Abstract: [Object] To provide a vertical cavity surface emitting laser device that is excellent in producibility and capable of reducing the production cost and a method of producing the vertical cavity surface emitting laser device. [Solving Means] A vertical cavity surface emitting laser device (100) according to the present technology includes: a first reflection mirror (103); a second reflection mirror (109); a first semiconductor layer (104); a second semiconductor layer (106); a tunnel junction layer (107); and a light-emitting layer (105), the vertical cavity surface emitting laser device (100) having a mesa structure (M) that has a current injection region where a current passing through an inner peripheral region and flowing into the light-emitting layer (105) concentrates.

Abstract: [Object] To provide a vertical cavity surface emitting laser element that has excellent producibility and is suitable for high output and a method of producing the vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first DBR; a second BR; an active layer; and a tunnel junction layer. The first DBR reflects light of a specific wavelength. The second DBR reflects light of the wavelength. The active layer is disposed between the first DBR and the second DBR. The tunnel junction layer is disposed between the first DBR and the active layer and forms a tunnel junction.

Abstract: [Object] To provide a vertical cavity surface emitting laser element that has low thermal resistance and is capable of operating at high temperature, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method of producing a vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element (100) according to the present technology includes: a first substrate (110); a second substrate (120); a first DBR layer (131); and a second DBR layer (132). The first substrate (110) is formed of a first material and includes an active layer (115). The second substrate (120) is formed of a second material and is bonded to the first substrate (110), the second material causing light having a specific wavelength to be transmitted therethrough and being different from that of the first substrate (110).

Abstract: [Object] To provide a vertical cavity surface emitting laser element having a structure whose pitch can be narrowed, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method of producing a vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first substrate; and a second substrate. The first substrate is provided with a semiconductor layer including an active layer and a first distributed Bragg reflector (DBR) layer. The second substrate is provided with a constriction layer and a second DBR layer, the constriction layer having a constriction region and an injection region having conductivity higher than that of the constriction region, the second substrate being bonded to the first substrate such that the constriction layer is adjacent to the semiconductor layer.

Abstract: A three-dimensional structure according to an embodiment of the present disclosure includes: a plurality of resin layers including a light curable resin, the light curable resin including a coloring compound, a color developing-reducing agent, and a photothermal conversion agent, the plurality of resin layers being stacked, the color developing-reducing agent having an average particle diameter of 10 ?m or more and 100 ?m or less.

Abstract: A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.

Abstract: An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

Abstract: A nail production system according to an embodiment of the disclosure includes a first correction section and a first conversion section. The first correction section corrects shape data of an existing nail tip or an existing nail sticker on the basis of measurement data of a nail, to thereby generate shape data of an original nail tip or an original nail sticker. The first conversion section converts the shape data of the original nail tip or the original nail sticker that is generated by the first correction section into print data.

Abstract: An optical shaping apparatus includes: a light source unit that outputs collimated light; an optical function unit that is disposed on an optical path of the collimated light and modulates the optical path or a phase of the collimated light; and a control unit that controls operation of the optical function unit, to irradiate a target surface with modulated light produced in the optical function unit.

Abstract: An electronic apparatus according to an embodiment of the technology includes an obtaining section, a determining section, and an instructing section. The obtaining section obtains a first design image or corresponding data corresponding to the first design image. The determining section determines one or a plurality of second design images different from the first design image on the basis of the first design image or the corresponding data obtained by the obtaining section. The instructing section instructs printing of one or both of the one second design image determined by the determining section and a plurality of the second design images determined by the determining section.

Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

Abstract: A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.

Abstract: Provided is an optical shaping apparatus that includes a light source that outputs diffusion light or converging light as outgoing light, an optical function section that is disposed in an optical path of the outgoing light and modulates the optical path or a phase of the outgoing light, and a sensor that acquires positional data of an object surface. The optical shaping apparatus further includes a controller that controls operation of the optical function section on the basis of the positional data and coordinate data of a shaped article, to apply modulated light generated by the optical function section to the object surface.

Abstract: An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

Abstract: A light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric conversion layer common to the plurality of pixels, a first electrode layer provided on side of a light incident surface of the photoelectric conversion layer, and a light-shielding section embedded between the plurality of pixels adjacent to each other of the first electrode layer.

Abstract: A stereolithographic object includes a first curable resin part that is provided at a position suitable for contact with a base member and one or a plurality of second curable resin parts that are provided to be in contact with the first curable resin part and to allow part of a side surface of the first curable resin part to be exposed. The first curable resin part includes resin that has a functional group number and a polymer polymerization degree that are relatively small compared with those of the second curable resin part. The one or the plurality of second curable resin parts includes resin that has a functional group number and a polymer polymerization degree that are relatively great compared with those of the first curable resin part.

Abstract: An electronic apparatus according to an embodiment of the technology includes an obtaining section, a determining section, and an instructing section. The obtaining section obtains a first design image or corresponding data corresponding to the first design image. The determining section determines one or a plurality of second design images different from the first design image on the basis of the first design image or the corresponding data obtained by the obtaining section. The instructing section instructs printing of one or both of the one second design image determined by the determining section and a plurality of the second design images determined by the determining section.

Abstract: An information processing system according to an embodiment of the technology includes: a plurality of first wireless communication units each having an identifier; and a second wireless communication unit that reads out the identifier from each of the plurality of first wireless communication units combined from among the plurality of first wireless communication units. The information processing system further includes an information processing unit that executes processing based on a combination of the plurality of identifiers that are read out by the second wireless communication unit.

Abstract: An imaging device includes a plurality of light-receiving elements arranged in a two-dimensional matrix shape. Each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region between the light-receiving elements. The first electrode and the first compound semiconductor layer are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer near the first electrode is lower than that of a first compound semiconductor layer near the second compound semiconductor layer.

Abstract: A three-dimensional structure according to an embodiment of the present disclosure includes: a plurality of resin layers including a light curable resin, the light curable resin including a coloring compound, a color developing-reducing agent, and a photothermal conversion agent, the plurality of resin layers being stacked, the color developing-reducing agent having an average particle diameter of 10 ?m or more and 100 ?m or less.