Abstract: An infrared sensor includes a first infrared sensing element separated by a dielectric layer from on a silicon substrate and thermally isolated from the substrate by a void in the dielectric layer. The sensor has a second temperature sensing element which detects the temperature of the whole sensor. The output difference between the first and second sensor elements is used as gate/source voltage of a MOSFET. The current variation of the MOSFET is read out as a discharge from a capacitor connected to the MOSFET. The noise in the sensor is suppressed, and performance is improved. An infrared sensor array includes the sensors arranged in an array.

Abstract: A two-dimensional infrared focal plane array of temperature detecting units is provided with the temperature detecting units being arranged for every pixel in a two-dimensional arrangement on a semiconductor substrate. Each temperature detecting unit is formed integrally with readout circuitry. Each temperature detecting unit further has a temperature detecting portion which is supported by support legs made of a high thermal resistance material to reduce heat flow to the semiconductor substrate. Each temperature detecting unit also has a temperature detecting element with an infrared ray absorbing portion which is spliced by at least one splicing pillar with the temperature detecting element.

Abstract: A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.

Abstract: In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection section (5) and a backward bias connection section (6) formed for each semiconductor layer (1) to be forward and backward biases to an external bias voltage, and a metal thin film (2) for electrically connecting the semiconductor layers (1) to each other through both the forward bias connection section and the backward bias connection section (5 and 6).

Abstract: An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.

Abstract: An optical material, comprising a resin composed of a polymer constituted of a first structural unit composed of at least one of the compounds represented by the formula (I), and of a second structural unit composed of at least one of the compounds represented by the formula (II), and having a weight-average molecular weight of from 1.times.10.sup.3 to 5.times.10.sup.6 : ##STR1## where R.sub.1 denotes an alkyl group having 1 to 18 carbons or a cycloalkyl group having 3 to 8 carbons; ##STR2## where R.sub.2 denotes hydrogen or an alkyl group having 1 to 8 carbons, and R.sub.3 and R.sub.4 denote respectively an alkyl group having 1 to 8 carbons. The optical material is superior in transparency, heat resistance, surface hardness, mechanical strength, and other properties.

Abstract: An optical material, comprising a resin composed of a polymer constituted of 10 of 95 mol %, based on the polymer, of a first structural unit represented by the formula (I) and 90 to 5 mol %, based on the polymer, of a second structural unit represented by the formula (II), and having a weight-average molecular weight of from 1.times.10.sup.3 to 5.times.10.sup.6 in polystyrene equivalent: ##STR1## The optical material has a Tg value not less than 120.degree. C., a light transmittance value not less than 85%, and a pencil hardness not lower than H.

Abstract: A separation membrane comprising a resin being constituted of the repeating unit represented by the general formula (I) and having a number average molecular weight of not less than 1.times.10.sup.3 in polystyrene equivalent: ##STR1## wherein R.sub.1 denotes an alkyl group of 1-20 carbons, a fluoroalkyl group of 1-20 carbons, or a group represented by the general formula: --(--X--).sub.m --(SiR.sub.2 R.sub.3 --).sub.n --R.sub.4, or --(--X--).sub.m --(--SiR.sub.2 R.sub.3 O--).sub.n --SiR.sub.4 R.sub.5 R.sub.6 (wherein X is an alkylene group of 1-8 carbons or a phenylene group of 6-12 carbons; m is 0 or 1; n is an integer of 1-20; R.sub.2, R.sub.3, R.sub.4, R.sub.5, and R.sub.6 are respectively a group, having 1-8 carbons, selected from an alkyl group, a cycloalkyl group, a phenyl group, an alkoxyl group, and a fluoroalkyl group, and may be the same with or different from each other).

Abstract: A method for producing articles of composite resin, wherein a liquid crystal polymer material in powder form is mixed with a second, melt-processable polymer material; the resulting mixture is kneaded at a temperature at which the second polymer material will melt but at which no deformation of the liquid crystal polymer will be caused so as to prepare a blend comprising the liquid crystal polymer powder uniformly dispersed in the matrix of the second polymer; and the blend is then subjected to a molding or shaping process at a temperature within the range at which the liquid crystal polymer is capable of forming liquid crystals.

Abstract: Aromatic sulfide amide polymers composed of a repeating unit having the formula (I) and a repeating unit having the formula (II) below, having an inherent viscosity ranging from 0.02 to 10 dl/g. ##STR1## wherein, Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4 are same or different aromatic rings and R.sup.1, R.sup.2, R.sup.3 and R.sup.