Abstract: An intermediate device 10A includes a transfer unit 11 that transfers a request including data to be transmitted from a local 30 to a remote 50, and a generation unit 12 that generates a pseudo-response to the request and returns the pseudo-response to the local 30. The intermediate device 10B includes a discard unit 13 that discards a response to the request from the remote 50. An intermediate device 20B includes a generation unit 22 that generates a pseudo-request based on an initial request for requesting data transmission from the local 30 to the remote 50 and transmits the pseudo-request to the remote 50, and a transfer unit 24 that transfers a response including data to be transmitted from the remote 50 to the local 30. The intermediate device 20A includes the discard unit 21 that discards a subsequent request from the local 30.

Abstract: Provided is a curable composition for inkjet and air cavity formation, the curable composition capable of forming a cured product layer having a high aspect ratio and capable of enhancing adhesiveness and sealability. A curable composition for inkjet and air cavity formation according to the present invention contains a photocurable compound having a (meth)acryloyl group or a vinyl group and having no cyclic ether group, and a thermosetting compound having no (meth)acryloyl group and having a cyclic ether group, in which a content of the thermosetting compound in 100 wt % of the curable composition for inkjet and air cavity formation is 5 wt % or more, and when a B-staged product is obtained by irradiating the curable composition for inkjet and air cavity formation with light having a wavelength of 365 nm at an illuminance of 2000 mW/cm2, a viscosity at 40° C. of the B-staged product is 2.5×102 Pa·s or more and 3.0×10? Pa·s or less.

Abstract: A structure detection device according to an embodiment includes: a reading processing unit that reads, as three-dimensional point group data on an object present in a three-dimensional space, data including three-dimensional position information and color information at a point on a surface of the object; a filtering processing unit that performs filtering processing for extracting three-dimensional point group data on a detection-target structure from the three-dimensional point group data on the object present in the three-dimensional space based on the color information; and a generation processing unit that generates three-dimensional model data in which the detection-target structure is represented as a three-dimensional model based on the three-dimensional point group data on the detection-target structure, the three-dimensional point group data being extracted by the filtering processing unit.

Abstract: A memory chip unit includes a pad electrode including first and second portions, and a memory cell array. A prober includes a probe card and a movement mechanism. The probe card includes a probe electrode to be in contact with the pad electrode, and a memory controller electrically coupled to the probe electrode and executes reading and writing on the memory cell array. The movement mechanism executes a first operation that brings the probe electrode into contact with the first portion and does not bring the probe electrode into contact with the second portion, and a second operation that does not bring the probe electrode into contact with the first portion and brings the probe electrode into contact with the second portion.

Abstract: It is possible to estimate a slack level accurately in consideration of a shape of a deformed cable. A point cloud analysis device sets a plurality of regions of interest obtained by window-searching a wire model including a quadratic curve model representing a cable obtained from a point cloud consisting of three-dimensional points on an object, the region of interest being divided into a first region and a second region.

Abstract: One aspect of the present invention provides a composite sheet which comprises a nitride sintered body having a porous structure and a semi-cured product of a thermosetting resin composition impregnated into the nitride sintered body, the line roughness Rz specified by JIS B 0601:2013 of at least one main surface being 10 ?m or less.

Abstract: A method for producing a liquid reaction mixture containing a radioisotope, in particular, a radioactive composition, minimizes device contamination with radioactive substances and increase speed and accuracy with which droplets are mixed. The method for producing a radioactive composition includes placing at least one first droplet L1 containing a radionuclide and at least one second droplet L2 containing a labeling substance on at least two respective dimples 5 among dimples 5 on a front surface 4b of an insulating layer 4 of a liquid manipulation device 1, and obtaining a liquid mixture M by using a change in electrostatic force caused by changing voltage applied to the electrodes 3 to thereby cause a relative movement between the at least one first droplet L1 and the at least one second droplet L2 so that the at least one first droplet L1 and the at least one second droplet L2 are mixed together at any one dimple among the dimples 5.

Abstract: An open-type liquid manipulation device can divide liquid, in particular, a droplet efficiently. The open-type liquid manipulation device according to the present invention includes: a substrate 1, 11, 21; at least three electrodes 2, 12, 13, 22, 23 located on a front surface 1b, 11b, 21b of the substrate 1, 11, 21; and an insulating layer 3, 14, 24 located over the front surface 1b, 11b, 21b of the substrate 1, 11, 21 to cover the at least three electrodes 2, 12, 13, 22, 23. The device includes a groove 4, 15, 25 that is concave in a direction from a front surface 3b, 14b, 24b of the insulating layer 3, 14, 24 toward a back surface 3a, 14a, 24a of the insulating layer 3, 14, 24. The groove 4, 15, 25 extends straddling the at least three electrodes. Liquid L is controlled on the front surface 3b, 14b, 24b of the insulating layer 3, 14, 24 by using a change in electrostatic force generated by changing voltage applied to the electrodes 2, 12, 13, 22, 23.

Abstract: A robot control device configured to control a robot includes a first memory part configured to store work data, a second memory part configured to store restoring data, a calculating part configured to perform an operation instructing process configured to read the work data and generate an operating instruction to the robot, and a data evacuation process configured to determine whether the operation instructing process operates normally, and when the calculating part determines that the operation instructing process does not operate normally, coincide the restoring data with the work data, and an operation controlling part configured to control operation of the robot based on the operating instruction.

Abstract: A liquid manipulation device has an enhanced ability to control liquid, in particular, a droplet, and offers improved fabrication efficiency. The liquid manipulation device according to the present invention includes: a substrate 1, 11 including a sheet shape or a film shape to have flexibility; a plurality of electrodes 2 located on a front surface 1b, 11b of the substrate 1, 11; and an insulating layer located over the front surface 1b, 11b of the substrate 1, 11 to cover the electrodes 2. The liquid manipulation device is configured to move liquid L on a front surface 3b of the insulating layer 3 by using an electrostatic force that is generated when voltage is applied to at least one of the electrodes 2. In the liquid manipulation device, the insulating layer 3 includes dimples 4 that are located in correspondence with the electrodes 2 and are curved concave in a concave direction directed from the front surface 3b of the insulating layer 3 toward the back surface 3a of the insulating layer 3.

Abstract: A method for producing a liquid reaction mixture containing a radioisotope, in particular, a radioactive composition, minimizes device contamination with radioactive substances and increase speed and accuracy with which droplets are mixed. The method for producing a radioactive composition includes placing at least one first droplet L1 containing a radionuclide and at least one second droplet L2 containing a labeling substance on at least two respective dimples 5 among dimples 5 on a front surface 4b of an insulating layer 4 of a liquid manipulation device 1, and obtaining a liquid mixture M by using a change in electrostatic force caused by changing voltage applied to the electrodes 3 to thereby cause a relative movement between the at least one first droplet L1 and the at least one second droplet L2 so that the at least one first droplet L1 and the at least one second droplet L2 are mixed together at any one dimple among the dimples 5.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A robot control device configured to control a robot includes a first memory part configured to store work data, a second memory part configured to store restoring data, a calculating part configured to perform an operation instructing process configured to read the work data and generate an operating instruction to the robot, and a data evacuation process configured to determine whether the operation instructing process operates normally, and when the calculating part determines that the operation instructing process does not operate normally, coincide the restoring data with the work data, and an operation controlling part configured to control operation of the robot based on the operating instruction.

Abstract: In a semiconductor laser device, a n-type cladding layer, a multi-quantum well active layer, and a p-type cladding layer are sequentially laminated on an n-type substrate, and a stripe structure is provided on this semiconductor laminated section. The n-type cladding layer has a first n-type cladding layer configured of Alx1Ga1-x1As (0.4<x1?1), and a second n-type cladding layer configured of (Alx2Ga1-x2)1-y2Iny2P (0?x2?1, 0.45?y2?0.55). The p-type cladding layer is configured of (Alx3Ga1-x3)1-y3Iny3P (0?x3?1, 0.45?y3?0.55). The width of the stripe structure is 10 ?m or more, and the refractive index with respect to the laser oscillation wavelength of the first n-type cladding layer is less than or equal to the refractive index with respect to the laser oscillation wavelength of the second n-type cladding layer.

Abstract: In a semiconductor laser device, a n-type cladding layer, a multi-quantum well active layer, and a p-type cladding layer are sequentially laminated on an n-type substrate, and a stripe structure is provided on this semiconductor laminated section. The n-type cladding layer has a first n-type cladding layer configured of Alx1Ga1-x1As (0.4<x1?1), and a second n-type cladding layer configured of (Alx2Ga1-x2)1-y2Iny2P (0?x2?1, 0.45?y2?0.55). The p-type cladding layer is configured of (Alx3Ga1-x3)1-y3Iny3P (0?x3?1, 0.45?y3?0.55). The width of the stripe structure is 10 ?m or more, and the refractive index with respect to the laser oscillation wavelength of the first n-type cladding layer is less than or equal to the refractive index with respect to the laser oscillation wavelength of the second n-type cladding layer.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: Provided is a power feeding device capable of performing wireless power feeding at a joint of elongated objects and mitigating a decline in transmission efficiency even through a long elongated object multistage-connected body. A power feeding device 1 includes an elongated object multistage-connected body in which elongated objects 3 each provided with a power feed circuit 30 are connected in multiple stages, wherein the power feed circuit 30 of one elongated object 3 is provided with a power-receiving coil 31 which wirelessly receives power from the power feed circuit 30 of another elongated object 3, a power feed line 32, and a power-transmitting coil 33 which wirelessly transmits power to the power feed circuit 30 of another elongated object 3, and the plurality of power feed circuits 30 constitute a periodic circuit.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A nitride semiconductor light-emitting element includes a substrate; and an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer includes a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, and a third n-type nitride semiconductor layer. The n-type dopant concentration in the second n-type nitride semiconductor layer is lower than that in the first n-type nitride semiconductor layer. The n-type dopant concentration in the third n-type nitride semiconductor layer is higher than that in the second n-type nitride semiconductor layer. A V-pit structure is partially formed in the second n-type nitride semiconductor layer, the third n-type nitride semiconductor layers, and the light-emitting layer. The average position of the starting point of the V-pit structure is present in the second n-type nitride semiconductor layer.