Abstract: A method of controlling an automatic transmission is provided. The automatic transmission includes a piston having first and second surfaces opposite from each other, friction plates, engaging and disengaging hydraulic pressure chambers for supplying/discharging hydraulic pressure and directing the piston to push the friction plates to be engaged and disengaged, a hydraulic pressure control valve for supplying/discharging hydraulic pressure to/from the chambers, and first and second oil paths communicating the valve with the chambers. The second surface has a larger area for receiving hydraulic pressure than the first surface. The method includes controlling the disengaged friction plates to be engaged by adjusting the hydraulic pressure to a first pressure in a first period in response to a gear shift command and adjusting the hydraulic pressure to a second pressure in a second period. The first pressure is changed depending on a state of the automatic transmission.

Abstract: A method of controlling an automatic transmission mounted on a vehicle having an automatic engine stop mechanism for automatically stopping and restarting an engine, is provided. The transmission includes a piston having first and second surfaces, friction plates, engaging and disengaging hydraulic pressure chambers, a hydraulic pressure control valve for supplying/discharging hydraulic pressure to/from the chambers, first and second oil paths communicating the control valve with the chambers, a pressure reducing valve for preventing pressure of the disengaging chamber from exceeding a given set pressure, a hydraulic pressure supply device for supplying pressure to the control valve in the automatic stop state, and a mechanical oil pump for supplying pressure to the control valve while the engine is driving, the second surface having a larger pressure receiving area than the first surface. The method includes adjusting the set pressure to be lower in the automatic stop state than while driving.

Abstract: A frictional engagement element includes: a first piston, a second piston, a first urging member for urging the first piston in a direction of releasing a friction plate, and a second urging member for urging the second piston in the direction of releasing the friction plate with an urging force larger than the urging force of the first urging member. One of the first and second pistons has a communicating hole for connecting an engaging hydraulic chamber with an opposite hydraulic chamber and the other of the first and second pistons has a valve part for closing the communicating hole. The difference in travel distance between the first and second pistons in motion due to the different urging forces of the first and second urging members causes the valve part to open the communicating hole.

Abstract: An automatic transmission includes a piston movable in an axial direction, a plurality of friction plates disposed on a side of a first surface of the piston, a fastening hydraulic chamber applying a hydraulic pressure to a second surface of the piston to move the piston to a fastening position where the friction plates are pressed to be fastened to each other, a release hydraulic chamber applying a hydraulic pressure to the first surface of the piston to move the piston to a release position where the friction plates are released, and a hydraulic pressure control valve that supplies and discharges the hydraulic pressure to and from each of the fastening hydraulic chamber and the release hydraulic chamber. An area of the second surface of the piston for receiving the hydraulic pressure is set to be larger than an area of the first surface for receiving the hydraulic pressure.

Abstract: An object is to suppress excessive insertion of a fueling nozzle during fueling. A nozzle guide configured to form a nozzle guide path that guides a fueling nozzle is placed inside of a filler neck main body configured to include a fuel passage that introduces a fuel supplied from the fueling nozzle toward a fuel tank. This nozzle guide comprises a first projection for nozzle restriction provided on a nozzle guide end opening portion at an end of the nozzle guide path along a nozzle guide direction and protruded from an end opening circumferential wall of the nozzle guide end opening portion to narrow at least part of a diameter of the nozzle guide path; and a second projection for nozzle restriction provided on a downstream side of the first projection along the nozzle guide direction and protruded from the end opening circumferential wall to narrow at least part of the diameter of the nozzle guide path.

Abstract: A method of controlling an automatic transmission is provided. The automatic transmission includes a piston having first and second surfaces opposite from each other, friction plates, engaging and disengaging hydraulic pressure chambers for supplying and discharging hydraulic pressure and directing the piston to push the friction plates to be engaged and disengaged, a hydraulic pressure control valve for supplying and discharging hydraulic pressure to and from the chambers, first and second oil paths communicating the valve with the chambers, and a pressure reducing valve disposed in the second oil path and for preventing hydraulic pressure of the disengaging hydraulic pressure chamber from exceeding a given set pressure. The second surface has a larger area for receiving hydraulic pressure than an area of the first surface for receiving hydraulic pressure. The method includes changing the given set pressure according to information regarding a state of the automatic transmission.

Abstract: A method of controlling an automatic transmission is provided. The automatic transmission includes a piston having first and second surfaces opposite from each other, friction plates, engaging and disengaging hydraulic pressure chambers for supplying hydraulic pressure and directing the piston to push the friction plates to be engaged and disengaged, a hydraulic pressure control valve for supplying and discharging hydraulic pressure to and from the chambers, and first and second oil paths communicating the valve with the chambers. The second surface has a larger area for receiving hydraulic pressure than that of the first surface. The method includes controlling the friction plates to change from the disengaged state to the engaged state. Controlling the friction plates includes adjusting the hydraulic pressure to a first instruction pressure in a first period in response to a gear shift command, and to a second instruction pressure in a second period.

Abstract: A method of controlling an automatic transmission mounted on a vehicle having an automatic engine stop mechanism for automatically stopping and restarting an engine, is provided. The transmission includes a piston having first and second surfaces, friction plates, engaging and disengaging hydraulic pressure chambers, a hydraulic pressure control valve for supplying/discharging hydraulic pressure to/from the chambers, first and second oil paths communicating the control valve with the chambers, a pressure reducing valve for preventing pressure of the disengaging chamber from exceeding a given set pressure, a hydraulic pressure supply device for supplying pressure to the control valve in the automatic stop state, and a mechanical oil pump for supplying pressure to the control valve while the engine is driving, the second surface having a larger pressure receiving area than the first surface. The method includes adjusting the set pressure to be lower in the automatic stop state than while driving.

Abstract: A method of controlling an automatic transmission is provided. The automatic transmission includes first and second frictional engageable elements and a hydraulic mechanism. The method includes controlling a first hydraulic pressure control valve of the first element to adjust hydraulic pressure to a given value in a first period in response to the gear shift command and increase the hydraulic pressure until first friction plates engaged in a second period, and a second hydraulic pressure control valve of the second element to pre-charge in response to the gear shift command, maintain the hydraulic pressure at a lower value than a highest target value immediately after the pre-charging, and increase the hydraulic pressure until second friction plates engaged immediately after the maintaining the pressure, a time length of the first period being shorter than a time length between a start of the pre-charging and a start of the increasing the pressure.

Abstract: A method of controlling an automatic transmission is provided. The automatic transmission includes a piston having first and second surfaces opposite from each other, friction plates, engaging and disengaging hydraulic pressure chambers for supplying/discharging hydraulic pressure and directing the piston to push the friction plates to be engaged and disengaged, a hydraulic pressure control valve for supplying/discharging hydraulic pressure to/from the chambers, and first and second oil paths communicating the valve with the chambers. The second surface has a larger area for receiving hydraulic pressure than the first surface. The method includes controlling the disengaged friction plates to be engaged by adjusting the hydraulic pressure to a first pressure in a first period in response to a gear shift command and adjusting the hydraulic pressure to a second pressure in a second period. The first pressure is changed depending on a state of the automatic transmission.

Abstract: A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

Abstract: An evaporation mask includes: a mask body including a pattern region configured of a plurality of passage holes; and an adjusting frame configured to hold the mask body and having a mechanism capable of adjusting positions of the passage holes on the mask body. The adjusting frame has a frame-like base material, and a movable member that is provided along one or more sides of the base material to be bonded with an outer edge of the mask body, and at least a part of which is deformable on the base material. One or a plurality of slits are provided at a selective region of the movable member.

Abstract: Resistance of a semiconductor channel in three-dimensional memory stack structures can be reduced by forming a metal-semiconductor alloy region between a vertical semiconductor channel and a horizontal semiconductor channel located within a substrate. The metal-semiconductor alloy region can be formed by recessing a portion of the semiconductor material layer in the semiconductor substrate underneath a memory opening after formation of a memory film, selectively depositing a metallic material in the recess region, depositing a vertical semiconductor channel, and reacting the deposited metallic material with an adjacent portion of the semiconductor material layer and the vertical semiconductor channel. A sacrificial dielectric material layer can be formed on the memory film prior to the selective deposition of the metallic material.

Abstract: A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

Abstract: Resistance of a semiconductor channel in three-dimensional memory stack structures can be reduced by forming a metal-semiconductor alloy region between a vertical semiconductor channel and a horizontal semiconductor channel located within a substrate. The metal-semiconductor alloy region can be formed by recessing a portion of the semiconductor material layer in the semiconductor substrate underneath a memory opening after formation of a memory film, selectively depositing a metallic material in the recess region, depositing a vertical semiconductor channel, and reacting the deposited metallic material with an adjacent portion of the semiconductor material layer and the vertical semiconductor channel. A sacrificial dielectric material layer can be formed on the memory film prior to the selective deposition of the metallic material.

Abstract: A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

Abstract: A method for manufacturing a semiconductor device includes: forming a temporary gate electrode and a first dummy gate electrode located on a first side of the temporary gate electrode, on a semiconductor region with a first lattice constant; forming a first semiconductor layer with a second lattice constant different from the first lattice constant, between the temporary gate electrode and the first dummy gate electrode; removing the temporary gate electrode while leaving the first dummy gate electrode intact; and forming a gate electrode in a region from which the temporary gate electrode is removed.

Abstract: A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

Abstract: A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

Abstract: A method comprises a pre-charge step of pre-charging operating oil; a holding step of holding an operating pressure at an oil pressure less than an oil pressure during the pre-charge, for a given period of time; and a raising step of raising the operating pressure to cause an engagement-side friction element to be engaged. The method further comprises a setting step of setting a pre-charge period in the pre-charge step. The setting step includes predicting a timing at which the engagement-side friction element is to be engaged; actually measuring a timing at which the engagement-side friction element has been actually engaged; and setting the period of the pre-charge step to allow a difference between the timings to become smaller.