Abstract: A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.

Abstract: A solid-state image pickup apparatus includes a substrate, a wiring layer, and a waveguide. The substrate is provided with a pixel array portion constituted of a plurality of pixels each having a photoelectric converter that converts incident light into an electrical signal. The wiring layer includes a plurality of wirings and an insulating layer that covers the plurality of wirings that are laminated above the substrate. The waveguide guides light to each of the photoelectric converters of the plurality of pixels, the waveguide being formed in the wiring layer. The waveguide is formed to have a waveguide exit end from which light exits the waveguide so that a distance between the waveguide exit end and a surface of the photoelectric converter that receives light from the waveguide become shorter, as wavelengths of light guided by the waveguide are longer.

Abstract: A solid-state image pickup apparatus includes a substrate, a wiring layer, and a waveguide. The substrate is provided with a pixel array portion constituted of a plurality of pixels each having a photoelectric converter that converts incident light into an electrical signal. The wiring layer includes a plurality of wirings and an insulating layer that covers the plurality of wirings that are laminated above the substrate. The waveguide guides light to each of the photoelectric converters of the plurality of pixels, the waveguide being formed in the wiring layer. The waveguide is formed to have a waveguide exit end from which light exits the waveguide so that a distance between the waveguide exit end and a surface of the photoelectric converter that receives light from the waveguide become shorter, as wavelengths of light guided by the waveguide are longer.

Abstract: A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.

Abstract: Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch ?1 is equal to the number of switching of the second switch ?2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.

Abstract: The stable temporarily locked state of a housing and a rear holder is kept. When the rear holder is positioned at its temporarily locked position, the front claw of the locking part for temporary locking of the rear holder slips under the locking piece for temporary locking of the housing, and holds the locking piece in cooperation with the rear claw. The temporarily locked state cannot be easily lost.

Abstract: A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG. The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.

Abstract: Disclosed is a solid-state image pickup apparatus including a plurality of pixels. The plurality of pixels each including a lens, a photoelectric converter to convert incident light that passes through the lens into an electrical signal, and a waveguide provided between the lens and the photoelectric converter. The waveguide is disposed so that a center of at least a part of the waveguide on a light exit side is shifted from a main light beam that passes a center of the lens in a direction in which an area where an end portion of the waveguide on the light exit side is overlapped with the photoelectric converter is increased.

Abstract: A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.

Abstract: A nitride semiconductor laser device includes a first semiconductor layer, an active layer, a second semiconductor layer having a ridge portion and a planar portion, a first electrode formed above the ridge portion, and a dielectric film formed on the side wall portion of the ridge portion. A region from a front end face to a predetermined position P is a region A. A region from the predetermined position P to the rear end face is a region B. A thickness of the part of the ridge portion exposed from the dielectric film in the region A is greater than a thickness of the part of the ridge portion exposed from the dielectric film in the region B, and the first electrode is in contact with the ridge portion at least in the region A.

Abstract: A semiconductor laser device of the present invention includes: a substrate; a cladding layer of a first conductivity type formed above one of surfaces of the substrate; an active layer formed above the cladding layer of the first conductivity type; a cladding layer of a second conductivity type formed above the active layer, and having a ridge and a planar portion; a dielectric film formed on a lower portion of a side surface of the ridge and on the planar portion; a first electrode formed on an other one of the surfaces of the substrate; a second electrode formed above the ridge; a third electrode formed over the second electrode and the dielectric film to cover the ridge and the planar portion; and a cavity provided between the third electrode and at least a part of the side surface of the ridge.

Abstract: An optical space transmission device includes: a first portion; and a second portion which is rotatably connected to the first portion and performs space transmission of signals using light between the first portion and the second portion. The device includes: a first light emitting and receiving module which is provided for the first portion and includes: a first light emitting element composed of a light emitting diode emitting first signal light modulated based on a signal transmitted from the first to second portion; and a first light receiving element receiving second signal light modulated based on a signal transmitted from the second to first portions; and a second light emitting and receiving module which is provided for the second portion and includes: a second light emitting element composed of a semiconductor laser emitting the second signal light; and a second light receiving element receiving the first signal light.

Abstract: Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.

Abstract: A solid-state image pickup apparatus includes a substrate, a wiring layer, and a waveguide. The substrate is provided with a pixel array portion constituted of a plurality of pixels each having a photoelectric converter that converts incident light into an electrical signal. The wiring layer includes a plurality of wirings and an insulating layer that covers the plurality of wirings that are laminated above the substrate. The waveguide guides light to each of the photoelectric converters of the plurality of pixels, the waveguide being formed in the wiring layer. The waveguide is formed to have a waveguide exit end from which light exits the waveguide so that a distance between the waveguide exit end and a surface of the photoelectric converter that receives light from the waveguide become shorter, as wavelengths of light guided by the waveguide are longer.

Abstract: Disclosed is a solid-state image pickup apparatus including a plurality of pixels. The plurality of pixels each including a lens, a photoelectric converter to convert incident light that passes through the lens into an electrical signal, and a waveguide provided between the lens and the photoelectric converter. The waveguide is disposed so that a center of at least a part of the waveguide on a light exit side is shifted from a main light beam that passes a center of the lens in a direction in which an area where an end portion of the waveguide on the light exit side is overlapped with the photoelectric converter is increased.

Abstract: The stable temporarily locked state of a housing and a rear holder is kept. When the rear holder (12) is positioned at its temporarily locked position, the front claw (45) of the locking part (44) for temporary locking of the rear holder (12) slips under the locking piece (24) for temporary locking of the housing (11), and holds the locking piece (24) in cooperation with the rear claw (46). The temporarily locked state cannot be easily lost.

Abstract: A photo coupler includes a semiconductor laser, a semiconductor light-receiver, a resin protector, a reflective film, a light pipe, and electrodes. The light pipe is made of resin, has a rectangular parallelepiped shape, and is provided so as to surround an outer circumferential portion of the semiconductor light-receiver. On a center portion of an upper surface of the light pipe, a recessed portion shaped in a frustum of quadrangular pyramid tapered toward the semiconductor light-receiver is formed. The reflective film is shaped in a frustum surface of pyramid tapered toward the semiconductor light-receiver, and is formed on side surfaces of the recessed portion.

Abstract: An optical space transmission device includes: a first portion; and a second portion which is rotatably connected to the first portion and performs space transmission of signals using light between the first portion and the second portion. The device includes: a first light emitting and receiving module which is provided for the first portion and includes: a first light emitting element composed of a light emitting diode emitting first signal light modulated based on a signal transmitted from the first to second portion; and a first light receiving element receiving second signal light modulated based on a signal transmitted from the second to first portions; and a second light emitting and receiving module which is provided for the second portion and includes: a second light emitting element composed of a semiconductor laser emitting the second signal light; and a second light receiving element receiving the first signal light.

Abstract: An inventive optical communication module includes a substrate, a light receiving element disposed on one surface of the substrate for receiving light emitted from a transmission-side optical communication module, a block-shaped resin package which seals the one surface of the substrate and the light receiving element, and a lens disposed on a light incidence surface of the resin package opposite from a surface of the resin package contacting the substrate for converging the light emitted from the transmission-side optical communication module on the light receiving element. The resin package has a groove provided in a side face thereof intersecting the light incidence surface thereof.

Abstract: This invention solves this problem by including an optical transmitter module and optical receiver module inside the connector so as to carry out spatial optical transmitting of optical signal obtained by conversion with the optical transmitter module for optical transmitting between the optical transmitter module and the optical receiver module opposing each other across space.