Patents by Inventor Tomoyuki Kitani
Tomoyuki Kitani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9431588Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.Type: GrantFiled: September 16, 2014Date of Patent: August 30, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Kazuo Shimokawa, Takashi Koyanagawa, Takeshi Miyagi, Akihiko Happoya, Kazuhito Higuchi, Tomoyuki Kitani
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Publication number: 20150001571Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.Type: ApplicationFiled: September 16, 2014Publication date: January 1, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuo SHIMOKAWA, Takashi Koyanagawa, Takeshi Miyagi, Akihiko Happoya, Kazuhito Higuchi, Tomoyuki Kitani
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Patent number: 8906716Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.Type: GrantFiled: September 11, 2013Date of Patent: December 9, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Kazuo Shimokawa, Takashi Koyanagawa, Takeshi Miyagi, Akihiko Happoya, Kazuhito Higuchi, Tomoyuki Kitani
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Publication number: 20140008688Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.Type: ApplicationFiled: September 11, 2013Publication date: January 9, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Kazuo Shimokawa, Takashi Koyanagawa, Takeshi Miyagi, Akihiko Happoya, Kazuhito Higuchi, Tomoyuki Kitani
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Patent number: 8581291Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.Type: GrantFiled: September 9, 2009Date of Patent: November 12, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Kazuo Shimokawa, Takashi Koyanagawa, Takeshi Miyagi, Akihiko Happoya, Kazuhito Higuchi, Tomoyuki Kitani
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Publication number: 20130078766Abstract: A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; and forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices.Type: ApplicationFiled: November 14, 2012Publication date: March 28, 2013Inventors: Takao NOGI, Tomoyuki KITANI, Akira TOJO, Kentaro SUGA
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Patent number: 8378479Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating maType: GrantFiled: July 21, 2011Date of Patent: February 19, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Akira Tojo, Tomoyuki Kitani, Kazuhito Higuchi, Masako Fukumitsu, Tomohiro Iguchi, Hideo Nishiuchi, Kyoto Kato
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Patent number: 8334173Abstract: A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separateType: GrantFiled: January 27, 2010Date of Patent: December 18, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Takao Nogi, Tomoyuki Kitani, Akira Tojo, Kentaro Suga
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Patent number: 8193643Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a semiconductor element, a first electrode of the semiconductor chip being configured on a first surface of the semiconductor element, a second electrode of the semiconductor element being configured on a second surface opposed to the first surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, a first hole and a second hole being configured in the encapsulating material, a portion of the first electrode and a portion of the second electrode being exposed, a first conductive material being connected to the first surface of the semiconductor chip via the first hole, a second conductive material being connected to the second surface of the semiconductor chip via the second hole, and a plating film covering five surfaces of the first conductive material other than one surface contacting with the encapsulating material and five surfaces ofType: GrantFiled: August 25, 2009Date of Patent: June 5, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Akira Tojo, Tomoyuki Kitani, Tomohiro Iguchi, Takahiro Aizawa, Hideo Nishiuchi, Masako Fukumitsu
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Publication number: 20110272817Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating maType: ApplicationFiled: July 21, 2011Publication date: November 10, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akira TOJO, Tomoyuki KITANI, Kazuhito HIGUCHI, Masako FUKUMITSU, Tomohiro IGUCHI, Hideo NISHIUCHI, Kyoko KATO
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Patent number: 8008773Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating maType: GrantFiled: September 3, 2009Date of Patent: August 30, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Akira Tojo, Tomoyuki Kitani, Kazuhito Higuchi, Masako Fukumitsu, Tomohiro Iguchi, Hideo Nishiuchi, Kyoko Kato
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Publication number: 20110186982Abstract: According to one embodiment, a surface mount diode including a diode chip including a first main surface and a second main surface, a cathode electrode including a first internal electrode portion on the first main surface and a first external electrode portion on the first internal electrode portion, an anode electrode including a second internal electrode portion on the second main surface and a second external electrode portion on the second internal electrode portion, a thickness of the second external electrode portion being the same as a thickness of the first external electrode portion, a first covering member covering a periphery surface of one of the internal electrode portions and a periphery surface of the diode chip, and a second covering member covering a periphery surface of the other of the internal electrode portions, the second covering member being different in color from the first covering member.Type: ApplicationFiled: January 28, 2011Publication date: August 4, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoyuki KITANI, Akira TOJO, Takao NOGI, Kazuhito HIGUCHI, Tomohiro IGUCHI, Masako FUKUMITSU, Susumu OBATA, Yusaku ASANO
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Publication number: 20100233856Abstract: A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separateType: ApplicationFiled: January 27, 2010Publication date: September 16, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Takao NOGI, Tomoyuki Kitani, Akira Tojo, Kentaro Suga
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Publication number: 20100140640Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.Type: ApplicationFiled: September 9, 2009Publication date: June 10, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuo SHIMOKAWA, Takashi KOYANAGAWA, Takeshi MIYAGI, Akihiko HAPPOYA, Kazuhito HIGUCHI, Tomoyuki KITANI
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Publication number: 20100052185Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a semiconductor element, a first electrode of the semiconductor chip being configured on a first surface of the semiconductor element, a second electrode of the semiconductor element being configured on a second surface opposed to the first surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, a first hole and a second hole being configured in the encapsulating material, a portion of the first electrode and a portion of the second electrode being exposed, a first conductive material being connected to the first surface of the semiconductor chip via the first hole, a second conductive material being connected to the second surface of the semiconductor chip via the second hole, and a plating film covering five surfaces of the first conductive material other than one surface contacting with the encapsulating material and five surfaces ofType: ApplicationFiled: August 25, 2009Publication date: March 4, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akira TOJO, Tomoyuki Kitani, Tomohiro Iguchi, Takahiro Aizawa, Hideo Nishiuchi, Masako Fukumitsu
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Publication number: 20100052142Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating maType: ApplicationFiled: September 3, 2009Publication date: March 4, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akira Tojo, Tomoyuki Kitani, Kazuhito Higuchi, Masako Fukumitsu, Tomohiro Iguchi, Hideo Nishiuchi, Kyoko Kato
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Patent number: 7656034Abstract: A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.Type: GrantFiled: September 11, 2008Date of Patent: February 2, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Tomohiro Iguchi, Hideo Nishiuchi, Kazuhito Higuchi, Tomoyuki Kitani
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Publication number: 20090209065Abstract: An example of the invention is a method of manufacturing a semiconductor device including, pressing a part of the connection conductor having a plate-like shape or a belt-like shape against a lead terminal which is formed on a lead frame, is formed into a thin and long plate-like shape, and is supported only at one end in a longitudinal direction of the terminal, in such a manner that the part of the conductor is brought into contact with the lead terminal, and applying ultrasonic vibration substantially in the longitudinal direction in a plane perpendicular to the pressing direction to the connection conductor in the state where the part of the connection conductor is pressed against the lead terminal.Type: ApplicationFiled: February 9, 2009Publication date: August 20, 2009Inventors: Hideo NISHIUCHI, Tomohiro Iguchi, Tomoyuki Kitani, Takahiro Aizawa, Masako Fukumitsu, Akira Tojo
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Publication number: 20090072395Abstract: A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.Type: ApplicationFiled: September 11, 2008Publication date: March 19, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomohiro IGUCHI, Hideo NISHIUCHI, Kazuhito HIGUCHI, Tomoyuki KITANI
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Publication number: 20080250847Abstract: A detector for detecting a gaseous component in a gas is comprised of a sensor having a gas detecting region configured to output an electric signal in response to detection of the gaseous component and a contact portion configured to conduct the electric signal; an enclosure housing the sensor and having a through hole configured to introduce the gas to the gas detecting region; a wiring partly facing to the contact portion and being led out of the enclosure; an electric conductor interposed between the contact portion and the wiring; a packing member surrounding the through hole and so as to make a gap between the sensor and the enclosure impervious to the gas.Type: ApplicationFiled: April 3, 2008Publication date: October 16, 2008Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Tomoyuki KITANI, Miyuki Takenaka, Mitsuhiro Oki, Masami Okamura