Patents by Inventor Tomoji Oishi

Tomoji Oishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5712024
    Abstract: An anti-reflection film is in the form of a laminated film composed of an uppermost film layer containing coloring matter having an absorbing peak in a region near the infrared region of 700 nm-900 nm, or coloring matter having an absorbing peak in a region of 600 nm-700 nm, or both of the above coloring matter, and the next film layer to the uppermost layer containing coloring matter having an absorbing peak in a region of 500 nm-600 nm. The anti-reflection film utilizes a variation of the refractive indexes based on abnormal refractive index dispersion by the films containing the coloring matter.
    Type: Grant
    Filed: March 6, 1996
    Date of Patent: January 27, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Sachiko Okuzaki, Tomoji Oishi, Takao Ishikawa, Daigoro Kamoto, Ken Takahashi, Masahiro Nishizawa, Norikazu Uchiyama
  • Patent number: 5643642
    Abstract: A method of treating a metal alkoxide solution to form metal oxide prepolymer molecules therein is characterized by irradiating the solution with light energy having a wavelength selected to break the metal-alkoxy group bond in said metal alkoxide, thereby to form the metal oxide prepolymer molecules in the solution. The prepolymer is converted into polymeric metal oxide gel. The stoichiometry of the oxide is high. A gel of carbon content below 4 atomic % can be achieved by the step of decarbonizing the gel, preferably using light to produce ozone.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: July 1, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Tomoji Oishi, Ken Takahashi, Teteuo Nakazawa, Shigeru Tanaka, Tadahiko Miyoshi
  • Patent number: 5501883
    Abstract: A material for use as a transparent conductive film contains tin oxide to which antimony is added, an oxide of at least one metal of Group VIII except for Fe, Co and Ni, and an organic solvent. The transparent conductive film has good characteristics for use as a transparent electrode for liquid crystal display devices and as an antistatic film on the display surface of Braun tubes.
    Type: Grant
    Filed: July 27, 1994
    Date of Patent: March 26, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Takao Ishikawa, Tomoji Oishi, Sachiko Maekawa
  • Patent number: 5460877
    Abstract: A method of treating a metal alkoxide solution to form metal oxide prepolymer molecules therein is characterized by irradiating the solution with light energy having a wavelength selected to break the metal-alkoxy group bond in said metal alkoxide, thereby to form the metal oxide prepolymer molecules in the solution. The prepolymer is converted into polymeric metal oxide gel. The stoichiometry of the oxide is high. A gel of carbon content below 4 atomic % can be achieved by the step of decarbonizing the gel, preferably using light to produce ozone.
    Type: Grant
    Filed: April 18, 1994
    Date of Patent: October 24, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Tomoji Oishi, Ken Takahashi, Tetsuo Nakazawa, Shigeru Tanaka, Tadahiko Miyoshi
  • Patent number: 5449948
    Abstract: Integrated circuit devices, chips and methods of making and operating them are disclosed. The devices are specially adapted for high frequency operation e.g. at or above 1 GHz. Inductive noise caused by switching at these frequencies--and which can interfere with switching--is inhibited by using a large bypass capacitor connected between power and ground connections outside the chip, and a small bypass capacitor connected between the same power and ground connections but formed inside the chip. The smaller capacitor cuts noise attributable to the wiring between the larger capacitor and the chip. The chip can have many of the smaller capacitors, even one or more per gate. In the preferred embodiments, the small capacitors from power and ground bonding pads are formed at the front surface of the chip substrate. Tantalum pentoxide, and other suitable dielectrics having relative dielectric constant of 10 or more at 1 GHz, are used to form the capacitors.
    Type: Grant
    Filed: April 1, 1991
    Date of Patent: September 12, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Hirokazu Inoue, Tomoji Oishi, Hiroichi Shinohara, Ken Takahashi, Tetsuo Nakazawa, Mitsuo Usami, Masaki Fukuoka
  • Patent number: 5449534
    Abstract: An anti-reflection film is produced on the panel surface of a cathode-ray tube by:(A) preparing a solution for forming an anti-reflection film, which contains water and a metal alkoxide having the formula,M(OR).sub.nwherein M is a metal selected from the group consisting of Si, Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different,(B) coating the solution for forming an anti-reflection film on the outermost surface of the panel of a cathode-ray tube, and(C) applying an ultraviolet light to the solution for forming an anti-reflection film coated on said surface to cure the solution to form a transparent film with fine roughness.
    Type: Grant
    Filed: September 9, 1992
    Date of Patent: September 12, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Tomoji Oishi, Sachiko Maekawa, Akira Kato, Masahiro Nishizawa, Yoshifumi Tomita, Kojiro Okude, Kenji Tochigi, Yutaka Misawa
  • Patent number: 5234556
    Abstract: A method of treating a metal alkoxide solution to form metal oxide prepolymer molecules therein is characterized by irradiating the solution with light energy having a wavelength selected to break the metal-alkoxy group bond in said metal alkoxide, thereby to form the metal oxide prepolymer molecules in the solution. The prepolymer is converted into polymeric metal oxide gel. The stoichiometry of the oxide is high. A gel of carbon content below 4 atomic % can be achieved by the step of decarbonizing the gel, preferably using light to produce ozone.
    Type: Grant
    Filed: August 20, 1990
    Date of Patent: August 10, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Tomoji Oishi, Ken Takahashi, Tetsuo Nakazawa, Shigeru Tanaka, Tadahiko Miyoshi
  • Patent number: 4729010
    Abstract: An integrated circuit package in which semiconductor elements mounted on an insulating substrate, ends of lead pieces introduced from the outside and wires that electrically connect them, are accommodated in a cell that is air-tightly defined by the substrate, a cap and a sealing glass. The lead pieces are composed of an alloy having a coefficient of thermal expansion nearly equal to, or smaller than, the coefficient of thermal expansion of the substrate. The alloy is an iron alloy which contains nickel and cobalt, and having a martensite transformation temperture of lower than -55.degree. C.
    Type: Grant
    Filed: July 30, 1986
    Date of Patent: March 1, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Masatoshi Tsuchiya, Satoru Ogihara, Hiromi Kagohara, Kanji Otsuka, Tomoji Oishi