Abstract: A battery monitoring apparatus comprises a reception section to receive a radio signal and to output power and a demodulated signal according to the radio signal; a first power source circuit to perform power supply based on the power; a decode circuit to operate upon receiving the power supply from the first power source circuit and to output an activation signal and a command based on the demodulated signal; a second power source circuit to be activated according to the activation signal and to perform power supply; a battery monitoring circuit to operate upon receiving the power supply from the second power source circuit and to output a monitoring result of a state of the battery according to the command; and a transmission section to operate upon receiving the power supply from the second power source circuit and to wirelessly transmit the monitoring result.

Abstract: A battery system monitoring device that monitors a battery system provided with a cell group having a plurality of battery cells connected in series with each other, including: a first control device that monitors and controls states of the plurality of battery cells of the cell group; a second control device that controls the first control device; a temperature detection unit that measures a temperature in the vicinity of the first control device; and a plurality of voltage detection lines, for measuring an inter-terminal voltage of the battery cell, which connect each of a positive electrode and a negative electrode of the battery cell and the first control device. The first control device includes a balancing switch, which performs balancing discharge of the battery cell for each of the battery cells.

Abstract: Grating grooves of a predetermined shape are filled with a polymerizable liquid crystal, and thereafter, the polymerizable liquid crystal is cured to form a striped structure including a uniaxial polymer liquid crystal having an alignment orientation identical to the longitudinal direction of the grating grooves, without using a liquid crystal alignment film. Consequently, it is possible to stably and effectively align the polymer liquid crystal without using an alignment film and to adjust the film thickness easily, whereby a polarization splitting element exhibiting a high and uniform split efficiently can be obtained stably.

Abstract: An objective lens optical system includes a light beam splitting element and an objective lens and is configured to focus a light beam with a wavelength ? on an information recording surface of a first optical recording medium as a dual/double layer disc having a transparent substrate with a thickness t1 and to focus a light beam with a wavelength ? on an information recording surface of a second optical recording medium as a dual/double layer disc having a transparent substrate with a thickness t2 (t1<t2). The light beam splitting element is sectioned into regions that are designed to focus a light beams on an information recording surface of either one of the first optical recording medium and the second optical recording medium. Either one region has a negative or positive power so that a light focus position of a light beam having passed through the first region by the objective lens and a light focus position of a light beam having passed through the second region by the objective lens are different.

Abstract: An objective lens optical system focuses a light beam with a wavelength ?1 on an information recording surface of a first optical recording medium including a transparent substrate with a thickness t1, a light beam with the wavelength ?1 on an information recording surface of a second optical recording medium including a transparent substrate with a thickness t2, and a light beam with a wavelength ?3 on an information recording surface of a third optical recording medium including a transparent substrate with a thickness t3, by using a refraction action. Sectioning the area of the objective lens optical system is applied to a compatible technique for the same wavelengths, and generating an aberration for canceling a chromatic aberration caused by a difference in wavelength ? of the light beam is applied to a compatible technique for different wavelengths.

Abstract: A semiconductor device has peripheral electrode pads formed on the periphery of a semiconductor chip, land pads comprising the first land pads and the second land pads formed on the semiconductor chip, and circuits formed in the semiconductor chip. The peripheral electrode pads are connected to internal circuits by internal lines. The first land pads are connected to the peripheral electrode pads by rewired lines. The second electrode pads, on the other hand, are connected to the internal circuits by internal electrode pads and internal lines, not by the peripheral electrode pads.

Abstract: A semiconductor device has peripheral electrode pads formed on the periphery of a semiconductor chip, land pads comprising the first land pads and the second land pads formed on the semiconductor chip, and circuits formed in the semiconductor chip. The peripheral electrode pads are connected to internal circuits by internal lines. The first land pads are connected to the peripheral electrode pads by rewired lines. The second electrode pads, on the other hand, are connected to the internal circuits by internal electrode pads and internal lines, not by the peripheral electrode pads.

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Abstract: In a semiconductor device for treating signals of frequency not less than 800 MHz, a minimum thickness of an electrically conductive wire connecting a semiconductor electric circuit in the semiconductor device to an electric member other than the semiconductor device is determined along the following formula: 2 * 2 ω ⁢   ⁢ μ ⁢   ⁢ κ < h when h is the minimum thickness of the electrically conductive wire, &kgr; is an electrical conductivity of the electrically conductive wire, &mgr; is a magnetic permeability of the electrically conductive wire, &ohgr; is an angular frequency of the signals transmitted through the electrically conductive wire.

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Abstract: In a semiconductor device for treating signals of frequency not less than 800 MHz, a minimum thickness of an electrically conductive wire connecting a semiconductor electric circuit in the semiconductor device to an electric member other than the semiconductor device is determined along the following formula: 1 2 * 2 ω ⁢   ⁢ μ ⁢   ⁢ κ < h

Abstract: For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.