Abstract: A deposition method includes moving a substrate in a first direction within a processing chamber; generating a first source gas by evaporating a first film forming source material; discharging the first source gas from a first discharge opening toward the substrate being moved in the processing chamber; forming a first line-shaped thin film elongated in the first direction by depositing the first source gas on the substrate; generating a second source gas by evaporating a second film forming source material; discharging the second source gas from a second discharge opening offset from the first discharge opening in a second direction, which intersects the first direction, toward the substrate being moved in the processing chamber; and forming a second line-shaped thin film elongated in the first direction by depositing the second source gas on the substrate at a position spaced apart from the first line-shaped thin film.

Abstract: There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.

Abstract: There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.

Abstract: A deposition apparatus includes: a plurality of deposition sources, each of which includes a material container and a carrier gas introducing pipe, vaporizes a film-forming material stored in the material container, and transfers vaporized molecules of the film-forming material by using a first carrier gas introduced from the carrier gas introducing pipe; a connecting pipe, which is connected to the plurality of deposition sources and transfers the vaporized molecules of the film-forming material transferred from each deposition source; a bypass pipe, which is connected to the connecting pipe and directly introduces a second carrier gas to the connecting pipe; and a processing container, which includes a built-in discharge mechanism connected to the connecting pipe and forms a film on a target object therein by discharging, from the discharge mechanism, the vaporized molecules of the film-forming material transferred by using the first and second carrier gases.

Abstract: An organic film and a metal electrode (a cathode film) are formed on an indium tin oxide (ITO) of a substrate. The plasma processing apparatus supplies at least one of a predetermined processing gas for chemically reacting with the organic film and a predetermined inert gas for sputtering the organic film from a gas supply source into a processing container, wherein the metal electrode is used as a mask. The plasma processing gas also supplies microwaves from a microwave generator as energy for exciting the at least one of the predetermined processing gas and the predetermined inert gas. The plasma processing apparatus generates plasma from the at least one of the predetermined processing gas and the predetermined inert gas supplied to the processing container by using electric field energy of the microwaves, and etches the organic film by using the generated plasma.

Abstract: An electrostatically driven micro-device includes a base substrate configured to have an electrically insulated surface, a rotatable electrode configured to be rotatable with respect to the base substrate, at least one recessed area configured to be recessed by a predetermined depth from surface of the base substrate, and a fixed electrode formed with a predetermined thickness on each of the at least one recessed area, the fixed electrode being located close to the rotatable electrode so as to generate an electrostatic attractive force between the fixed electrode and the rotatable electrode when a voltage is applied therebetween. The predetermined thickness of the fixed electrode is thinner than the predetermined depth of the at least one recessed area. A rotatable angle range of the rotatable electrode is restricted by the surface of the base substrate.

Abstract: A semiconductor circuit device includes: a substrate; a semiconductor circuit formed on an upper surface of the substrate; a connecting part that is formed on a side face of the substrate, and the connecting part electrically connecting to the semiconductor circuit.