Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Abstract: A nitride semiconductor light-emitting element includes a substrate; and an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer includes a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, and a third n-type nitride semiconductor layer. The n-type dopant concentration in the second n-type nitride semiconductor layer is lower than that in the first n-type nitride semiconductor layer. The n-type dopant concentration in the third n-type nitride semiconductor layer is higher than that in the second n-type nitride semiconductor layer. A V-pit structure is partially formed in the second n-type nitride semiconductor layer, the third n-type nitride semiconductor layers, and the light-emitting layer. The average position of the starting point of the V-pit structure is present in the second n-type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ? (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ? (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.

Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

Abstract: A crawler device includes a wheel support, wheels respectively rotatably supported thereto, and a crawler belt run around the wheels. Each of the wheels includes a rigid wheel body and an elastic material exterior part fixed to an outer periphery of the wheel body. Raised portions are formed in an outer periphery of the exterior part to continuously extend in a width direction and be arranged in a circumferential direction spaced from each other. Drain grooves extending through the exterior part in the width direction are formed between the raised portions. Top surfaces of the raised portions of the exterior part surface contact an inner peripheral surface of the crawler belt with a frictional force working therebetween. Restriction members stopping opposite side edges of the crawler belt are provided in the wheel support to restrict the crawler belt from being displaced with respect to the wheels in the width direction.

Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ? (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ? (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.

Abstract: The present invention provides a fixed bed reactor for carrying out a mixed gas/liquid phase reaction, wherein the reactor has a piping structure composed of microchannels, the cross-sectional area of the fixed bed is 0.0001 cm2 to 0.

Abstract: The handling apparatus is used for positioning and holding of drill pipes. At least, a handling apparatus for the drill pipes is so arranged that it can be positioned both horizontally and vertically and it is equipped with a controllable clamping apparatus for the drill pipes. In the vicinity of the holding apparatus, a centering apparatus is arranged for the drill pipe to be held.

Abstract: An underwater traveling vehicle includes: a vehicle body 2; an endless track means 3 which is rotatably mounted to the vehicle body 2; a drive means which is provided in the vehicle body 2 so as to drive the endless track means 3; and a thruster 4 which is provided in the vehicle body 2.

Abstract: A crawler device includes a wheel support, wheels respectively rotatably supported thereto, and a crawler belt run around the wheels. Each of the wheels includes a rigid wheel body and an elastic material exterior part fixed to an outer periphery of the wheel body. Raised portions are formed in an outer periphery of the exterior part to continuously extend in a width direction and be arranged in a circumferential direction spaced from each other. Drain grooves extending through the exterior part in the width direction are formed between the raised portions. Top surfaces of the raised portions of the exterior part surface contact an inner peripheral surface of the crawler belt with a frictional force working therebetween. Restriction members stopping opposite side edges of the crawler belt are provided in the wheel support to restrict the crawler belt from being displaced with respect to the wheels in the width direction.

Abstract: The handling apparatus is used for positioning and holding of drill pipes. At least, a handling apparatus for the drill pipes is so arranged that it can be positioned both horizontally and vertically and it is equipped with a controllable clamping apparatus for the drill pipes. In the vicinity of the holding apparatus, a centering apparatus is arranged for the drill pipe to be held.

Abstract: An underwater traveling vehicle includes: a vehicle body 2; an endless track means 3 which is rotatably mounted to the vehicle body 2; a drive means which is provided in the vehicle body 2 so as to drive the endless track means 3; and a thruster 4 which is provided in the vehicle body 2.

Abstract: A projector system includes a first projection section projecting inputted image information onto a projection target, a laser pointer pointing a predetermined part of an image projected onto a screen 1, an image pick-up section picking up the image in a state pointed by the laser pointer, and a pointed position detecting section detecting the position of the part pointed by the laser pointer on the basis of the image information picked up by the image pick-up section. And a projection lens projects an image on the basis of the position of the part pointed by the laser pointer and detected by the pointed position detecting section and/or in correspondence to the image of the pointed part.

Abstract: An object of the invention is to provide a door open/close device capable of unlocking/locking a door simultaneously with an operation of externally and internally opening/closing the door.

Abstract: Disclosed herein are a crustal core sampler, by which a crustal core sample can be cored in a state coated with a flow-able coating material free of any contamination, and a method of coring a core sample using this crustal core sampler. The crustal core sampler comprises a drilling mechanism and a barrel, wherein the barrel is equipped with a flow-able coating material-ejecting mechanism, and a columnar crustal core portion is coated with a flow-able coating material. Alternatively, the crustal core sampler is constructed by a drill pipe and an inner barrel, wherein the inner barrel is equipped with an inner barrel body, a core elevator, a channel-forming member for forming a flow-able coating material-running channel and flow-able coating material-ejecting openings, and a columnar crustal core portion is coated with a flow-able coating material.

Abstract: A projector system includes a first projection section projecting inputted image information onto a projection target, a laser pointer pointing a predetermined part of an image projected onto a screen 1, an image pick-up section picking up the image in a state pointed by the laser pointer, and a pointed position detecting section detecting the position of the part pointed by the laser pointer on the basis of the image information picked up by the image pick-up section. And a projection lens projects an image on the basis of the position of the part pointed by the laser pointer and detected by the pointed position detecting section and/or in correspondence to the image of the pointed part.

Abstract: Disclosed herein are a crustal core sampler, by which a crustal core sample can be cored in a state coated with a flow-able coating material free of any contamination, and a method of coring a core sample using this crustal core sampler. The crustal core sampler comprises a drilling mechanism and a barrel, wherein the barrel is equipped with a flow-able coating material-ejecting mechanism, and a columnar crustal core portion is coated with a flow-able coating material. Alternatively, the crustal core sampler is constructed by a drill pipe and an inner barrel, wherein the inner barrel is equipped with an inner barrel body, a core elevator, a channel-forming member for forming a flow-able coating material-running channel and flow-able coating material-ejecting openings, and a columnar crustal core portion is coated with a flow-able coating material.

Abstract: Disclosed is a process for producing an oxide catalyst for use in producing (meth)acrylonitrile from propane or isobutane by ammoxidation in the gaseous phase, the oxide catalyst comprising a compound oxide containing Mo, V and Sb as essential component elements, which process comprises subjecting a solution or slurry, in water and/or an alcohol, of a raw-material mixture comprising a Mo compound, a V compound and an Sb compound as essential raw materials to a specific oxidation treatment using an oxidizing gas and/or an oxidizing liquid before subjecting the solution or slurry to drying and subsequent calcination. Further, also disclosed is a process for producing a base-treated oxide catalyst by treating the above-mentioned oxide catalyst with an aqueous basic solution.

Abstract: A catalyst for the selective oxidation of alkanes and alkenes has been developed. The catalyst consists of a noble metal component such as platinum and a SbOx component. A unique feature of the catalyst is that the noble metal component is present as particles of which from about 1 to about 30 mole % of each particle is in the form of a noble metal/Sb alloy. Optionally a modifier and/or a refractory inorganic oxide may also be added to the catalyst. A process for preparing the catalyst is also presented.