Patents by Inventor Tomoyuki Miyoshi

Tomoyuki Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240274708
    Abstract: A MOS control diode obtained by adding a MOS control function to a PN diode, comprises: a semiconductor substrate having a PN junction diode that consists of a conductivity-type drift layer and a conductivity-type anode layer; a first conductivity-type well layer on the anode layer; a second conductivity-type low-concentration source layer on the well layer; a second conductivity-type high-concentration source layer only on a portion of the low-concentration source layer; gate electrodes that are located adjacent to, by way of gate oxide films, the anode layer, the well layer, and the low-concentration source layer, and that constitutes a MOSFET; an insulating film that covers the anode layer, the low-concentration and high-concentration source layers, and the gate electrodes; and a contact hole that penetrates the insulating film, the well layer, and the low-concentration and high-concentration source layers.
    Type: Application
    Filed: June 27, 2022
    Publication date: August 15, 2024
    Applicant: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tomoyasu Furukawa, Tomoyuki Miyoshi
  • Publication number: 20220278194
    Abstract: A semiconductor device having a high cutoff resistance capable of suppressing local current/electric field concentration and current concentration at a chip termination portion due to an electric field variation between IGBT cells due to a shape variation and impurity variation during manufacturing. The semiconductor device is characterized by including an emitter electrode formed on a front surface of a semiconductor substrate via an interlayer insulating film, a collector electrode formed on a back surface of the semiconductor substrate, a first semiconductor layer of a first conductivity type in contact with the collector electrode, a second semiconductor layer of a second conductivity type, a central area cell, and an outer peripheral area cell located outside the central area cell.
    Type: Application
    Filed: April 22, 2020
    Publication date: September 1, 2022
    Applicant: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tomoyasu Furukawa, Masaki Shiraishi, So Watanabe, Tomoyuki Miyoshi, Yujiro Takeuchi
  • Patent number: 11296212
    Abstract: A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: April 5, 2022
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tomoyuki Miyoshi, Mutsuhiro Mori, Tomoyasu Furukawa, Yujiro Takeuchi, Masaki Shiraishi
  • Patent number: 11282937
    Abstract: The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: March 22, 2022
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Mutsuhiro Mori, Tomoyuki Miyoshi, Tomoyasu Furukawa, Masaki Shiraishi
  • Publication number: 20210091217
    Abstract: A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.
    Type: Application
    Filed: February 1, 2019
    Publication date: March 25, 2021
    Inventors: Tomoyuki MIYOSHI, Mutsuhiro MORI, Tomoyasu FURUKAWA, Yujiro TAKEUCHI, Masaki SHIRAISHI
  • Publication number: 20210057537
    Abstract: The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.
    Type: Application
    Filed: February 1, 2019
    Publication date: February 25, 2021
    Inventors: Mutsuhiro MORI, Tomoyuki MIYOSHI, Tomoyasu FURUKAWA, Masaki SHIRAISHI
  • Patent number: 10916643
    Abstract: To provide a semiconductor device in which an IGBT having two gate terminals is driven by one control signal, and a continuous ON state and an ON state twice for one on-pulse signal are avoided. A semiconductor device includes: a control signal input terminal; an IGBT having a first gate terminal and a second gate terminal; a delay unit configured to delay an input signal for a delay time; and a logical product unit configured to calculate a logical product of a first input terminal and a second input terminal. The control signal input terminal is connected to an input terminal of the delay unit and a second input terminal of the logical product unit. An output terminal of the delay unit is connected to the first gate terminal of the IGBT and a first input terminal of the logical product unit. An output terminal of the logical product unit is connected to the second gate terminal of the IGBT.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: February 9, 2021
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Yujiro Takeuchi, Yusuke Hotta, Tomoyuki Miyoshi, Mutsuhiro Mori
  • Publication number: 20200395471
    Abstract: To provide a semiconductor device in which an IGBT having two gate terminals is driven by one control signal, and a continuous ON state and an ON state twice for one on-pulse signal are avoided. A semiconductor device includes: a control signal input terminal; an IGBT having a first gate terminal and a second gate terminal; a delay unit configured to delay an input signal for a delay time; and a logical product unit configured to calculate a logical product of a first input terminal and a second input terminal. The control signal input terminal is connected to an input terminal of the delay unit and a second input terminal of the logical product unit. An output terminal of the delay unit is connected to the first gate terminal of the IGBT and a first input terminal of the logical product unit. An output terminal of the logical product unit is connected to the second gate terminal of the IGBT.
    Type: Application
    Filed: October 29, 2018
    Publication date: December 17, 2020
    Inventors: Yujiro TAKEUCHI, Yusuke HOTTA, Tomoyuki MIYOSHI, Mutsuhiro MORI
  • Patent number: 9293578
    Abstract: Adverse effects can be hardly exerted on a current performance of an LDMOSFET to suppress the amount of carrier implantation from an anode layer of an LDMOS parasitic diode, and improve a reverse recovery withstand of the parasitic diode. The LDMOSFET includes a semiconductor substrate having a first semiconductor region formed of a feeding region of a first conductivity type at a position where a field oxide film is not present on a surface layer of a semiconductor region in which the field oxide film is selectively formed, and a second semiconductor region formed of a well region of a second conductivity type which is an opposite conductivity type, and feeding regions of the first conductivity type and the second conductivity type formed on an upper layer of the well region, and a gate electrode that faces the well region through a gate oxide film.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: March 22, 2016
    Assignee: Hitachi, Ltd.
    Inventors: Tomoyuki Miyoshi, Takayuki Oshima, Yohei Yanagida, Hiroki Kimura, Kenji Miyakoshi
  • Publication number: 20150041883
    Abstract: An object of the present invention is to improve the ESD resistance of an electrostatic protection element. The essence of the basic idea resides in that an electrostatic protection element ESD is configured to include not a thyristor or an npn bipolar transistor, but a pnp bipolar transistor so as to be connected in parallel with a diode. In other words, the essence of the basic idea resides in that an electrostatic protection element ESD is constituted by a diode parasitically provided with a pnp bipolar transistor.
    Type: Application
    Filed: August 6, 2014
    Publication date: February 12, 2015
    Inventors: Hiroki Kimura, Youhei Yanagida, Kenji Miyakoshi, Tomoyuki Miyoshi, Takayuki Ooshima
  • Publication number: 20150028385
    Abstract: The disclosed lateral bipolar transistor is manufactured by a manufacturing process of self-alignedly implanting an impurity to a gate electrode and thermally diffusing the impurity to form a base layer and an emitter layer. The gate electrode is utilized as an independent fourth terminal in addition to base, emitter, and collector terminals, whereby hfe can be controlled and enhanced by a gate potential. Accordingly, the present invention can provide a bipolar transistor that is hardly affected by a manufacturing variation, or that can be corrected by the gate terminal, and that has a high gain.
    Type: Application
    Filed: July 29, 2014
    Publication date: January 29, 2015
    Inventors: Tomoyuki Miyoshi, Takayuki Ooshima, Youhei Yanagida
  • Patent number: 8777593
    Abstract: An electric compressor is installed in a vehicle and includes a shell. The electric compressor includes an inverter, a cover, and a conductive component. The cover covers the shell and the inverter. The conductive component is electrically connected to the inverter and arranged outside the cover. The cover includes an outer guide surface inclined relative to a forward direction of the vehicle. The outer guide surface has a normal including a forward component directed in the forward direction. The outer guide surface is arranged closer to an outer side of the vehicle than the conductive component.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: July 15, 2014
    Assignees: Kabushiki Kaisha Toyota Jidoshokki, Toyota Jidosha Kabushiki Kaisha
    Inventors: Yusuke Kinoshita, Yumin Hishinuma, Kazuhiro Kuroki, Tetsuhiko Fukanuma, Tomoyuki Miyoshi, Yasushi Kato, Yuji Nakane
  • Publication number: 20140015049
    Abstract: An LDMOSFET includes a semiconductor substrate having a first semiconductor region formed of a feeding region of a first conduction type at a position where a field oxide film is not present on a surface layer of a semiconductor region in which the field oxide film is selectively formed, and a second semiconductor region formed of a well region of a second conduction type which is an opposite conduction type, and feeding regions of the first and second conduction types formed on an upper layer of the well region, and a gate electrode that faces the well region through a gate oxide film. The feeding region is formed at a distance from the field oxide film in an end portion in a longitudinal direction, and desirably the feeding region is intermittently formed at given intervals in the longitudinal direction, and the feeding region is applied to the first semiconductor region.
    Type: Application
    Filed: July 3, 2013
    Publication date: January 16, 2014
    Inventors: Tomoyuki Miyoshi, Takayuki Oshima, Yohei Yanagida, Hiroki Kimura, Kenji Miyakoshi
  • Patent number: 8546213
    Abstract: A high voltage ESD protective diode having high avalanche withstand capability and capable of being formed by using manufacturing steps identical with those for a high voltage transistor to be protected, the device having a structure in which a gate oxide film is formed over a substrate surface at a PN junction formed of an N type low concentration semiconductor substrate constituting a cathode region and a P type low concentration diffusion region constituting an anode region, and a gate electrode which is disposed overriding the gate oxide film and a field oxide film is connected electrically by way of a gate plug with an anode electrode, whereby an electric field at the PN junction is moderated upon avalanche breakdown to obtain a high avalanche withstand capability. Further, the withstand voltage can be adjusted by changing the length of the field oxide film.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: October 1, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Tomoyuki Miyoshi, Shinichiro Wada, Yohei Yanagida
  • Patent number: 8525291
    Abstract: The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: September 3, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Tomoyuki Miyoshi, Shinichiro Wada, Yohei Yanagida
  • Publication number: 20120256291
    Abstract: The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.
    Type: Application
    Filed: June 13, 2012
    Publication date: October 11, 2012
    Inventors: Tomoyuki MIYOSHI, Shinichiro Wada, Yohei Yanagida
  • Patent number: 8217425
    Abstract: The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: July 10, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Tomoyuki Miyoshi, Shinichiro Wada, Yohei Yanagida
  • Publication number: 20110278669
    Abstract: Disclosed is a high-voltage diode structure which realizes high reverse recovery capability and high maximum allowable forward current. The distance between a longitudinal end of a p well layer in an anode region and an element isolation region formed to surround the diode is 5 ?m or shorter so as to allow a depletion layer to reach the element isolation region when a maximum rated reverse voltage is applied. During reverse recovery, the electric field strength at an end portion of a p well layer is reduced, hole current is reduced, and local temperature rises are reduced.
    Type: Application
    Filed: May 11, 2011
    Publication date: November 17, 2011
    Inventors: Tomoyuki MIYOSHI, Shinichiro Wada, Takayuki Oshima, Yohei Yanagida, Takahiro Fujita
  • Publication number: 20110243771
    Abstract: An electric compressor is installed in a vehicle and includes a shell. The electric compressor includes an inverter, a cover, and a conductive component. The cover covers the shell and the inverter. The conductive component is electrically connected to the inverter and arranged outside the cover. The cover includes an outer guide surface inclined relative to a forward direction of the vehicle. The outer guide surface has a normal including a forward component directed in the forward direction. The outer guide surface is arranged closer to an outer side of the vehicle than the conductive component.
    Type: Application
    Filed: March 25, 2011
    Publication date: October 6, 2011
    Applicants: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yusuke KINOSHITA, Yumin Hishinuma, Kazuhiro Kuroki, Tetsuhiko Fukanuma, Tomoyuki Miyoshi, Yasushi Kato, Yuji Nakane
  • Publication number: 20110140199
    Abstract: A high voltage ESD protective diode having high avalanche withstand capability and capable of being formed by using manufacturing steps identical with those for a high voltage transistor to be protected, the device having a structure in which a gate oxide film is formed over a substrate surface at a PN junction formed of an N type low concentration semiconductor substrate constituting a cathode region and a P type low concentration diffusion region constituting an anode region, and a gate electrode which is disposed overriding the gate oxide film and a field oxide film is connected electrically by way of a gate plug with an anode electrode, whereby an electric field at the PN junction is moderated upon avalanche breakdown to obtain a high avalanche withstand capability. Further, the withstand voltage can be adjusted by changing the length of the field oxide film.
    Type: Application
    Filed: December 7, 2010
    Publication date: June 16, 2011
    Inventors: Tomoyuki MIYOSHI, Shinichiro Wada, Yohei Yanagida