Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 5) at least one quaternary ammonium hydroxide; and 6) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one metal corrosion inhibitor; 4) at least one organic solvent; 5) at least one amidine base; and 6) water.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.

Abstract: This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one metal corrosion inhibitor; 4) at least one organic solvent; 5) at least one amidine base; and 6) water.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; 2) a pH adjusting agent, the pH adjusting agent being a base free of a metal ion and in an amount of at most about 3% by weight of the composition; 3) an alkylene glycol; and 4) water; in which the pH of the composition is from about 7 to about 11. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; 2) a pH adjusting agent, the pH adjusting agent being a base free of a metal ion and in an amount of at most about 3% by weight of the composition; 3) an alkylene glycol; and 4) water; in which the pH of the composition is from about 7 to about 11. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10—12 to 10?4. A method for washing a substrate and a method for removing a resist use the treatment liquid.

Abstract: A treatment liquid is a treatment liquid for a semiconductor device, containing a fluorine-containing compound, a corrosion inhibitor, and calcium, in which the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10?10 to 1.0×10?4.

Abstract: An atomic beam source includes a tubular cathode that includes an emission portion that includes an emission port through which an atomic beam can be emitted, a rod-shaped first anode disposed inside the cathode, and a rod-shaped second anode disposed inside the cathode and spaced from the first anode. At least one selected from the group consisting of a shape of the cathode, a shape of the first anode, a shape of the second anode, and a positional relationship between the cathode, the first anode, and the second anode is predetermined so that emission of sputter particles resulting from collision of cations, which have been generated by plasma between the first anode and the second anode, with at least one selected from the cathode, the first anode, and the second anode is reduced.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: A vehicle seat includes an armrest having a body provided with a recessed portion recessed toward a widthwise inward direction of the seat in such a manner as to surround a shaft member, and a hook member attached to a distal end of the shaft member and fitted in the recessed portion. The hook member includes a presser portion for pressing a skin layer of the armrest with the skin layer gripped between the presser portion and the body of the armrest, a baggage engagement portion extending from the presser portion in a widthwise outward direction of the seat for hooking engagement with the baggage, and a flange portion located at a distal end of the baggage engagement portion and extending in a direction substantially perpendicular to an axis of the shaft member for preventing the baggage from displacing off the hook member.

Abstract: An atomic beam source 10 includes a tubular cathode 20 that includes an emission portion 30 that includes an emission port 32 through which an atomic beam can be emitted, a rod-shaped first anode 40 disposed inside the cathode 20, and a rod-shaped second anode 50 disposed inside the cathode 20 and spaced from the first anode 40. At least one selected from the group consisting of a shape of the cathode, a shape of the first anode, a shape of the second anode, and a positional relationship between the cathode, the first anode, and the second anode is predetermined so that emission of sputter particles resulting from collision of cations, which have been generated by plasma between the first anode and the second anode, with at least one selected from the cathode, the first anode, and the second anode is reduced.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: An object of the present invention is to provide a moisture-curable hot melt adhesive which can substantially suppress generation of carbon dioxide bubbles by a reaction of an isocyanate compound and moisture as well as volume expansion when an uncured adhesive is heated. The present invention relates to a moisture-curable hot melt adhesive for lighting appliances comprising: an urethane prepolymer obtained by mixing a polyol compound and an isocyanate compound, a thermoplastic polyacrylic resin and an oxazolidine compound.