Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10?12 to 10?4.

Abstract: An information creation apparatus includes a processor configured to, in a case where priorities of power supply are set to power supply targets, set upper limits of power storage remaining amounts of the power supply targets such that the upper limit of the power storage remaining amount of a power supply target with a lower priority is set to a value larger than a reference value.

Abstract: An image forming apparatus includes a rotatable image bearing member and a rotatable developing member to carry developer made up of toner particles and carrier particles adhered to surfaces of the toner particles. Where a pressing force pressing the developing member against the image bearing member is F1, a total number of the carrier particles interposed between the toner particles and the image bearing member is N1, and an adhesion Ft between a carrier particle and a toner particle, measured when the carrier particle is pressed against the toner particle with F1/N1 that is a pressing force per unit carrier particle, and an adhesion Fdr1 between the carrier particle and the image bearing member, measured when the carrier particle is pressed against the image bearing member with F1/N1, satisfy Ft?Fdr1.

Abstract: A lighting system includes a plurality of lighting devices and a control device. The plurality of lighting devices are installed in a facility. The control device controls the plurality of lighting devices. The control device controls lighting light projected by at least one lighting device, belonging to the plurality of lighting devices, into colored lighting light, of which a color is different from a color white, to give, upon acquiring information about an event in question, a sign depending on the event in question.

Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10?12 to 10?4.

Abstract: The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1).

Abstract: The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for treating a semiconductor. The composition for treating a semiconductor according to the present invention is a composition for treating a semiconductor including a quaternary ammonium salt having a hydroxyl group, a polar organic solvent, at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof, and water, in which the mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.1.

Abstract: Provided is a chemical liquid that has an excellent etching ability for an Al oxide on a substrate and excellent etching selectivity between Al oxide and a specific metal oxide. Also provided is a treatment method using the chemical liquid. The chemical liquid contains at least one hydroxy acid selected from the group consisting of a hydroxy acid and a salt thereof, a quaternary ammonium compound, a trialkylamine, and water, and is alkaline.

Abstract: A chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.

Abstract: Provided herein is a two-component thermal interface material.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.

Abstract: An object of the present invention to provide a treatment liquid for a semiconductor device, where the treatment liquid has an excellent corrosion prevention property with respect to a metal-containing layer and excellent removability of an object to be removed, and also has excellent solubility in a post-treatment liquid. In addition, an object of the present invention is to provide a substrate treatment method using the treatment liquid. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which contains water, a removing agent, and a copolymer, and the copolymer has a first repeating unit having at least one group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit.

Abstract: The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate. The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3? and Cl?. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.