Abstract: A protection circuit includes a first insulated gate field-effect transistor in which: a first main electrode is coupled between an external terminal and an internal circuit; a second main electrode and a gate electrode are coupled to a reference power supply; and an electric charge accumulation section configured to accumulate hot carriers is provided in a gate insulating film.

Abstract: An information processing apparatus includes a processor configured to: receive line-of-sight information indicating a position to which a user directs the user's line of sight, and operation information input by the user operating operation buttons; and authenticate the user with the received line-of-sight information and the received operation information.

Abstract: A prober for preventing a collision between a probe and a probe position detecting camera and a prober operation method are provided. A prober that performs an inspection by bringing a probe into contact with an electrode of a wafer W includes: a probe position detecting camera for detecting the position of the tip of the probe to perform relative positional alignment between the electrode of the wafer W and the probe; a probe height detector, provided separately from the probe position detecting camera, for detecting the height of the tip of the probe from a reference plane serving as a reference for the height of the probe position detecting camera; and a first height adjusting mechanism for changing the height of the probe position detecting camera from the reference plane, based on the detection result of the probe height detector.

Abstract: A method for manufacturing a telescopic shaft including a male shaft and a cylindrical female shaft slidably connected to each other in an axial direction, in which an outer circumferential surface of the male shaft or an inner circumferential surface of the female shaft is coated with a resin coating layer, includes a coating step, a broaching step, and a cooling step. In the coating step, a powder coating material is attached, by a fluid bed dip method, on the outer circumferential surface of the male shaft or the inner circumferential surface of the female shaft which is heated in advance and the resin coating layer is formed. In the broaching step, the resin coating layer is caused to be thin by broaching before cooling of the formed powder coating material is completed. In the cooling step, the thin resin coating layer is cooled.

Abstract: Carbodiimide is added to a molten polyamide resin so as to provide resin pellets. The percentage of residual unreacted carbodiimide to each resin pellet is 0.03% to 0.33% by mass. Manufacturing molded articles using the resin pellets achieves both of an improvement in mechanical strength and an increase in wear resistance, and reduces property variations among the molded articles.

Abstract: A prober for preventing a collision between a probe and a probe position detecting camera and a prober operation method are provided. A prober that performs an inspection by bringing a probe into contact with an electrode of a wafer W includes: a probe position detecting camera for detecting the position of the tip of the probe to perform relative positional alignment between the electrode of the wafer W and the probe; a probe height detector, provided separately from the probe position detecting camera, for detecting the height of the tip of the probe from a reference plane serving as a reference for the height of the probe position detecting camera; and a first height adjusting mechanism for changing the height of the probe position detecting camera from the reference plane, based on the detection result of the probe height detector.

Abstract: In a method of manufacturing a sliding member including a polyamide resin and a filler, a compound having a carbodiimide bond is supplied during kneading of the polyamide resin and the filler.

Abstract: In a sliding shaft, an outer circumferential surface of a male shaft is coated with a resin coating layer formed by a fluidized bed powder coating method by using a powder coating material containing a base resin and an aliphatic compound. A steering device includes this sliding shaft as an intermediate shaft transmitting steering force.

Abstract: Carbodiimide is added to a molten polyamide resin so as to provide resin pellets. The percentage of residual unreacted carbodiimide to each resin pellet is 0.03% to 0.33% by mass. Manufacturing molded articles using the resin pellets achieves both of an improvement in mechanical strength and an increase in wear resistance, and reduces property variations among the molded articles.

Abstract: In a method of manufacturing a sliding member including a polyamide resin and a filler, a compound having a carbodiimide bond is supplied during kneading of the polyamide resin and the filler.

Abstract: A method for manufacturing a telescopic shaft including a male shaft and a cylindrical female shaft slidably connected to each other in an axial direction, in which an outer circumferential surface of the male shaft or an inner circumferential surface of the female shaft is coated with a resin coating layer, includes a coating step, a broaching step, and a cooling step. In the coating step, a powder coating material is attached, by a fluid bed dip method, on the outer circumferential surface of the male shaft or the inner circumferential surface of the female shaft which is heated in advance and the resin coating layer is formed. In the broaching step, the resin coating layer is caused to be thin by broaching before cooling of the formed powder coating material is completed. In the cooling step, the thin resin coating layer is cooled.

Abstract: In a sliding shaft, an outer circumferential surface of a male shaft is coated with a resin coating layer formed by a fluidized bed powder coating method by using a powder coating material containing a base resin and an aliphatic compound. A steering device includes this sliding shaft as an intermediate shaft transmitting steering force.

Abstract: A resin film is caught in a meshing portion between a spline shaft and a toothed roller. The spline shaft has an adhesive applied to the surface of splines formed on the outer periphery of the spline shaft, and has been heated. The toothed roller is rotatable about a center axis that is parallel to a center axis of the spline shaft. The resin film is wound up around the outer periphery of the spline shaft while the resin film is pressed to be adhered to the surface of the splines by the toothed roller at the meshing portion along with interlocked rotation of the spline shaft and the toothed roller. Consequently, a resin coating is formed on the surface of the splines.

Abstract: A semiconductor device includes a compound semiconductor substrate; a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer; and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer; and a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer.

Abstract: A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.

Abstract: A semiconductor device includes a compound semiconductor substrate; a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer; and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer; and a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer.

Abstract: A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.

Abstract: A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.

Abstract: A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.

Abstract: A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.