Abstract: A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.

Abstract: A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container performs a plurality of execution cycles each of which includes: supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).

Abstract: A cleaning method for removing a deposit in a processing chamber is provided. The cleaning method includes adjusting a temperature in the processing chamber to a first temperature; supplying a first gas including a hydrogen fluoride gas into the processing chamber in which the temperature is adjusted to the first temperature; adjusting the temperature in the processing chamber to a second temperature that is higher than the first temperature; and supplying a second gas including the hydrogen fluoride gas and an ammonia gas into the processing chamber in which the temperature is adjusted to the second temperature.

Abstract: The resin composition of the present disclosure contains a fluorene derivative represented by the following formula (1) and a polyamide-series resin: Wherein R1 represents a substituent, k denotes an integer of 0 to 8, R2a, R2b, R2c, and R2d each represent a hydrogen atom or a substituent, R3a and R3b each represent a hydrogen atom or a substituent, and X1a and X1b each represent a group defined in the following formula (X1): wherein R4 and R5 each represent a hydrogen atom or a hydrocarbon group; or R4 and R5 bend together to form a heterocyclic ring containing the nitrogen atom adjacent to R4 and R5. The resin composition has an excellent fluidity.

Abstract: A cleaning method includes: supplying a cleaning gas in a processing container while continuously increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby executing a cleaning of the processing container by removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the executing the cleaning, for each pressure of the plurality of time points. The executing the cleaning is implemented when the time-dependent data of the concentration of the predetermined gas generated in the continuously increasing the pressure changes from an increasing state to a decreasing state after exceeding a threshold value.

Abstract: A film deposition apparatus includes a process chamber, and a turntable disposed in the process chamber and configured to receive a substrate along a circumferential direction. At least one ozone gas supply part configured to supply ozone gas on the turntable is provided. A plate member is disposed to cover the ozone gas supply part. An ozone gas activator is disposed on or above an upper surface of the plate member and configured to activate the ozone gas.

Abstract: A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.

Abstract: The resin composition of the present disclosure contains a fluorene derivative represented by the following formula (1) and a polyamide-series resin: Wherein R1 represents a substituent, k denotes an integer of 0 to 8, R2a, R2b, R2c, and R2d each represent a hydrogen atom or a substituent, R3a and R3b each represent a hydrogen atom or a substituent, and X1a and X1b each represent a group defined in the following formula (X1): wherein R4 and R5 each represent a hydrogen atom or a hydrocarbon group; or R4 and R5 bend together to form a heterocyclic ring containing the nitrogen atom adjacent to R4 and R5. The resin composition has an excellent fluidity.

Abstract: A cleaning method includes: supplying a cleaning gas in a processing container while continuously increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby executing a cleaning of the processing container by removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the executing the cleaning, for each pressure of the plurality of time points. The executing the cleaning is implemented when the time-dependent data of the concentration of the predetermined gas generated in the continuously increasing the pressure changes from an increasing state to a decreasing state after exceeding a threshold value.

Abstract: A clip that fixes a ceiling joist intersecting a ceiling joist receiver to the ceiling joist receiver, includes: a top portion having a width of the ceiling joist receiver; a first hanging portion hanging down from one end of the top portion, and provided with, at a lower portion, first engaging projections extending left and right to engage the ceiling joist; and a second hanging portion hanging down from another end of the top portion, and provided with, at a lower portion, second engaging projections extending left and right to lock the ceiling joist. The first hanging portion has a length longer than that of the second hanging portion, and a recess extending in a direction toward the second hanging portion is provided at an intermediate position of the first hanging portion.

Abstract: A cleaning method for removing a film deposited in a processing container includes: executing a cleaning of a processing container by supplying a cleaning gas to the processing container while increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the execution of the cleaning, for each pressure of the plurality of time points.

Abstract: A partition wall has a structure with a wall end portion butted against another building structure and exposed to architectural spaces. An end post at the end portion of the wall is constituted from first and second end post elements, which are spaced apart from each other, so that a gap or an isolation zone interrupting a propagation of a solid vibration or insulating a path for propagating the solid vibration is formed between the first and second elements. An interior finishing panel for defining the architectural space on one side of the wall is fixed to the first element and the interior finishing panel for defining the architectural space on an opposite side of the wall is fixed to the second element.

Abstract: Provided are a method for producing a purified gas, which, when a valuable material is generated from a waste-derived raw material gas, can efficiently remove a phase transitioning impurity contained in the raw material gas, a method for producing a valuable material, a gas purification apparatus, and an apparatus for producing a valuable material. A method for producing a purified gas, comprising removing an impurity in a waste-derived raw material gas, the method comprising: a solid-phased impurity removing step S11 of passing the raw material gas through a phase transitioning impurity removing unit to remove a solid-phased phase transitioning impurity in the raw material gas; and an impurity removing step S12 of passing the raw material gas after the solid-phased impurity removing step through a pressure swing adsorption apparatus combined with a vacuum pump to remove an impurity in the raw material gas.

Abstract: Provided are a heat-insulating and sound-absorbing material improved in construction workability, and a partition wall in which degradation in sound insulation performance is suppressed. The heat-insulating and sound-absorbing material 1 is comprised of an agglomerate of inorganic fibers, wherein the agglomerate has a density of 10 to 20 kg/m3 and the inorganic fibers of the agglomerate have a length-weighted average fiber diameter of 2.0 to 8.7 ?m, and wherein the agglomerate contains: 20 to 66% of inorganic fibers having a length-weighted average fiber diameter of less than 4.0 ?m; and 13 to 58% of inorganic fibers having a length-weighted average fiber diameter of 7.0 ?m or more. The partition wall comprises a hollow wall portion, and the above heat-insulating and sound-absorbing material installed in the hollow wall portion.

Abstract: The present invention provides a means to prevent the clogging of pipes by freezing of gas discharged from a fermenter, especially in a low temperature environment such as in winter. Disclosed is an organic compound production system (10A) for producing an organic compound by microbial fermentation, including: a catalytic reactor (1) comprising a reactor containing a biocatalyst for synthesizing an organic compound; a valve (3) for discharging exhaust gas withdrawn from the catalytic reactor (1); and a pipe (6A) connecting the catalytic reactor (1) and the valve (3), wherein at least a part of the pipe (6A) is covered with an insulator (4).

Abstract: A cleaning method for removing a film deposited in a processing container includes: executing a cleaning of a processing container by supplying a cleaning gas to the processing container while increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the execution of the cleaning, for each pressure of the plurality of time points.