask deflectors according to the first and second relativistic relationship and further to the absolute relationship, such that the charged particle bea

Abstract: An electron beam exposure apparatus is provided with an electron gun emitting an electron beam, a blanking aperture array including a plurality of two-dimensionally arranged blanking apertures for selectively deflecting the electron beam passing through the blanking apertures in a predetermined direction so as to shape the electron beam into a plurality of electron beams, a deflection device for regularly deflecting the electron beams passed through the blanking aperture array, and an electron beam controller for controlling the electron beams passed through the blanking aperture array so as to irradiate and expose an object surface. The electron gun has a needle shaped chip which comprises a pair of sloping surfaces which are <100> faces, and a vertex portion connecting the sloping surfaces and forming an inverted V-shape at a tip end of the needle shaped chip when viewed in a direction in which the vertex portion extends.

Abstract: A lithography system and a method of using the same, wherein a charged-particle beam is deflected to pass through a selected block of stencil pattern on a stencil mask and thereafter the beam forms an image of the stencil pattern on an objective, the lithography system comprising astigmatism and focus compensation coils disposed on both the upstream and downstream sides of the stencil mask, thereby aberration of the incident beam onto the stencil mask being corrected by the astigmatism and focus compensation coils disposed on the upstream side forming a sharp image on the mask, and further aberration of the mask-penetrated beam on the downstream side being corrected by the astigmatism and focus compensation coils disposed on the downstream side forming a sharp image of the stencil pattern on the objective.

Abstract: A green light emitting phosphor comprising tetravalent elements added to a green light emitting phosphor, Y.sub.3 (Al,Ga).sub.5 O.sub.12 :Tb, wherein the green light emitting phosphor can prevent a so-called electron beam burning even when excited by electron beams of high energy. The green light emitting phosphor is, particularly suitable to be applied to a projector tube or a high-brightness phosphor display tube.

Abstract: A disk cartridge having a cleaning mechanism. The disk cartridge comprises a disk for peripheral storage of computer and a hard shell which is made of plastic and contains the disk.A liner is disposed between a disk and a shell. An opening is provided in one part of shell and a plate is disposed in the opening to press a liner. In order to press the plate, a pressure means such as a spring is provided in a read/write apparatus. As a result, dust is completely removed from the disk.Further, a pressure means for pressing the liner is provided outside of a shell, maintaining the stable pressure of spring for a long time. As a result, disk is improved in reliability.

Abstract: A method for manufacturing a luminescent material having the formula:Y.sub.3 Al.sub.5 O.sub.12 : Tbin which the raw materials for the synthesis are combined in appropriate amounts together with a flux consisting of barium fluoride, barium chloride, or mixtures of the two and then heated in a sealed state to a temperature between about 1300.degree. C. and 1600.degree. C. The resultant product is then leached with an alkaline or acid solution to remove the residual flux from the product.

Abstract: A luminescent material is disclosed which has the general formula:Zn.sub.1-x Cd.sub.x S:Ce.sub.y, M.sub.zwherein M is at least one alkali metal selected from Li, Na, K, Rb, and Cs, x is from about 0 to about 0.3, y and z are densities (g-atom/mol Zn.sub.1-x Cd.sub.x S) of Ce and M relative to Zn.sub.1-x Cd.sub.x S, y is from about 7.times.10.sup.-6 to about 1.5.times.10.sup.-2, and z is from about 7.times.10.sup.-6 to about 1.5.times.10.sup.-2.A method for making a luminescent material having the general formula:(ZnCd)S:Ce,Mwherein M is at least one alkali metal selected from Li, Na, K, Rb and Cs is disclosed which comprises the steps of preparing a mixture of (ZnCD)S:Ce compound, and alkali metal compound, heating the mixture under non-oxidizing atmosphere at a temperature between about 900.degree. C. and about 1170.degree. C., and quenching said mixture from said temperature.