Abstract: To provide a lithium-containing composite oxide, a cathode active material and a positive electrode for a lithium ion secondary battery, with which a lithium ion secondary battery having favorable cycle characteristics even when charged at a high voltage can be obtained; and a lithium ion secondary battery having favorable cycle characteristics even when charged at a high voltage. A lithium-containing composite oxide which is represented by LiaNibCocMndMeO2 wherein M is Mg, Ca, Al, Ti, V, Nb, Mo, W or Zr, a+b+c+d+e=2, “a” is from 1.01 to 1.10, b is from 0.30 to 0.95, c is from 0 to 0.35, d is from 0 to 0.35, and e is from 0 to 0.05, wherein in an X-ray diffraction pattern obtained by reflection X-ray diffraction employing Cu-K? rays, the ratio (I104/I110) of the integrated intensity (I104) of a peak of (104) plane to the integrated intensity (I110) of a peak of (110) plane is at least 4.20.

Abstract: A polishing composition include a compound represented by the following formula (1), a cerium oxide particle, and water. R1 is S?, SR11 where R11 is a hydrogen atom or a hydrocarbon group optionally containing a hetero atom, N?R12 where R12 is a hydrogen atom or a hydrocarbon group optionally containing a hetero atom, NR13R14 where R13 and R14 are each independently a hydrogen atom or a hydrocarbon group optionally containing a hetero atom, or R13 and R14 are combined with each other to form a heterocycle, or N=NR15 where R15 is a hydrocarbon group; R2 is a hydrocarbon group optionally containing a hetero atom; X+ is a monovalent cation; n is 1 in the case where R1 is S? or N?R12 and is 0 in the case where R1 is other than S? and N?R12.

Abstract: To provide a lithium-containing composite oxide, a cathode active material and a positive electrode for a lithium ion secondary battery, with which a lithium ion secondary battery having favorable cycle characteristics even when charged at a high voltage can be obtained; and a lithium ion secondary battery having favorable cycle characteristics even when charged at a high voltage. A lithium-containing composite oxide which is represented by LiaNibCocMndMeO2 wherein M is Mg, Ca, Al, Ti, V, Nb, Mo, W or Zr, a+b+c+d+e=2, “a” is from 1.01 to 1.10, b is from 0.30 to 0.95, c is from 0 to 0.35, d is from 0 to 0.35, and e is from 0 to 0.05, wherein in an X-ray diffraction pattern obtained by reflection X-ray diffraction employing Cu-K? rays, the ratio (I104/I110) of the integrated intensity (I104) of a peak of (104) plane to the integrated intensity (I110) of a peak of (110) plane is at least 4.20.

Abstract: Surface modified lithium-containing composite oxide particles include base material particles of lithium-containing composite oxide, zirconium hydroxide or zirconium oxide, and at least one lithium salt selected from the group consisting of Li2ZrF6, Li2TiF6, Li3PO4, Li2SO4 and Li2SO4.H2O. The zirconium hydroxide or zirconium oxide, and the at least one lithium salt are attached to a surface of the base material particle. The lithium-containing composite oxide is represented by the formula: LipNxMyOzFa. N is at least one element selected from the group consisting of Co, Mn and Ni; M is at least one element selected from the group consisting of Al, elements of group 2, and transition metal elements other than N; 0.9<p<1.1; 0.85<x<1.0; 0<y<0.15; 1.9<z<2.1; x+y=1; and 0<a<0.05.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.

Abstract: To provide a cathode active material for a non-aqueous electrolyte secondary battery, which is excellent in the battery performance such as the charge and discharge cycle durability when used under high voltage, and which is excellent in the swelling-suppressing performance when stored at high temperature in a state where it is charged under high voltage. Lithium containing composite oxide particles having a predetermined composition, in which zirconium hydroxide or zirconium oxide and at least one lithium salt selected from the group consisting of Li2ZrF6, Li2TiF6, Li3PO4, Li2SO4 and Li2SO4.H2O are attached to the particle surface.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract: The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.

Abstract: The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.

Abstract: A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.

Abstract: A metal-polishing liquid used for chemical and mechanical polishing of copper wiring in a semiconductor device, the metal-polishing liquid comprising: (a) a tetrazole compound having a substituent in the 5-position; (b) a tetrazole compound not substituted in the 5-position; (c) abrasive grains; and (d) an oxidizing agent.

Abstract: The present invention provides a metal-polishing liquid that is used in chemical mechanical polishing for a conductor film made of copper or a copper alloy during semiconductor device production, wherein the metal-polishing liquid comprises the following components (1), (2) and (3): (1) an amino-acid derivative represented by the following formula (I) wherein in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms; (2) colloidal silica in which silicon atoms on a surface thereof are at least partially modified by aluminum atoms; and (3) an oxidant.

Abstract: The present invention provides a metal-polishing composition for use in chemical mechanical polishing of semiconductor devices, comprising: (a) a compound represented by the following Formula A, (b) a compound represented by the following Formula B, (c) an abrasive grain, and (d) an oxidizing agent: in Formula A, R1 represents an alkyl group having 1 to 3 carbon atoms; and R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and in Formula B, R3, R4, and R5 each independently represent a hydrogen atom, or an alkyl, aryl, alkoxy, amino, aminoalkyl, hydroxy, hydroxyalkyl, carboxy, carboxyalkyl or carbamoyl group.

Abstract: A garnet ferrite used for a non-reciprocal circuit device contains Fe in an amount lower than the value derived from stoichiometry by 0.5% to 5%, and more preferably by 1% to 3%. The garnet ferrite can exhibit a low insertion loss in a high-frequency band of more than 5 MHz.

Abstract: A garnet ferrite used for a non-reciprocal circuit device contains Fe in an amount lower than the value derived from stoichiometry by 0.5% to 5%, and more preferably by 1% to 3%. The garnet ferrite can exhibit a low insertion loss in a high-frequency band of more than 5 MHz.

Abstract: A wafer transfer apparatus for taking out a wafer from a wafer cassette having grooves on both ends for holding circumferential edges of a plurality of wafers by moving a wafer transfer arm in height directions and back and forth directions relative to the wafer cassette. The apparatus comprises a wafer pushing out mechanism for pushing out a wafer on the back of a wafer inlet/outlet side of the wafer cassette into which the transfer arm is inserted. The wafer pushing out mechanism comprises a pushing pin rotatable when it is in contact with the wafer and a driving mechanism for driving the pushing pin so as to push the wafer from the back of the wafer cassette to the wafer inlet/outlet side.