Abstract: A method for manufacturing a non-circular wound magnetic core composed of a nano-crystallized soft magnetic alloy thin strip comprises: a step for acquiring a multilayer body by winding a soft magnetic alloy thin strip; a step for nano-crystallizing the soft magnetic alloy thin strip by inserting a heat treatment inner peripheral jig to the inner peripheral side of the multilayer body, maintaining the multilayer body in a non-circular shape, and subjecting the multilayer body to a heat treatment; and a step for maintaining the nano-crystallized multilayer body in the non-circular shape by using outer and inner peripheral jigs and impregnating resin between the layers of the multilayer body. The resin impregnation inner and outer peripheral jigs are shaped so as to not contact the inner peripheral surface and/or the outer peripheral surface of the multilayer body at a part where the multilayer body has a large degree of curvature.

Abstract: Provided is a distance measurement apparatus including: a light projector that projects reference pulsed light to an object region; a light receiver that receives reflected pulsed light from the object region; a scanning unit including a plurality of movable mirrors provided between the light projector and the object region and synchronously operated; and a calculation unit that calculates a distance to the object region on the basis of a difference between light projection timing of projecting the reference pulsed light and light receiving timing of receiving the reflected pulsed light.

Abstract: [Object] To provide an optical element and a display apparatus capable of reducing a waveguide loss and achieving laser oscillation suppression and a high output. [Solving Means] An optical element according to the present technology includes a substrate, a first end which is a light emission end, and a second end provided on an opposite side to the first end, the optical element including a first electrode layer, a first semiconductor layer, a second semiconductor layer, an active layer, and a second electrode layer. The first electrode layer has a stripe form extended from the second end toward the first end. A waveguide structure included in the first conductivity type layer, the active layer, and second conductivity type layer includes a first waveguide and a second waveguide, and the second waveguide has a tapered structure that makes a beam spot of light incident from the first waveguide smaller.

Abstract: A movable body according to an embodiment of the present disclosure includes a vehicle body and an information display apparatus mounted on the vehicle body. The information display apparatus provided at the movable body includes a light projecting part that projects a luminous flux and a reflector that reflects the luminous flux from the light projecting part. The reflector includes a plurality of unit regions two-dimensionally arranged over a main surface. Each of the unit regions includes a plurality of reflecting surfaces two-dimensionally arranged, and splits a luminous flux entering the plurality of reflecting surfaces to perform reflection in a plurality of directions.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part. The semiconductor laser includes an electrode provided over the bottom surface of each separation groove with an insulating layer being interposed therebetween.

Abstract: A light source module according to an embodiment of the present disclosure includes: a radiator; a plurality of light-emitting elements disposed on the radiator; a plurality of lenses that each convert a light beam outputted from corresponding one of the plurality of light-emitting elements into a collimated light beam and output the collimated light beam; a plurality of first optical elements that each reflect the collimated light beam outputted from corresponding one of the plurality of lenses while adjusting an optical axis direction of the collimated light beam; and a second optical element that multiplexes respective light beams reflected from the plurality of first optical elements.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: A distance measurement apparatus including at least one measurement unit, in which the measurement unit includes: a voltage level converter that applies an arbitrary bias to a voltage obtained on the basis of an output from a light receiver to offset a level of the voltage; an amplifier that amplifies a voltage output from the voltage level converter; and a measurement section that measures a timing at which an output from the amplifier reaches a predetermined threshold.

Abstract: A ranging device provided with a light projecting unit for projecting a reference pulse set row including a main pulse and at least one sub pulse, a light receiving unit for receiving a reflected pulse set row obtained by reflection of the reference pulse set row by an object to be measured, an identifying unit for identifying the reflected pulse set row corresponding to the reference pulse set row, and a calculating unit for calculating a distance to the object to be measured on the basis of a delay time difference between the reference pulse set row and the reflected pulse set row corresponding to the reference pulse set row, in which the light projecting unit is configured to project a plurality of reference pulse set rows having different pulse intervals.

Abstract: [Object] To provide a light-emitting device and a display apparatus that high-output can be achieved without enlarging a light confinement width, i.e., without enlarging a beam spot size. [Solving Means] A light-emitting device includes a first electrode layer, a first conduction type layer, a second conduction type layer, an active layer, and second electrode layer. The first conduction type layer includes a current injection region formed by the first electrode layer and a current non-injection region. A waveguide structure included in the first conduction type layer, the active layer, and the second conduction type layer includes a first region and a second region. The first region has a first waveguide that is the current injection region and the current non-injection region and has a first refractive index difference.

Abstract: Provided is a correction device including: a photon number counting unit that counts a photon number on the basis of an output signal output from a light receiving unit; a correction value acquiring unit that acquires a correction value corresponding to the photon number; and a correction unit that performs correction based on the correction value.

Abstract: A distance measurement apparatus includes at least one measurement unit. The measurement unit includes a first light reception section including a plurality of photon counting type light reception devices connected to each other, a first conversion section configured to convert current outputted from the first light reception section into a voltage, a first amplification section configured to output an amplification value obtained by amplifying the voltage outputted from the first conversion section and output, when the amplification value exceeds a given limit value, the limit value as the amplification value, and a first measurement section configured to measure a timing at which the output value from the first amplification section reaches a given threshold value.

Abstract: An optical system is provided including a light source configured to emit a light; and a polarizing splitting multiplexing device including a first prism configured to split the light into two polarized light beams having different optical path lengths, and a second prism configured to combine the two polarized light beams. The first prism includes a first reflective surface and a first polarization splitting surface facing the first reflective surface, and the second prism includes a second reflective surface and a second polarization splitting surface facing the second reflective surface.

Abstract: A light-emitting element includes a light-emitting region which is made from a stacked structure configured from a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, and a light propagation region which is made from the stacked structure, extends from the light-emitting region, and has a light-emitting end surface. The light-emitting region is configured from a ridge stripe structure and ridge stripe adjacent portions positioned at both sides of the ridge stripe structure, and when a thickness of the second compound semiconductor layer in the ridge stripe adjacent portions is set to d1, a thickness of the second compound semiconductor layer in the light propagation region is set to d2, and a thickness of the second compound semiconductor layer in the ridge stripe structure is set to d3, d3>d2>d1 is satisfied.

Abstract: An optical system is provided including a light source configured to emit a light; and a polarizing splitting multiplexing device including a first prism configured to split the light into two polarized light beams having different optical path lengths, and a second prism configured to combine the two polarized light beams. The first prism includes a first reflective surface and a first polarization splitting surface facing the first reflective surface, and the second prism includes a second reflective surface and a second polarization splitting surface facing the second reflective surface.

Abstract: Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.

Abstract: A light-emitting element includes a light-emitting region which is made from a stacked structure configured from a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, and a light propagation region which is made from the stacked structure, extends from the light-emitting region, and has a light-emitting end surface. The light-emitting region is configured from a ridge stripe structure and ridge stripe adjacent portions positioned at both sides of the ridge stripe structure, and when a thickness of the second compound semiconductor layer in the ridge stripe adjacent portions is set to d1, a thickness of the second compound semiconductor layer in the light propagation region is set to d2, and a thickness of the second compound semiconductor layer in the ridge stripe structure is set to d3, d3>d2>d1 is satisfied.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: An illumination optical system includes a two-dimensional laser-array light source including a plurality of laser light sources arranged in a two-dimensional array on a plane; an integrator optical system configured to superpose incident light and emit the light to an irradiated surface; a plurality of first lenses disposed parallel to the plane and configured to superpose beams from the two-dimensional laser-array light source in a first axis direction and emit the beams to the integrator optical system while limiting a divergence angle in the first axis direction of the two-dimensional array; and a plurality of second lenses disposed rearward of the first lenses and configured to superpose the beams from the two-dimensional laser-array light source in a second axis direction orthogonal to the first axis direction and emit the beams to the integrator optical system while limiting a divergence angle in the second axis direction.

Abstract: A semiconductor laser positioning member includes: a base section having a through hole into which a semiconductor laser is to be inserted, the semiconductor laser being configured to be disposed in a terminal insertion hole and having a pair of engagement recesses, the terminal insertion hole being formed in a holder; and a pair of plate spring sections projecting from an opening edge of the through hole, the plate spring sections being opposed to each other. The plate spring sections are each formed in a symmetrical shape in a circumferential direction of the through hole, the base section is overlapped with the holder when the semiconductor laser is inserted into the through hole, and the plate spring sections are engaged with the respective engagement recesses, and are each elastically deformable in an optical axis direction of the semiconductor laser when the semiconductor laser is inserted into the through hole.