Abstract: A light receiving region 21 and a floating diffusion region 22 are formed apart from each other in a semiconductor substrate 20 (S11), translucent adhesive 31 is applied to an area corresponding to the light receiving region 21 on the semiconductor substrate 20 (S22), and a translucent plate 30 is attached to the semiconductor substrate 20 on which the translucent adhesive 31 has been applied (S23). In this semiconductor manufacturing process, before the translucent adhesive 31 is applied, a dam member 24 is formed on the semiconductor substrate 20 so as to prevent the translucent adhesive 31 from flowing into an area corresponding to the floating diffusion region 22 on the semiconductor substrate 20 (S18).

Abstract: A solid state imaging element including light receiving elements and microlenses is placed in a recess of a ceramic package. A black resin fills space between the ceramic package and the solid state imaging element.

Abstract: A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.

Abstract: A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.

Abstract: Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image noise in case of adopting a spincoating method in applying a material of the reflection prevention coating onto microlenses of the solid-state imaging device. In the solid-state imaging device 1 according to the present invention, a barrier wall pattern 7 is formed, as a step alleviating structure, in dicing areas 5X formed between adjacent imaging areas 9. The barrier wall pattern 7 has a rectangular sectional form. With use of the barrier wall pattern 7 in the spincoating method, reflection prevention coating 8 is coated onto the microlenses 6 more evenly than in conventional cases.

Abstract: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Abstract: A solid state imaging device of the present invention comprises: a semiconductor substrate; a plurality of light receiving elements arranged in a matrix configuration on the semiconductor substrate; a plurality of color filter segments provided above the light receiving elements; and a light collector provided above the color filter segments for collecting light on the light receiving elements. The color filter segments are mutually separated by interstices. The interstices contain a gas.

Abstract: Color filter materials 5 to 7 include a dye which has a light sensing function. The curing reaction may be one of radical polymerization, cationic polymerization, and anionic polymerization. The manufacturing method of color filters 15 to 17 includes processes: coat-forming, on the base, color filter material layers 5 to 7 including a dye which has a light sensing function; exposing a predetermined area on the color filter material layers 5 to 7; and removing color filter material layers 5 to 7 outside the predetermined area by a developer and forming color filters 15 to 17 on a predetermined area.

Abstract: A color filter manufacturing method of the present invention including: applying a negative type dye color photoresist; applying an oxygen permeation prevention film on the negative type dye color photoresist; exposing a predetermined part of the oxygen permeation prevention film from above; and forming, on the predetermined part, a color filter made from the negative type dye color photoresist by removing, using a developer, at least a part of the negative type dye color photoresist formed outside the predetermined part and permeation prevention film.

Abstract: In a lens array, a multiplicity of condenser lenses, each in a convex lens form, are arrayed in vertical and horizontal directions so as to correspond to pixel regions, respectively, and each condenser lens, when viewed from a direction perpendicular to a condenser lens-arrayed plane, takes a planar shape formed with a four straight sides along four sides of the pixel region and four circular arcs extending between the respective straight sides. A center of the four circular arcs substantially coincides with a center of the corresponding pixel region. This ensures an increase in area covered with the condenser lens in the pixel region, thereby causing more light rays to enter the condenser lens. In addition, a radius of curvature necessary for collecting can be obtained more easily. Consequently, light rays can be efficiently collected and guided to light receiving sections or the like provided in the pixel regions.

Abstract: In a lens array, a multiplicity of condenser lenses, each in a convex lens form, are arrayed in vertical and horizontal directions so as to correspond to pixel regions, respectively, and each condenser lens, when viewed from a direction perpendicular to a condenser lens-arrayed plane, takes a planar shape formed with a four straight sides along four sides of the pixel region and four circular arcs extending between the respective straight sides. A center of the four circular arcs substantially coincides with a center of the corresponding pixel region. This ensures an increase in area covered with the condenser lens in the pixel region, thereby causing more light rays to enter the condenser lens. In addition, a radius of curvature necessary for collecting can be obtained more easily. Consequently, light rays can be efficiently collected and guided to light receiving sections or the like provided in the pixel regions.