Patents by Inventor Tomonori Takahashi

Tomonori Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11072767
    Abstract: A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: July 27, 2021
    Assignee: FUJIFILM Corporation
    Inventors: Tomonori Takahashi, Tetsuya Kamimura
  • Publication number: 20210189235
    Abstract: The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate. The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3? and Cl?. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.
    Type: Application
    Filed: March 4, 2021
    Publication date: June 24, 2021
    Applicant: FUJIFILM Corporation
    Inventors: Nobuaki SUGIMURA, Tomonori TAKAHASHI, Hiroyuki SEKI
  • Publication number: 20210180192
    Abstract: The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42?, NO3?, PO43?, and BO33?. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.
    Type: Application
    Filed: February 24, 2021
    Publication date: June 17, 2021
    Applicant: FUJIFILM Corporation
    Inventors: Nobuaki SUGIMURA, Tomonori TAKAHASHI, Hiroyuki SEKI
  • Publication number: 20210134360
    Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
    Type: Application
    Filed: January 7, 2021
    Publication date: May 6, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Tomonori TAKAHASHI, Masanobu SHIRAKAWA, Osamu TORII, Marie TAKADA
  • Publication number: 20210102121
    Abstract: The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
    Type: Application
    Filed: November 24, 2020
    Publication date: April 8, 2021
    Inventors: Tomonori Takahashi, Frank Gonzalez
  • Patent number: 10961453
    Abstract: The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: March 30, 2021
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Frank Gonzalez
  • Publication number: 20210071078
    Abstract: This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.
    Type: Application
    Filed: September 2, 2020
    Publication date: March 11, 2021
    Inventors: Kazutaka Takahashi, Tomonori Takahashi, William A. Wojtczak
  • Patent number: 10927329
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: February 23, 2021
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 10927327
    Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: February 23, 2021
    Assignee: FUJIFILM Corporation
    Inventors: Tetsuya Kamimura, Tomonori Takahashi
  • Patent number: 10923186
    Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: February 16, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Tomonori Takahashi, Masanobu Shirakawa, Osamu Torii, Marie Takada
  • Publication number: 20210037637
    Abstract: An atomic beam generator includes a cathode constituted as a housing having an emission surface provided with an irradiation port through which an atomic beam is emissive; an anode disposed inside the cathode to generate plasma between the cathode and the anode; and a magnetic field generating unit including a first magnetic field generating unit that generates a first magnetic field and a second magnetic field generating unit that generates a second magnetic field, and guiding positive ions produced in the cathode to the emission surface by generating, in the cathode, the first magnetic field and the second magnetic field both parallel to the emission surface such that a magnetic field direction is leftward in the first magnetic field and is rightward in the second magnetic field when viewed from an emission surface side on condition of the first magnetic field being positioned above the second magnetic field.
    Type: Application
    Filed: October 16, 2020
    Publication date: February 4, 2021
    Applicants: National University Corporation Tokai National Higher Education and Research System, NGK Insulators, Ltd.
    Inventors: Seiichi HATA, Junpei SAKURAI, Yuuki HIRAI, Hiroyuki TSUJI, Takayoshi AKAO, Tomoki NAGAE, Tomonori TAKAHASHI
  • Publication number: 20210005473
    Abstract: The present invention provides a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removal performance as well as excellent anticorrosion performance for an object to be treated. The treatment liquid of an aspect of the present invention is a treatment liquid for a semiconductor device contains one or more hydroxylamine compounds selected from the group consisting of hydroxylamine and a hydroxylamine salt, an organic basic compound, an alcohol-based solvent, and a surfactant, in which a content of the alcohol-based solvent with respect to a total mass of the treatment liquid is 40% to 85% by mass, and a pH is 8 or higher.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 7, 2021
    Applicant: FUJIFILM Corporation
    Inventors: Tetsuya KAMIMURA, Tomonori Takahashi
  • Publication number: 20200377829
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Application
    Filed: August 20, 2020
    Publication date: December 3, 2020
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Publication number: 20200354632
    Abstract: The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.
    Type: Application
    Filed: July 28, 2020
    Publication date: November 12, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Nobuaki SUGIMURA, Tomonori TAKAHASHI, Hiroyuki SEKI, Atsushi MIZUTANI
  • Publication number: 20200357657
    Abstract: The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Tomonori TAKAHASHI, Nobuaki SUGIMURA, Hiroyuki SEKI
  • Publication number: 20200347299
    Abstract: The present invention provides a chemical solution, which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated, and a treatment method using the chemical solution. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate and includes periodic acids and a compound including one or more kinds of anions selected from the group consisting of IO3?, I?, and I3?, in which a content of the compound including anions with respect to a total mass of the chemical solution is 5 ppb by mass to 1% by mass.
    Type: Application
    Filed: July 9, 2020
    Publication date: November 5, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Tomonori TAKAHASHI, Nobuaki Sugimura, Hiroyuki Seki
  • Publication number: 20200303000
    Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
    Type: Application
    Filed: September 9, 2019
    Publication date: September 24, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Tomonori TAKAHASHI, Masanobu SHIRAKAWA, Osamu TORII, Marie TAKADA
  • Patent number: 10696933
    Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 5) at least one quaternary ammonium hydroxide; and 6) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: June 30, 2020
    Assignee: Fujifilm Electronic Materials U.S.A., Inc.
    Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
  • Patent number: 10689553
    Abstract: An object of the present invention is to provide a moisture-curable hot melt adhesive which can substantially suppress generation of carbon dioxide bubbles by a reaction of an isocyanate compound and moisture as well as volume expansion when an uncured adhesive is heated. The present invention relates to a moisture-curable hot melt adhesive for lighting appliances comprising: an urethane prepolymer obtained by mixing a polyol compound and an isocyanate compound, a thermoplastic polyacrylic resin and an oxazolidine compound.
    Type: Grant
    Filed: August 19, 2016
    Date of Patent: June 23, 2020
    Assignee: Henkel AG & Co. KGaA
    Inventors: Shingo Tsuno, Masaaki Dobashi, Takahide Morishita, Tomonori Takahashi
  • Patent number: D902661
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: November 24, 2020
    Inventor: Tomonori Takahashi