Abstract: Base coat as an example of a resin composition for a cosmetic is a resin composition for a cosmetic used in a cosmetic to be adhered to nail as a part of living body. The resin composition for a cosmetic includes a stimulus-responsive material that undergoes a volume change by external stimuli, the external stimuli excluding both an external stimulus due to contact with a solvent and an external stimulus due to contact with a solution, and a solidified matter of the resin composition for a cosmetic has a surface with a water contact angle between 30° and 110° (inclusive). The solidified matter of the resin composition for a cosmetic undergoes the volume change by application of the external stimuli to reduce strength of adhesion to the part of living body.

Abstract: Provided is a test method with which mild cognitive impairment (MCI) is detectable and a measurement reagent for use in the test method. A test method for MCI according to the present invention includes a step of measuring the activity of superoxide dismutase (SOD) in a biological sample of a subject.

Abstract: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Abstract: A solid state imaging device of the present invention comprises: a semiconductor substrate; a plurality of light receiving elements arranged in a matrix configuration on the semiconductor substrate; a plurality of color filter segments provided above the light receiving elements; and a light collector provided above the color filter segments for collecting light on the light receiving elements. The color filter segments are mutually separated by interstices. The interstices contain a gas.

Abstract: Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image noise in case of adopting a spincoating method in applying a material of the reflection prevention coating onto microlenses of the solid-state imaging device. In the solid-state imaging device 1 according to the present invention, a barrier wall pattern 7 is formed, as a step alleviating structure, in dicing areas 5X formed between adjacent imaging areas 9. The barrier wall pattern 7 has a rectangular sectional form. With use of the barrier wall pattern 7 in the spincoating method, reflection prevention coating 8 is coated onto the microlenses 6 more evenly than in conventional cases.

Abstract: A solid-state image sensing element includes an effective pixel section in a central area of a light receiving surface thereof, and a ridge-shaped protruding portion is provided around the effective pixel section. A liquid transparent adhesive is applied on the effective pixel section, and a light transparent substrate is placed thereon. The light transparent substrate is in contact with the protruding portion, and is therefore prevented from sliding with the liquid adhesive serving as a lubricant. Thus, the light transparent substrate can be fixed at a predetermined position.

Abstract: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Abstract: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Abstract: A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.

Abstract: A solid-state imaging element includes a semiconductor substrate formed with a valid pixel section including a plurality of photodetector sections, spacers formed on the valid pixel section, a transparent adhesive filling gaps among the spacers, and a transparent substrate which is bonded onto the spacers using the transparent adhesive and covers the valid pixel section when viewed in plan. Electrode pad sections are formed in a region of the semiconductor substrate located outside the valid pixel section.

Abstract: Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filters 8a, 8b, and 8c having spectral characteristics, respectively, different from each other are provided so as to correspond to a plurality of light reception sections 2, respectively, aligned on a semiconductor substrate 1. Further, a plurality of microlenses 10 are provided above the plurality of color filters 8a, 8b, and 8c, respectively. A plurality of antireflection films 11a are selectively formed on surfaces of the microlenses 10 provided above color filters 8b each having a predetermined spectral characteristic.

Abstract: A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.

Abstract: An optical device includes a substrate, a plurality of optical elements formed in an element formation region of the substrate, a plurality of lenses formed over the element formation region so as to correspond to the plurality of optical elements, and a protective layer formed so as to cover the plurality of lenses. A holding member is formed on the protective layer in a region outside the element formation region. The holding member holds a bottom surface of a transparent member. A gap between the protective layer and the transparent member is filled with an adhesive.

Abstract: A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.

Abstract: An optical device includes a substrate, a plurality of optical elements formed in an element formation region of the substrate, a plurality of lenses formed over the element formation region so as to correspond to the plurality of optical elements, and a protective layer formed so as to cover the plurality of lenses. A holding member is formed on the protective layer in a region outside the element formation region. The holding member holds a bottom surface of a transparent member. A gap between the protective layer and the transparent member is filled with an adhesive.

Abstract: A pattern (6B) is formed by performing selective exposure and development on a photosensitive resist (6A), and then the pattern (6B) is decolorized by irradiating the pattern with ultraviolet or visible light. Then, a microlens (6) is formed by deforming the shape of the pattern (6B) into a microlens shape by heating. An inequality of h/a?1 is satisfied, where, (h) is the height of the microlens (6), and (2a) is the length of the bottom plane of the microlens (6) in a short side direction when viewed from the upper plane.

Abstract: A semiconductor imaging device includes: a semiconductor imaging element including an imaging region, a peripheral circuit region, and an electrode region, the imaging region including a plurality of micro lenses; a semiconductor package the semiconductor package in which a cavity for mounting the semiconductor imaging element is formed, the semiconductor package including a plurality of internal connection terminals formed inside the periphery of the cavity for being connected with a plurality of electrode terminals of the semiconductor imaging element and a plurality of external connection terminals connected with the internal connection terminals; a fixing member for fixing the semiconductor imaging element to the cavity; and an optical member fixed to the semiconductor package by a sealing member so as to cover the semiconductor imaging element arranged in the cavity. Wherein, a face obtained by connecting vertexes of the micro lenses is formed into a continuous concave curve.

Abstract: A solid-state image sensing element includes an effective pixel section in a central area of a light receiving surface thereof, and a ridge-shaped protruding portion is provided around the effective pixel section. A liquid transparent adhesive is applied on the effective pixel section, and a light transparent substrate is placed thereon. The light transparent substrate is in contact with the protruding portion, and is therefore prevented from sliding with the liquid adhesive serving as a lubricant. Thus, the light transparent substrate can be fixed at a predetermined position.

Abstract: Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filters 8a, 8b, and 8c having spectral characteristics, respectively, different from each other are provided so as to correspond to a plurality of light reception sections 2, respectively, aligned on a semiconductor substrate 1. Further, a plurality of microlenses 10 are provided above the plurality of color filters 8a, 8b, and 8c, respectively. A plurality of antireflection films 11a are selectively formed on surfaces of the microlenses 10 provided above color filters 8b each having a predetermined spectral characteristic.

Abstract: A semiconductor imaging device includes: a semiconductor imaging element including an imaging region, a peripheral circuit region, and an electrode region, the imaging region including a plurality of micro lenses; a semiconductor package the semiconductor package in which a cavity for mounting the semiconductor imaging element is formed, the semiconductor package including a plurality of internal connection terminals formed inside the periphery of the cavity for being connected with a plurality of electrode terminals of the semiconductor imaging element and a plurality of external connection terminals connected with the internal connection terminals; a fixing member for fixing the semiconductor imaging element to the cavity; and an optical member fixed to the semiconductor package by a sealing member so as to cover the semiconductor imaging element arranged in the cavity. Wherein, a face obtained by connecting vertexes of the micro lenses is formed into a continuous concave curve.