Abstract: A plasma processing apparatus includes a processing chamber; a placing table disposed in the processing chamber to place a substrate thereon; an upper electrode facing the placing table; a member configured to adjust a temperature of the upper electrode; a first sensor provided within the member configured to adjust the temperature of the upper electrode, and configured to measure the temperature of the upper electrode; and a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz.

Abstract: There is a shower head through which a processing gas is supplied into an inside of a processing chamber, comprising: a cooling plate having a gas diffusion chamber, and a plurality of first through holes passing through from the gas diffusion chamber to a first surface on a processing chamber side; an upper electrode having a second surface in contact with the first surface of the cooling plate, a third surface configured to form an inner surface of the processing chamber, and a plurality of second through holes passing through from the second surface to the third surface; and a plurality of recesses formed in the first surface or the second surface and provided apart from each other, wherein one of the plurality of first through holes is connected to at least two of the plurality of second through holes via one of the plurality of recesses.

Abstract: A chamber is provided where an exhaust port for exhausting a gas in an inside thereof is formed thereon and substrate processing for a substrate is executed in the inside. A partition member partitions the inside of the chamber into a processing region where the substrate processing is executed and an exhaust region that leads to the exhaust port. The partition member is configured to include a plurality of plate-shaped members. The plurality of plate-shaped members are provided in such a manner that at least a part of each thereof is arranged obliquely at intervals in a side view from a side of a side surface of the chamber and an upper end part of each thereof is arranged so as to overlap with a lower end part of the plate-shaped member that is adjacent thereto in a top view from an upper side of the chamber.

Abstract: A plasma processing apparatus includes a processing chamber; a placing table disposed in the processing chamber to place a substrate thereon; an upper electrode facing the placing table; a member configured to adjust a temperature of the upper electrode; a first sensor provided within the member configured to adjust the temperature of the upper electrode, and configured to measure the temperature of the upper electrode; and a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz.