Patents by Inventor Tomokazu Matsuzaki

Tomokazu Matsuzaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing the same that includes a dual oxidation
    Patent number: 6495431
    Abstract: A first field oxidation is performed by masking an element-isolating region formation-expected region on a substrate by a first oxidation preventing film (silicon nitride film) having therein a first opening to thereby form a first field oxide film, which is then masked by a second oxidation preventing film (silicon nitride film) having a second opening with a smaller width dimension than the first opening in a second field oxidation to thereby locally form a second field oxide film at the middle of the first field oxide film.
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: December 17, 2002
    Assignee: NEC Corporation
    Inventor: Tomokazu Matsuzaki
  • Semiconductor device and method for manufacturing the same
    Publication number: 20020053713
    Abstract: A first field oxidation is performed by masking an element-isolating region formation-expected region on a substrate by a first oxidation preventing film (silicon nitride film) having therein a first opening to thereby form a first field oxide film, which is then masked by a second oxidation preventing film (silicon nitride film) having a second opening with a smaller width dimension than the first opening in a second field oxidation to thereby locally form a second field oxide film at the middle of the first field oxide film.
    Type: Application
    Filed: August 2, 2001
    Publication date: May 9, 2002
    Inventor: Tomokazu Matsuzaki