Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A laser diode array includes: a heat dissipator; a plurality of submounts disposed independently of one another on the heat dissipator; and a plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another.

Abstract: An illumination optical system includes a two-dimensional laser-array light source including a plurality of laser light sources arranged in a two-dimensional array on a plane; an integrator optical system configured to superpose incident light and emit the light to an irradiated surface; a plurality of first lenses disposed parallel to the plane and configured to superpose beams from the two-dimensional laser-array light source in a first axis direction and emit the beams to the integrator optical system while limiting a divergence angle in the first axis direction of the two-dimensional array; and a plurality of second lenses disposed rearward of the first lenses and configured to superpose the beams from the two-dimensional laser-array light source in a second axis direction orthogonal to the first axis direction and emit the beams to the integrator optical system while limiting a divergence angle in the second axis direction.

Abstract: A surface plasmon-generating apparatus includes an active layer including an n-type region formed on one side and a p-type region formed on the other side, the n-type region and the p-type region being in contact with each other to form a pn junction therebetween; a first barrier layer in contact with a first surface of the active layer; a second barrier layer in contact with a second surface of the active layer, the second surface being opposite the first surface; and a metal body disposed above the pn junction of the active layer with the second barrier layer and an insulating layer therebetween.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A magnetic sensing section is constituted by a magneto-resistive device in which a fixed magnetization layer, a non-magnetic layer, and a magnetization-free layer are deposited in that order on a first buffer layer that is deposited on a magnetic layer. A second buffer layer sandwiches the magnetic sensing section, and a biasing layer which covers right and left sides of the magnetic sensing section. The second buffer layer is deposited on the magnetic layer with a nonconductor layer interposed therebetween. A near field light generation section constituted by a second magnetic layer, a dielectric layer, and a metal layer is formed on a surface of the second buffer layer not adjacent to the nonconductor layer. The resultant magnetic sensor device can efficiently perform photo-assisted reproduction of information from a magnetic recording medium using a magnetic reproduction head or a magnetic reproducer.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: This invention provides a surface plasmon polariton direction change device (1) for changing a propagation direction of a surface plasmon polariton (5). The surface plasmon polariton direction change device (1) includes a metal film support member (2), and a first metal film (3) and a second metal film (4) which are provided on a predetermined surface of the metal film support member (2), are provided adjacently to each other, and are different from each other in effective refractive index.

Abstract: An opening (3) is formed on a surface of a metal film (2), a plurality of axes (4, 5, 6, 7) cross each other substantially perpendicularly at the opening (3), a plurality of periodic grooves (8, 9, 10, 11) are provided for respective axes (4, 5, 6, 7), and each of the periodic grooves (8, 9, 10, 11) includes a plurality of grooves (8-n, 9-n, 10-n, and 11-n) substantially perpendicular to the axis for which each periodic groove is provided, and the periodic grooves (8, 9, 10, 11) is positioned point-symmetrically with respect to the opening (3).

Abstract: Disclosed is a small-sized two-axis magnetic field sensor having a function to cause a magnetic field canceling an external offset magnetic field. The two-axis magnetic field sensor contains a plane coil disposed on a plane and four sets of magneto-resistance element pairs on a plane parallel to the plane coil. The plane coil includes at least two pairs of parallel conductors, and two magneto-resistance elements cross only a single conductor of the coil. A current for canceling the external offset magnetic field is determined in advance, and while a DC current that causes total magnetic fields of biasing magnetic fields plus a magnetic field for canceling the external offset magnetic field flows through the coil, intermediate potential outputs from the magneto-resistance element pairs are detected to measure a magnetic field direction, such as geo-magnetism.

Abstract: Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A surface plasmon-generating apparatus includes an active layer including an n-type region formed on one side and a p-type region formed on the other side, the n-type region and the p-type region being in contact with each other to form a pn junction therebetween; a first barrier layer in contact with a first surface of the active layer; a second barrier layer in contact with a second surface of the active layer, the second surface being opposite the first surface; and a metal body disposed above the pn junction of the active layer with the second barrier layer and an insulating layer therebetween.

Abstract: This invention provides a surface plasmon polariton direction change device (1) for changing a propagation direction of a surface plasmon polariton (5). The surface plasmon polariton direction change device (1) includes a metal film support member (2), and a first metal film (3) and a second metal film (4) which are provided on a predetermined surface of the metal film support member (2), are provided adjacently to each other, and are different from each other in effective refractive index.

Abstract: An opening (3) is formed on a surface of a metal film (2), a plurality of axes (4, 5, 6, 7) cross each other substantially perpendicularly at the opening (3), a plurality of periodic grooves (8, 9, 10, 11) are provided for respective axes (4, 5, 6, 7), and each of the periodic grooves (8, 9, 10, 11) includes a plurality of grooves (8-n, 9-n, 10-n, and 11-n) substantially perpendicular to the axis for which each periodic groove is provided, and the periodic grooves (8, 9, 10, 11) is positioned point-symmetrically with respect to the opening (3).

Abstract: There are provided a magnetic layer 2, a buffer layer 3 deposited on the magnetic layer 2, and a magnetic sensing section 7 constituted by a magneto-resistive device in which a fixed magnetization layer 4, a non-magnetic layer 5, and a magnetization-free layer 6 are deposited on the buffer layer 3 in this order. Further provided are a buffer layer 8 which sandwiches the magnetic sensing section 7 with the buffer layer 3 and a biasing layer 10 which covers the right and left sides of the part constituted by the buffer layer 3, the magnetic sensing section 7, and the buffer layer 8 and which is deposited on the magnetic layer 2 with a nonconductor layer 9 being interposed therebetween. On that surface, a near field light generation section 14 is formed which is constituted by a magnetic layer 11, a dielectric layer 12, and a metal layer 13.

Abstract: Disclosed is a small-sized two-axis magnetic field sensor having a function to cause a magnetic field canceling an external offset magnetic field. The two-axis magnetic field sensor contains a plane coil disposed on a plane and four sets of magneto-resistance element pairs on a plane parallel to the plane coil. The plane coil includes at least two pairs of parallel conductors, and two magneto-resistance elements cross only a single conductor of the coil. A current for canceling the external offset magnetic field is determined in advance, and while a DC current that causes total magnetic fields of biasing magnetic fields plus a magnetic field for canceling the external offset magnetic field flows through the coil, intermediate potential outputs from the magneto-resistance element pairs are detected to measure a magnetic field direction, such as geo-magnetism.

Abstract: A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.