Abstract: A programming assistance apparatus assists programming with respect to a program that operates two or more devices including at least a robot in parallel. The programming assistance apparatus includes a device extractor, a determiner, and an alerter. The device extractor extracts an identification name of a device to which an operation command is issued per unit of parallel operation based on a description content of the program. The determiner determines whether there is a shared target device, to which operation commands targeting a same device in two or more parallel operations are issued. The alerter outputs an alert when it is determined that there is the shared target device.

Abstract: Provided is a positive electrode for a non-aqueous electrolyte secondary battery. The positive electrode includes a positive electrode current collector and a positive electrode mixed material layer formed on a surface of the positive electrode current collector. The positive electrode mixed material layer includes: a first positive electrode active material that is a layered compound represented by a following general formula (1), LiaNixCoyM11?x?yO2 (0<a?1.2, 0<x?0.9, 0<y?0.5, 0<x+y<1) (1), a second positive electrode active material having a carbon material film formed on a surface of a phosphate compound that has an olivine structure and is represented by a following general formula (2), LiMnzM2bFe1?z?bPO4 (0<z?0.9, 0?b?0.1, 0<z+b<1) (2), and an electrically conductive agent. A median diameter of the first positive electrode active material is larger than D90 of the second positive electrode active material.

Abstract: A method for producing a liquid reaction mixture containing a radioisotope, in particular, a radioactive composition, minimizes device contamination with radioactive substances and increase speed and accuracy with which droplets are mixed. The method for producing a radioactive composition includes placing at least one first droplet L1 containing a radionuclide and at least one second droplet L2 containing a labeling substance on at least two respective dimples 5 among dimples 5 on a front surface 4b of an insulating layer 4 of a liquid manipulation device 1, and obtaining a liquid mixture M by using a change in electrostatic force caused by changing voltage applied to the electrodes 3 to thereby cause a relative movement between the at least one first droplet L1 and the at least one second droplet L2 so that the at least one first droplet L1 and the at least one second droplet L2 are mixed together at any one dimple among the dimples 5.

Abstract: An open-type liquid manipulation device can divide liquid, in particular, a droplet efficiently. The open-type liquid manipulation device according to the present invention includes: a substrate 1, 11, 21; at least three electrodes 2, 12, 13, 22, 23 located on a front surface 1b, 11b, 21b of the substrate 1, 11, 21; and an insulating layer 3, 14, 24 located over the front surface 1b, 11b, 21b of the substrate 1, 11, 21 to cover the at least three electrodes 2, 12, 13, 22, 23. The device includes a groove 4, 15, 25 that is concave in a direction from a front surface 3b, 14b, 24b of the insulating layer 3, 14, 24 toward a back surface 3a, 14a, 24a of the insulating layer 3, 14, 24. The groove 4, 15, 25 extends straddling the at least three electrodes. Liquid L is controlled on the front surface 3b, 14b, 24b of the insulating layer 3, 14, 24 by using a change in electrostatic force generated by changing voltage applied to the electrodes 2, 12, 13, 22, 23.

Abstract: A robot control device configured to control a robot includes a first memory part configured to store work data, a second memory part configured to store restoring data, a calculating part configured to perform an operation instructing process configured to read the work data and generate an operating instruction to the robot, and a data evacuation process configured to determine whether the operation instructing process operates normally, and when the calculating part determines that the operation instructing process does not operate normally, coincide the restoring data with the work data, and an operation controlling part configured to control operation of the robot based on the operating instruction.

Abstract: A liquid manipulation device has an enhanced ability to control liquid, in particular, a droplet, and offers improved fabrication efficiency. The liquid manipulation device according to the present invention includes: a substrate 1, 11 including a sheet shape or a film shape to have flexibility; a plurality of electrodes 2 located on a front surface 1b, 11b of the substrate 1, 11; and an insulating layer located over the front surface 1b, 11b of the substrate 1, 11 to cover the electrodes 2. The liquid manipulation device is configured to move liquid L on a front surface 3b of the insulating layer 3 by using an electrostatic force that is generated when voltage is applied to at least one of the electrodes 2. In the liquid manipulation device, the insulating layer 3 includes dimples 4 that are located in correspondence with the electrodes 2 and are curved concave in a concave direction directed from the front surface 3b of the insulating layer 3 toward the back surface 3a of the insulating layer 3.

Abstract: A method for producing a liquid reaction mixture containing a radioisotope, in particular, a radioactive composition, minimizes device contamination with radioactive substances and increase speed and accuracy with which droplets are mixed. The method for producing a radioactive composition includes placing at least one first droplet L1 containing a radionuclide and at least one second droplet L2 containing a labeling substance on at least two respective dimples 5 among dimples 5 on a front surface 4b of an insulating layer 4 of a liquid manipulation device 1, and obtaining a liquid mixture M by using a change in electrostatic force caused by changing voltage applied to the electrodes 3 to thereby cause a relative movement between the at least one first droplet L1 and the at least one second droplet L2 so that the at least one first droplet L1 and the at least one second droplet L2 are mixed together at any one dimple among the dimples 5.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A robot control device configured to control a robot includes a first memory part configured to store work data, a second memory part configured to store restoring data, a calculating part configured to perform an operation instructing process configured to read the work data and generate an operating instruction to the robot, and a data evacuation process configured to determine whether the operation instructing process operates normally, and when the calculating part determines that the operation instructing process does not operate normally, coincide the restoring data with the work data, and an operation controlling part configured to control operation of the robot based on the operating instruction.

Abstract: In a semiconductor laser device, a n-type cladding layer, a multi-quantum well active layer, and a p-type cladding layer are sequentially laminated on an n-type substrate, and a stripe structure is provided on this semiconductor laminated section. The n-type cladding layer has a first n-type cladding layer configured of Alx1Ga1-x1As (0.4<x1?1), and a second n-type cladding layer configured of (Alx2Ga1-x2)1-y2Iny2P (0?x2?1, 0.45?y2?0.55). The p-type cladding layer is configured of (Alx3Ga1-x3)1-y3Iny3P (0?x3?1, 0.45?y3?0.55). The width of the stripe structure is 10 ?m or more, and the refractive index with respect to the laser oscillation wavelength of the first n-type cladding layer is less than or equal to the refractive index with respect to the laser oscillation wavelength of the second n-type cladding layer.

Abstract: In a semiconductor laser device, a n-type cladding layer, a multi-quantum well active layer, and a p-type cladding layer are sequentially laminated on an n-type substrate, and a stripe structure is provided on this semiconductor laminated section. The n-type cladding layer has a first n-type cladding layer configured of Alx1Ga1-x1As (0.4<x1?1), and a second n-type cladding layer configured of (Alx2Ga1-x2)1-y2Iny2P (0?x2?1, 0.45?y2?0.55). The p-type cladding layer is configured of (Alx3Ga1-x3)1-y3Iny3P (0?x3?1, 0.45?y3?0.55). The width of the stripe structure is 10 ?m or more, and the refractive index with respect to the laser oscillation wavelength of the first n-type cladding layer is less than or equal to the refractive index with respect to the laser oscillation wavelength of the second n-type cladding layer.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: Provided is a power feeding device capable of performing wireless power feeding at a joint of elongated objects and mitigating a decline in transmission efficiency even through a long elongated object multistage-connected body. A power feeding device 1 includes an elongated object multistage-connected body in which elongated objects 3 each provided with a power feed circuit 30 are connected in multiple stages, wherein the power feed circuit 30 of one elongated object 3 is provided with a power-receiving coil 31 which wirelessly receives power from the power feed circuit 30 of another elongated object 3, a power feed line 32, and a power-transmitting coil 33 which wirelessly transmits power to the power feed circuit 30 of another elongated object 3, and the plurality of power feed circuits 30 constitute a periodic circuit.

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A nitride semiconductor light-emitting element includes a substrate; and an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer includes a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, and a third n-type nitride semiconductor layer. The n-type dopant concentration in the second n-type nitride semiconductor layer is lower than that in the first n-type nitride semiconductor layer. The n-type dopant concentration in the third n-type nitride semiconductor layer is higher than that in the second n-type nitride semiconductor layer. A V-pit structure is partially formed in the second n-type nitride semiconductor layer, the third n-type nitride semiconductor layers, and the light-emitting layer. The average position of the starting point of the V-pit structure is present in the second n-type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ? (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ? (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.

Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

Abstract: A crawler device includes a wheel support, wheels respectively rotatably supported thereto, and a crawler belt run around the wheels. Each of the wheels includes a rigid wheel body and an elastic material exterior part fixed to an outer periphery of the wheel body. Raised portions are formed in an outer periphery of the exterior part to continuously extend in a width direction and be arranged in a circumferential direction spaced from each other. Drain grooves extending through the exterior part in the width direction are formed between the raised portions. Top surfaces of the raised portions of the exterior part surface contact an inner peripheral surface of the crawler belt with a frictional force working therebetween. Restriction members stopping opposite side edges of the crawler belt are provided in the wheel support to restrict the crawler belt from being displaced with respect to the wheels in the width direction.

Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.