Abstract: The present invention relates to a microchip apparatus using liquids. More specifically, the invention provides a liquid mixing apparatus comprising at least two microchannels for introducing liquids and a mixing microchannel that connects to the at least two liquid-introducing microchannels, wherein the liquids are transported from the respective liquid-introducing microchannels toward the mixing microchannel, the apparatus further comprising means for enhancing the mixing of the liquids that converge in the mixing microchannel. The invention also provides an electrophoretic apparatus and a microchip electrophoretic apparatus for denaturing gradient gel electrophoresis.

Abstract: The invention relates generally to the field of treating a nucleic acid. More particularly, the invention provides a method for amplifying a nucleic acid and an apparatus for amplifying a nucleic acid, as well as method and apparatus for synthesizing nucleic acid to be used for the amplification.

Abstract: An activation energy ray-sensitive composition permitting development with neutral water. Provided is an activation energy ray-sensitive composition characterized by comprising a dispersion which comprises an aqueous solution of a water-soluble resin, and an acid former dispersed in the aqueous solution in the form of fine powder, the acid former being insoluble or sparingly soluble in water and generating an acid by the action of activation energy rays, and an acid-reactive insolubilizing agent dissolved or dispersed in the dispersion and insolubilizing the water-soluble resin by the action of the acid.

Abstract: The present invention relates to a microchip apparatus using liquids. More specifically, the invention provides a liquid mixing apparatus comprising at least two microchannels for introducing liquids and a mixing microchannel that connects to the at least two liquid-introducing microchannels, wherein the liquids are transported from the respective liquid-introducing microchannels toward the mixing microchannel, the apparatus further comprising means for enhancing the mixing of the liquids that converge in the mixing microchannel. The invention also provides an electrophoretic apparatus and a microchip electrophoretic apparatus for denaturing gradient gel electrophoresis.

Abstract: The present invention is to provide a fluorine-containing polymer having excellent light transmission in the vacuum ultraviolet region of not more than 193 nm, a monomer favorably used for preparing the fluorine-containing polymer, a process for preparing the fluorine-containing polymer, and uses of the fluorine-containing polymer. The fluorine-containing polymer has at least a repeated unit structure represented by the following formula (1) and has an absorption coefficient of not more than 3.0 ?m?1 at 157 nm of ultraviolet rays. wherein R1 to R12 are each fluorine, a fluorine-containing alkyl group of 1 to 20 carbon atoms, or the like; X1 is —CRaRb—, —NRa— or —PRa— (Ra and Rb are each fluorine, a fluorine-containing alkyl group of 1 to 20 carbon atoms, hydrogen, —O—, —S—, an alkyl group of 1 to 20 carbon atoms, or the like); at least one of R1 to R12 and X1 is fluorine or a fluorine-containing group; and n is 0 or an integer of 1 to 3.

Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating film having a opening, forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface, plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. Accordingly, the method can decrease a contact resistance of the tungsten interconnection in a contact hole.

Abstract: A method of manufacturing a semiconductor device, according to the present invention comprises a step for forming an insulating film over a semiconductor wafer and thereafter subjecting the same to photolithography and etching to thereby define a contact hole, a step for forming an adhesive layer over the insulating film with the contact hole defined therein, a step for placing the interior of a processing chamber under an atmosphere uncontaining oxygen and subjecting the adhesive layer to heat treatment, a step for setting the temperature of the semiconductor wafer to less than or equal to a temperature equivalent to energy of such an extent as to cut the bonding between atoms which form the adhesive layer and thereafter taking the semiconductor wafer out of the processing chamber, and a step for forming an embedding film to be embedded in the contact hole.

Abstract: The present invention is to provide a fluorine-containing polymer having excellent light transmission in the vacuum ultraviolet region of not more than 193 nm, a monomer favorably used for preparing the fluorine-containing polymer, a process for preparing the fluorine-containing polymer, and uses of the fluorine-containing polymer. The fluorine-containing polymer has at least a repeated unit structure represented by the following formula (1) and has an absorption coefficient of not more than 3.0 &mgr;m−1 at 157 nm of ultraviolet rays.

Abstract: A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating film having a opening, forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface, plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. Accordingly, the method can decrease a contact resistance of the tungsten interconnection in a contact hole.

Abstract: A method of manufacturing a semiconductor device, according to the present invention comprises a step for forming an insulating film over a semiconductor wafer and thereafter subjecting the same to photolithography and etching to thereby define a contact hole, a step for forming an adhesive layer over the insulating film with the contact hole defined therein, a step for placing the interior of a processing chamber under an atmosphere uncontaining oxygen and subjecting the adhesive layer to heat treatment, a step for setting the temperature of the semiconductor wafer to less than or equal to a temperature equivalent to energy of such an extent as to cut the bonding between atoms which form the adhesive layer and thereafter taking the semiconductor wafer out of the processing chamber, and a step for forming an embedding film to be embedded in the contact hole.

Abstract: A method of manufacturing a semiconductor device, according to the present invention comprises a step for forming an insulating film over a semiconductor wafer and thereafter subjecting the same to photolithography and etching to thereby define a contact hole, a step for forming an adhesive layer over the insulating film with the contact hole defined therein, a step for placing the interior of a processing chamber under an atmosphere uncontaining oxygen and subjecting the adhesive layer to heat treatment, a step for setting the temperature of the semiconductor wafer to less than or equal to a temperature equivalent to energy of such an extent as to cut the bonding between atoms which form the adhesive layer and thereafter taking the semiconductor wafer out of the processing chamber, and a step for forming an embedding film to be embedded in the contact hole.