Abstract: A digital camera includes: a mirror box that defines a space in which a light flux from a photographic lens is guided to an imaging unit; a mirror unit that is arranged inside the mirror box and is configured to rotate between a viewing position in which the mirror unit is inserted in a photographic light path from the photographic lens to the imaging unit to reflect the light flux and a photographing position in which the mirror unit is retracted from the photographic light path; and an opening section that discharges from the mirror box air that is moved when the mirror unit is rotated.

Abstract: There is provided a method of producing a semiconductor wafer by thermally processing a base water having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to he thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.

Abstract: A semiconductor wafer including: a base wafer; a seed crystal disposed on the base wafer; a compound semiconductor disposed above the seed crystal; and a high resistance layer disposed between the seed crystal and the compound semiconductor, the high resistance layer having a larger resistivity than the seed crystal, and the seed crystal lattice matching or pseudo lattice matching the compound semiconductor is provided.

Abstract: There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that has a single-crystal layer and is to be subjected to thermal processing and a portion to be protected that is to be protected from heal, to be added during the thermal processing. The method comprises a step of forming, above the portion to be protected, a protective layer for protecting the portion to be protected from an electromagnetic wave to be applied to the base wafer, and a step of annealing the portion to be thermally processed, by applying the electromagnetic wave to the entire base wafer.

Abstract: A device forming thin film for forming a semiconductor device; an inhibition portion that surrounds the device forming thin film and inhibits growth of a precursor of the device forming thin film into a crystal; a sacrificial growth portion that is formed by causing the precursor to sacrificially grow into a crystal, and is positioned around the device forming thin film separated by the inhibition portion; and a protection film that covers a top portion of the sacrificial growth portion and exposes a top portion of the device forming thin film are included. The protection film may be made of polyimide.

Abstract: A transmitting device is provided that generates OFDM symbols by identifying a sampling frequency of input data that is input from an external device, determining a number of inverse Fourier transform sample points and a number of sampling points of a redundant data portion in accordance with the identified sampling frequency, and subjecting the input data to OFDM modulation using the determined number of sampling points. The transmitting device then transmits the generated OFDM symbols.

Abstract: The parent station or a child station that transmits a pilot symbol is assigned to a pilot symbol transmission slot within a TDMA frame in a parent station or plurality of child stations for communicating using TDMA. The assigned parent station or child station transmits a pilot symbol using the pilot symbol transmission slot.

Abstract: An image-capturing element that receives light of a subject image entering within a camera body through an interchangeable photographic lens is packaged and is mounted at the camera body via a holder. A camera-side mounting surface and a holder-side mounting surface are machined in advance and formed respectively relative to the mounting surface for the photographic lens formed at the camera body and the light-receiving surface of the image-capturing element. By mounting the image-capturing apparatus with the camera-side mounting surface and the holder-side mounting surface placed in contact with each other at the camera body using screws, the light-receiving surface is aligned with the image-forming position of the photographic lens.

Abstract: A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; a butler layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be shaped as an island having a size that does not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal defects when the Ge layer is annealed at a certain temperature.

Abstract: A high-quality GaAs-type crystal thin film using an inexpensive Si water with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects.

Abstract: A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be shaped as an island having a size that docs not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal dejects when the Ge layer is annealed at a certain temperature.

Abstract: The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that includes an open portion reaching the silicon wafer and having an aspect ratio of ?3/3 or more; a seed compound semiconductor crystal that is formed in the open portion and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.

Abstract: A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved.

Abstract: The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a Ge crystal formed in the open portion; a seed compound semiconductor crystal that is grown with the Ge crystal as a nucleus and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.

Abstract: A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.

Abstract: In an information processing apparatus which is equipped with plural storage devices, there are provided a security information comparison unit for, in a case where data is moved from a movement source storage device to a movement destination storage device, comparing security information of the movement source storage device with security information of the movement destination storage device, and a data movement control unit for controlling the movement of the data based on a comparison result by the security information comparison unit. Thus, it is possible to strongly secure safety with respect to the movement and/or copy of the data among the storage devices by a user.

Abstract: A burst signal generator generates a burst signal that is a variable length portion whose length changes in accordance with fluctuations in data input at a predetermined period. An OFDM modulator generates an OFDM signal (including a guard interval portion and an effective symbol portion) that is a fixed length portion containing data corresponding to n (n is a positive integer) times or 1/n of the predetermined period. A frame includes the variable length portion and the fixed length portion. This makes a transmission signal actually have a frame period almost equal to the period of a signal synchronized with the clock of a player, including the fluctuations.

Abstract: A removable hard disk drive is detachable from a computer apparatus, and includes a storage medium for storing data from the computer apparatus and a communication interface with the computer apparatus. Upon reception of eject instruction issued by the computer apparatus, the removable hard disk drive writes contents cashed in a cache memory into a disk, and shifts to an ejectable state. Upon the completion of the shift to the ejectable state, the removable hard disk drive externally outputs an eject signal. A microprocessor which controls an eject mechanism executes removable hard disk cartridge eject operation in response to the eject signal.

Abstract: A method of controlling communication in a communication system includes a plurality of communication devices and a controller that transmits multi-channel data to the plurality of communication devices, executed in a communication device group to which power is supplied without passing through the controller, the method comprising the steps of determining a master communication device in the communication device group that sends the multi-channel data received wirelessly from the controller to other communication device included in the communication device group, according to wireless connection conditions between the controller and each communication device included in the communication device group, and sending, by the master via a wired connection, the multi-channel data received wirelessly from the controller to the other communication device included in the communication device group.

Abstract: A Group III-V compound semiconductor includes an n-type layer, a p-type layer, a p-type layer represented by a formula InaGabAlcN, having a thickness of not less than 300 nm, and a multiple quantum well structure which exists between the n-type layer and the p-type layer, has at least two quantum well structures including two barrier layers and a quantum well layer represented by a formula InxGayAlzN between the barrier layers; and a ratio of R/? of not more than 42.5%, wherein R is an average mole fraction of indium nitride in the quantum well layer, which is measured by X-ray diffraction, and ? is a mole fraction of indium nitride calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection.