Abstract: Provided is a high-frequency circuit module that has high mounting density. In a high-frequency circuit module, an RFIC that performs transmission and reception processes for high-frequency signals, a power amplifier IC that amplifies a transmission signal from the RFIC, and a duplexer that separates a transmission signal outputted from the power amplifier IC to an antenna and a reception signal that is inputted from the antenna to the RFIC are formed on the top surface thereof. The duplexer is disposed between the RFIC and the power amplifier IC.

Abstract: A high-frequency circuit module having a high mounting density is provided. The high-frequency circuit module includes an RFIC configured to transmit and receive a high-frequency signal, a power amplifier IC configured to amplify a transmission signal output from the RFIC, and duplexers configured to separate the transmission signal output from the power amplifier IC and input to an antenna and a received signal from the antenna and input to the RFIC from each other, wherein at least one of the RFIC and power amplifier IC is embedded in the circuit board, and the duplexers are disposed between the RFIC and the power amplifier IC.

Abstract: The high frequency circuit module includes an RFIC configured to transmit and receive a high frequency signal, a power amplifier IC configured to amplify a transmission signal outputted from the RFIC, and a duplexers configured to separate the transmission signal outputted from the power amplifier IC and inputted to an antenna and a reception signal from the antenna and inputted to the RFIC from each other, in which at least one of the RFIC and power amplifier IC is embedded in the circuit substrate, and the duplexers are disposed between the RFIC and the power amplifier IC.

Abstract: The high frequency circuit module includes an RFIC configured to transmit and receive a high frequency signal, a power amplifier IC configured to amplify a transmission signal outputted from the RFIC, and a duplexers configured to separate the transmission signal outputted from the power amplifier IC and inputted to an antenna and a reception signal from the antenna and inputted to the RFIC from each other, in which at least one of the RFIC and power amplifier IC is embedded in the circuit substrate, and the duplexers are disposed between the RFIC and the power amplifier IC.

Abstract: The high frequency circuit module includes an RFIC configured to transmit and receive a high frequency signal, a power amplifier IC configured to amplify a transmission signal outputted from the RFIC, and a duplexers configured to separate the transmission signal outputted from the power amplifier IC and inputted to an antenna and a reception signal from the antenna and inputted to the RFIC from each other, in which at least one of the RFIC and power amplifier IC is embedded in the circuit substrate, and the duplexers are disposed between the RFIC and the power amplifier IC.

Abstract: The high frequency circuit module includes an RFIC configured to transmit and receive a high frequency signal, a power amplifier IC configured to amplify a transmission signal outputted from the RFIC, and a duplexers configured to separate the transmission signal outputted from the power amplifier IC and inputted to an antenna and a reception signal from the antenna and inputted to the RFIC from each other, in which at least one of the RFIC and power amplifier IC is embedded in the circuit substrate, and the duplexers are disposed between the RFIC and the power amplifier IC.

Abstract: The high frequency circuit module includes an RFIC configured to transmit and receive a high frequency signal, a power amplifier IC configured to amplify a transmission signal outputted from the RFIC, and a duplexers configured to separate the transmission signal outputted from the power amplifier IC and inputted to an antenna and a reception signal from the antenna and inputted to the RFIC from each other, in which at least one of the RFIC and power amplifier IC is embedded in the circuit substrate, and the duplexers are disposed between the RFIC and the power amplifier IC.

Abstract: Provided is a high-frequency circuit module that has high mounting density. In a high-frequency circuit module, an RFIC that performs transmission and reception processes for high-frequency signals, a power amplifier IC that amplifies a transmission signal from the RFIC, and a duplexer that separates a transmission signal outputted from the power amplifier IC to an antenna and a reception signal that is inputted from the antenna to the RFIC are formed on the top surface thereof. The duplexer is disposed between the RFIC and the power amplifier IC.

Abstract: A high-frequency circuit module having a high mounting density is provided. The high-frequency circuit module includes an RFIC configured to transmit and receive a high-frequency signal, a power amplifier IC configured to amplify a transmission signal output from the RFIC, and duplexers configured to separate the transmission signal output from the power amplifier IC and input to an antenna and a received signal from the antenna and input to the RFIC from each other, wherein at least one of the RFIC and power amplifier IC is embedded in the circuit board, and the duplexers are disposed between the RFIC and the power amplifier IC.

Abstract: Provided is a high-frequency circuit module that has high mounting density. In a high-frequency circuit module 100, an RFIC 160 that performs transmission and reception processes for high-frequency signals, a power amplifier IC 155 that amplifies a transmission signal from the RFIC, and a duplexer 110 that separates a transmission signal outputted from the power amplifier IC 155 to an antenna and a reception signal that is inputted from the antenna to the RFIC 160 are formed on the top surface thereof. The duplexer 110 is disposed between the RFIC 160 and the power amplifier IC 155.

Abstract: A multilayer filter wherein the capacitances of capacitors are reduced to reduce the size of the filter without substantially affecting the filter frequency characteristics. A predetermined filter circuit includes plural electrodes in a dielectric ceramic device body. Each of the capacitors is respectively disposed at input and output ends of the filter circuit and has one end connected to one of input/output terminals. Winding-type inductors, interposed between the input/output terminals and the one ends of the capacitors, are in the device body.

Abstract: A method for forming a self-aligned bipolar transistor includes the steps of combination etching a silicon substrate in an opening to form a concave surface on the silicon substrate, and forming an intrinsic base and an associated emitter on the concave surface. The combination etching includes an isotropic etching and subsequent wet etching. The concave surface increases the distance between the external base for the intrinsic base and the emitter to thereby increase the emitter-base breakdown voltage.

Abstract: A method for forming a self-aligned bipolar transistor includes the steps of combination etching a silicon substrate in an opening to form a concave surface on the silicon substrate, and forming an intrinsic base and an associated emitter on the concave surface. The combination etching includes an isotropic etching and subsequent wet etching. The concave surface increases the distance between the external base for the intrinsic base and the emitter to thereby increase the emitter-base breakdown voltage.