Abstract: An automotive interior part includes a thermoplastic resin composition containing a prescribed acetone insoluble fraction (A) and a prescribed acetone soluble fraction (B), in which a content of the acetone insoluble fraction (A) is 5 to 18% by mass based on 100% by mass of a sum of the acetone insoluble fraction (A) and the acetone soluble fraction (B).

Abstract: An injection molded article obtained by injection molding a thermoplastic resin composition comprising 100 parts by mass of a thermoplastic resin and 50 parts by mass or less of at least one of a filler and a colored metallic pigment, wherein at least one weld exists, and a long diameter of 95% by mass or more of the filler existing within a cross-sectional depth of 50 ?m or less from a surface of the weld is parallel to the surface of the weld.

Abstract: An automotive interior parts includes a thermoplastic resin composition containing a prescribed acetone insoluble fraction (A) and a prescribed acetone soluble fraction (B), in which a content of the acetone insoluble fraction (A) is 5 to 18% by mass based on 100% by mass of a sum of the acetone insoluble fraction (A) and the acetone soluble fraction (B).

Abstract: An uncoated, highly reflective, impact-resistant injection-molded article which comprises a rubber ingredient (A) and a thermoplastic resin (B), characterized in that (1) the rubber ingredient (A) has been dispersed in the thermoplastic resin (B), (2) the rubber ingredient (A) has a coefficient of linear expansion of 12.5×10?5 to 19×10?5/° C., (3) the surface of the injection-molded article has a reflected-image clarity of 60-100%, and (4) the injection-molded article has a notched Charpy impact strength of 5-60 kJ/m2.

Abstract: The present invention is an uncoated housing in which a molded product formed from a thermoplastic resin composition (D) containing 20-60% by mass of an acetone insoluble resin component (A), which contains a rubber component (a) with an average particle size of 0.05-0.3 ?m and has a coefficient of linear expansion of 11×10?5-20.5×10?5, 40-80% by mass of an acetone soluble resin component (B) (here, (A)+(B)=100% by mass), and a colorant (C), with (1) the acetone soluble resin component (B) containing 6.0-45% by mass of an unsaturated nitrile monomer derived component and (2) 2-20% by mass of a component with a molecular weight of 70,000 or less by gel permeation chromatography (GPC) measurements being contained in the acetone soluble resin component (B). On the basis of JIS K7105, the L* value for this uncoated housing is 13 or less, the luster 60-120%, and the haze value 30-90%.

Abstract: A thermoplastic resin composition comprising: (A) a graft copolymer obtained by grafting, onto a rubber polymer, at least one monomer selected from the group consisting of an aromatic vinyl monomer, a vinyl cyanide monomer and other copolymerizable monomers; (B) a polymer obtained by polymerizing at least one monomer selected from the group consisting of an aromatic vinyl monomer, a vinyl cyanide monomer and other copolymerizable monomers; (C) an amorphous polyester; and (D) an aromatic polycarbonate, wherein the component (C) comprises a diol component, a 2,2,4,4-tetramethyl-1,3-cyclobutanediol (TMCD) residue is contained in an amount of 10 to 70 mol % and a 1,4-cyclohexanedimethanol (CHDM) residue is contained in an amount of 30 to 90 mol %, provided that the total mol % of the diol components is regarded as 100 mol %.

Abstract: A thermoplastic resin composition which contains (A) a graft copolymer that is obtained by grafting at least two kinds of monomers, which are selected from the group consisting of aromatic vinyl monomers, vinyl cyanide monomers and other copolymerizable monomers, onto a rubbery polymer, (B) a polymer that is obtained by polymerizing at least two kinds of monomers, which are selected from the group consisting of aromatic vinyl monomers, vinyl cyanide monomers and other copolymerizable monomers, and (C) a polyester that contains at least an alicyclic diol and an aromatic dicarboxylic acid. When the total of the components (A)-(C) is taken at 100% by mass, the component (A) is 15-50% by mass; and the component (A) has a linear expansion coefficient of from 12.5×10?5/° C. to 19×10?5/° C.

Abstract: Disclosed is a styrene-based resin composition that comprises 5-20 parts by mass of (D) a fire retardant per 100 parts by mass of a resin composition (1) that comprises 30-51 mass % of (A) a graft copolymer obtained by graft polymerization of a diene rubber polymer with an aromatic vinyl monomer and an unsaturated nitrile monomer, 10-55 mass % of (B) a copolymer comprising two or more monomers selected from among aromatic vinyl monomers, unsaturated nitrile monomers and unsaturated carboxylic acid alkyl ester monomers, and 15 to 39% by mass of a copolymer (C) comprising one kind of unsaturated carboxylic acid alkyl ester monomers, or two or more unsaturated carboxylic acid alkyl ester monomers, ((A)+(B)+(C)=100 mass %), wherein the diene rubber polymer constitutes 15-25 mass % of the resin composition (1).

Abstract: The present invention is an uncoated housing in which a molded product formed from a thermoplastic resin composition (D) containing 20-60% by mass of an acetone insoluble resin component (A), which contains a rubber component (a) with an average particle size of 0.05-0.3 ?m and has a coefficient of linear expansion of 11×10?5-20.5×10?5, 40-80% by mass of an acetone soluble resin component (B) (here, (A)+(B)=100% by mass), and a colorant (C), with (1) the acetone soluble resin component (B) containing 6.0-45% by mass of an unsaturated nitrile monomer derived component and (2) 2-20% by mass of a component with a molecular weight of 70,000 or less by gel permeation chromatography (GPC) measurements being contained in the acetone soluble resin component (B). On the basis of JIS K7105, the L* value for this uncoated housing is 13 or less, the luster 60-120%, and the haze value 30-90%.

Abstract: An injection molded article obtained by injection molding a thermoplastic resin composition comprising 100 parts by mass of a thermoplastic resin and 50 parts by mass or less of at least one of a filler and a colored metallic pigment, wherein at least one weld exists, and a long diameter of 95% by mass or more of the filler existing within a cross-sectional depth of 50 ?m or less from a surface of the weld is parallel to the surface of the weld.

Abstract: An uncoated, highly reflective, impact-resistant injection-molded article which comprises a rubber ingredient (A) and a thermoplastic resin (B), characterized in that (1) the rubber ingredient (A) has been dispersed in the thermoplastic resin (B), (2) the rubber ingredient (A) has a coefficient of linear expansion of 12.5×10?5 to 19×10?5/° C., (3) the surface of the injection-molded article has a reflected-image clarity of 60-100%, and (4) the injection-molded article has a notched Charpy impact strength of 5-60 kJ/m2.

Abstract: Disclosed is a styrene-based resin composition that comprises 5-20 parts by mass of (D) a fire retardant per 100 parts by mass of a resin composition (1) that comprises 30-51 mass % of (A) a graft copolymer obtained by graft polymerization of a diene rubber polymer with an aromatic vinyl monomer and an unsaturated nitrile monomer, 10-55 mass % of (B) a copolymer comprising two or more monomers selected from among aromatic vinyl monomers, unsaturated nitrile monomers and unsaturated carboxylic acid alkyl ester monomers, and 15 to 39% by mass of a copolymer (C) comprising one kind of unsaturated carboxylic acid alkyl ester monomers, or two or more unsaturated carboxylic acid alkyl ester monomers, ((A)+(B)+(C)=100 mass %), wherein the diene rubber polymer constitutes 15-25 mass % of the resin composition (1).

Abstract: Erasing is performed with respect to a nonvolatile memory cell without causing depletion halfway therethrough. A control circuit for reversibly and variably controlling the threshold voltage of the nonvolatile memory cell by electrical erasing and writing controls an erase process of performing erasing to the plurality of nonvolatile memory cells assigned to one unit in an erase operation, a first write process of performing writing to the nonvolatile memory cell exceeding a pre-write-back level before a depletion level, and a second write process of performing writing to the nonvolatile memory cell exceeding a write-back level after the first write process. Since the occurrence of depletion is suppressed by successively performing the first write process with respect to the nonvolatile memory cells which may exceed the depletion level in the erase process, erasing can be performed to the nonvolatile memory cell without causing depletion halfway therethrough.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: A non-volatile storage device (1) has non-volatile memory units (FARY0 to FARY3), buffer units (BMRY0 to BMRY3) and a control unit (CNT), and the control unit can control a first access processing between an outside and the buffer unit and a second access processing between the non-volatile memory unit and the buffer unit upon receipt of directives from the outside separately from each other. The control unit can independently carry out an access control over the non-volatile memory unit and the buffer unit in accordance with the directives sent from the outside, respectively. Therefore, it is possible to set up next write data to the buffer unit simultaneously with the erase operation of the non-volatile memory unit or to output once read storage information to the buffer unit at a high speed as in a cache memory operation in accordance with the directive sent from the outside.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: Erasing is performed with respect to a nonvolatile memory cell without causing depletion halfway therethrough. A control circuit for reversibly and variably controlling the threshold voltage of the nonvolatile memory cell by electrical erasing and writing controls an erase process of performing erasing to the plurality of nonvolatile memory cells assigned to one unit in an erase operation, a first write process of performing writing to the nonvolatile memory cell exceeding a pre-write-back level before a depletion level, and a second write process of performing writing to the nonvolatile memory cell exceeding a write-back level after the first write process. Since the occurrence of depletion is suppressed by successively performing the first write process with respect to the nonvolatile memory cells which may exceed the depletion level in the erase process, erasing can be performed to the nonvolatile memory cell without causing depletion halfway therethrough.

Abstract: Erasing is performed with respect to a nonvolatile memory cell without causing depletion halfway therethrough. A control circuit for reversibly and variably controlling the threshold voltage of the nonvolatile memory cell by electrical erasing and writing controls an erase process of performing erasing to the plurality of nonvolatile memory cells assigned to one unit in an erase operation, a first write process of performing writing to the nonvolatile memory cell exceeding a pre-write-back level before a depletion level, and a second write process of performing writing to the nonvolatile memory cell exceeding a write-back level after the first write process. Since the occurrence of depletion is suppressed by successively performing the first write process with respect to the nonvolatile memory cells which may exceed the depletion level in the erase process, erasing can be performed to the nonvolatile memory cell without causing depletion halfway therethrough.

Abstract: A non-volatile storage device (1) has non-volatile memory units (FARY0 to FARY3), buffer units (BMRY0 to BMRY3) and a control unit (CNT), and the control unit can control a first access processing between an outside and the buffer unit and a second access processing between the non-volatile memory unit and the buffer unit upon receipt of directives from the outside separately from each other. The control unit can independently carry out an access control over the non-volatile memory unit and the buffer unit in accordance with the directives sent from the outside, respectively. Therefore, it is possible to set up next write data to the buffer unit simultaneously with the erase operation of the non-volatile memory unit or to output once read storage information to the buffer unit at a high speed as in a cache memory operation in accordance with the directive sent from the outside.