Patents by Inventor Tomoyuki Enomoto
Tomoyuki Enomoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100081081Abstract: There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.Type: ApplicationFiled: February 19, 2008Publication date: April 1, 2010Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tomoyuki Enomoto, Takahiro Sakaguchi, Rikimaru Sakamoto, Masaki Nagai
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Publication number: 20100075253Abstract: There is provided a resist underlayer film forming composition that is used in a lithography process for the production of semiconductor devices and that can be developed with an alkaline developer for photoresists, and a method of forming a photoresist pattern by using the resist underlayer film forming composition. The resist underlayer film forming composition used in a lithography process for a production of a semiconductor device comprising: an alkali-soluble resin (a); a polynuclear phenol (b); a compound (c) having at least two vinylether groups; and a photoacid generator (d). The alkali-soluble resin (a) may be a polymer containing a unit structure having a carboxyl group, and the polynuclear phenol (b) may be a compound having 2 to 30 phenolic hydroxyl groups in the molecule.Type: ApplicationFiled: December 11, 2007Publication date: March 25, 2010Applicant: NISSAN CHEMICAL INDUSTRIES , LTD.Inventors: Masakazu Kato, Takahiro Hamada, Tomoyuki Enomoto
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Publication number: 20100022090Abstract: There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.Type: ApplicationFiled: November 27, 2007Publication date: January 28, 2010Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Takahiro Sakaguchi, Tomoyuki Enomoto, Tetsuya Shinjo
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Publication number: 20090253076Abstract: [Object] To provide a coating-type underlayer coating forming composition that is applied for multi-ply coating process by thin film resist in order to prevent collapse of resist pattern after development with miniaturization of resist pattern, and that shows a sufficient etching resistance against a semiconductor substrate to be processed on processing of the substrate by having a low dry etching rate compared with the photoresist and substrate. [Means for solving problems] A coating-type underlayer coating forming composition that is used for lithography process by multiply coating, comprising a polymer containing a vinylnaphthalene based structural unit and an acrylic acid based structural unit containing an aromatic hydroxy group or a hydroxy-containing ester. A coating-type underlayer coating forming composition further comprising an acrylic acid based structural unit containing an aliphatic cyclic compound-containing ester or an aromatic compound-containing ester.Type: ApplicationFiled: August 15, 2006Publication date: October 8, 2009Applicant: Nissan Chemical Industries, Ltd.Inventors: Takahiro Sakaguchi, Tomoyuki Enomoto
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Patent number: 7598182Abstract: There is provided an anti-reflective coating forming composition for use in a lithography and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. Concretely, the composition comprises a polyamic acid produced from a tetracarboxylic dianhydride compound and a diamine compound having at least one carboxyl group, a compound having at least two epoxy groups, and a solvent.Type: GrantFiled: August 27, 2004Date of Patent: October 6, 2009Assignee: Nissan Chemical Industries, Ltd.Inventors: Tadashi Hatanaka, Tomoyuki Enomoto, Shigeo Kimura
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Publication number: 20090053647Abstract: [Object] To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative. [Means for Solving Problems] A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.Type: ApplicationFiled: May 24, 2006Publication date: February 26, 2009Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tomoyuki Enomoto, Takahiro Kishioka, Takahiro Sakaguchi
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Patent number: 7425399Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.Type: GrantFiled: October 8, 2003Date of Patent: September 16, 2008Assignee: Nissan Chemical Industries, Ltd.Inventors: Takahiro Kishioka, Ken-ichi Mizusawa, Tomoyuki Enomoto, Rikimaru Sakamoto, Keisuke Nakayama, Yasuo Kawamura
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Publication number: 20080206680Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.Type: ApplicationFiled: November 2, 2007Publication date: August 28, 2008Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Takahiro Kishioka, Ken-ichi Mizusawa, Tomoyuki Enomoto, Rikimaru Sakamoto, Keisuke Nakayama, Yasuo Kawamura
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Publication number: 20080138744Abstract: There is provided an anti-reflective coating forming composition for use in a lithography of the manufacture of semiconductor devices and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. The anti-reflective coating forming composition comprises a compound having at least two vinyl ether groups, an alkali-soluble compound having at least two phenolic hydroxy groups or carboxyl groups, a photoacid generator, and a solvent.Type: ApplicationFiled: May 11, 2005Publication date: June 12, 2008Applicant: Nissan Chemical Industries, Ltd.Inventors: Tadashi Hatanaka, Shigeo Kimura, Tomoyuki Enomoto
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Publication number: 20080118870Abstract: There is provided an anti-reflective coating forming composition for lithography comprising a reaction product obtained by reacting a sulfur-containing compound having thiourea structure with a nitrogen-containing compound having two or more nitrogen atoms substituted with a hydroxymethyl group or an alkoxymethyl group in the presence of an acid catalyst and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists and can use in lithography process for manufacturing semiconductor device.Type: ApplicationFiled: September 27, 2005Publication date: May 22, 2008Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tomoyuki Enomoto, Yoshiomi Hiroi, Keisuke Nakayama
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Publication number: 20080070132Abstract: A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.Type: ApplicationFiled: September 13, 2007Publication date: March 20, 2008Applicants: HOYA CORPORATION, NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Masahiro Hashimoto, Tomoyuki Enomoto, Takahiro Sakaguchi, Rikimaru Sakamoto, Masaki Nagai
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Publication number: 20070238029Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.Type: ApplicationFiled: June 24, 2005Publication date: October 11, 2007Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Takahiro Sakaguchi, Tomoyuki Enomoto
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Publication number: 20070190459Abstract: There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.Type: ApplicationFiled: February 8, 2007Publication date: August 16, 2007Applicants: HOYA CORPORATION, NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Masahiro Hashimoto, Tomoyuki Enomoto, Takahiro Sakaguchi, Rikimaru Sakamoto, Masaki Nagai
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Publication number: 20070004228Abstract: There is provided an anti-reflective coating forming composition for use in a lithography and for forming an anti-reflective coating that can be developed with an alkaline developer for photoresist, and a method for forming photoresist pattern by use of the anti-reflective coating forming composition. Concretely, the composition comprises a polyamic acid produced from a tetracarboxylic dianhydride compound and a diamine compound having at least one carboxyl group, a compound having at least two epoxy groups, and a solvent.Type: ApplicationFiled: August 27, 2004Publication date: January 4, 2007Applicant: Nissan Chemical Industries, Ltd.Inventors: Tadashi Hatanaka, Tomoyuki Enomoto, Shigeo Kimura
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Publication number: 20060290429Abstract: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.Type: ApplicationFiled: October 8, 2003Publication date: December 28, 2006Applicant: Nissan Chemical Industries, Ltd.Inventors: Takahiro Kishioka, Ken-ichi Mizusawa, Tomoyuki Enomoto, Rikimaru Sakamoto, Keisuke Kanayama, Yasuo Kawamura
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Patent number: 7038328Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.Type: GrantFiled: October 15, 2002Date of Patent: May 2, 2006Assignee: Brewer Science Inc.Inventors: Tomoyuki Enomoto, Keisuke Nakayama, Rama Puligadda
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Publication number: 20040072420Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.Type: ApplicationFiled: October 15, 2002Publication date: April 15, 2004Applicant: Brewer Science, IncInventors: Tomoyuki Enomoto, Keisuke Nakayama, Rama Puligadda
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Patent number: 6680160Abstract: Anti-reflective coatings formed from new polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.Type: GrantFiled: June 28, 2002Date of Patent: January 20, 2004Assignee: Brewer Science, Inc.Inventors: Tomoyuki Enomoto, Ken-Ichi Mizusawa, Shin-Ya Arase, Rama Puligadda
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Patent number: 6632544Abstract: An aromatic amine derivative of the following general formula (1) is useful to form an auxiliary carrier transporting layer in an electroluminescent device. R1 is a monovalent hydrocarbon group or organooxy group, and A and B have the following general formula (2) or (3).Type: GrantFiled: August 23, 2001Date of Patent: October 14, 2003Assignees: Nissan Chemical Industries, Ltd.Inventors: Junji Kido, Hiroyoshi Fukuro, Hitoshi Furusho, Tomoyuki Enomoto
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Patent number: 6632545Abstract: In an electroluminescent device comprising an anode, a cathode, and an electroluminescent organic layer interposed therebetween, wherein a luminescent material in the organic layer emits light upon application of a voltage between the anode and the cathode, an auxiliary carrier transporting layer which contains an aromatic amine derivative comprising recurring units of formula (1) and having a number average molecular weight of 200-100,000 is formed between the anode and the organic layer. R1 to R4 each are hydrogen, hydroxyl, substituted or unsubstituted monovalent hydrocarbon, organooxy, acyl or sulfonate group, excluding the case where all R1 to R4 are hydrogen atoms at the same time, and n is a positive number of 2-3,000.Type: GrantFiled: August 23, 2001Date of Patent: October 14, 2003Assignees: Nissan Chemical Industries, Ltd.Inventors: Junji Kido, Hiroyoshi Fukuro, Hitoshi Furusho, Tomoyuki Enomoto