Abstract: A unit for minimizing the problem that affects a substrate to be processed at the time of turning off a plasma is provided in a plasma processing apparatus using a magnetic field. The plasma processing apparatus comprises: a plasma-generating high-frequency power supply; a bias power supply; and a coil power supply which is connected to a coil disposed outside a vacuum process chamber and generates a magnetic field inside the vacuum process chamber, and the plasma processing apparatus further comprises: a magnetic field measuring unit which measures a magnetic field strength inside the vacuum process chamber; and a control unit which turns off an output on/off signal of the plasma-generating high-frequency power supply or the bias power supply when a magnetic field strength, which is measured after an output on/off signal of the coil power supply is turned off, decays to a predetermined value.

Abstract: A radiation detecting apparatus includes a sensor panel 100, a phosphor layer 111 formed on the sensor panel 100 to convert a radiation into light, and a phosphor protecting member 110 covering the phosphor layer 111 to adhere closely to the phosphor protecting member 110. The phosphor protecting member 110 includes a phosphor protecting layer 116 made of vapor deposition polymerization polyimide formed by vapor deposition polymerization, a reflecting layer 113 reflecting the light converted by the phosphor layer 111, and a protecting layer 117 made of vapor deposition polymerization polyurea formed by the vapor deposition polymerization. By such a configuration, a polymerization reaction of the phosphor protecting layer 116 is performed on the substrate. Thereby, the generation of by-products is suppressed to make it easy to acquire the uniformity of film quality.

Abstract: A radiation detecting apparatus includes a substrate 1, a scintillator layer 7 converting a radiation into light, and scintillator protection members 8, 9 and 10 to cover the scintillator layer 7, wherein the scintillator protection member includes a scintillator protection layer 8 consisting of a hot-melt resin, and the scintillator protection layer 8 touches the scintillator layer 7. As the substrate 1, there is provided a sensor panel including a photoreceiving layer 15 on which photoelectric conversion elements 2, receiving light, are arranged in a two-dimension array, and a protection layer 5 provided on the photoreceiving layer 15 and touching the scintillator layer 7 and the scintillator protection layer 8. By using such a scintillator protection layer, a film formation time of the scintillator protection layer can be shortened, and the film thickness dispersion of the scintillator protection layer can be suppressed.

Abstract: A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.

Abstract: The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device having a plasma source capable of controlling plasma distribution, the shape of a sheath/bulk boundary above the wafer is controlled to a convexed shape when the plasma is turned on and off. By adding a step of applying a low source power and wafer bias power when the plasma is turned on and off in order to realize an out-high plasma distribution, it is possible to form a sheath that is thicker near the center of the wafer and thinner at the outer circumference portion thereof.

Abstract: A radiation detection apparatus including a sensor panel, having a photoreceiving unit constituted of plural photoelectric converting elements two-dimensionally arranged on a substrate and electrical connecting portions provided in an external portion of the photoreceiving unit and electrically connected to the photoelectric converting elements of respective rows or columns of the photoreceiving unit, a phosphor layer provided at least on the photoreceiving unit for converting a radiation into a light detectable by the photoelectric converting element, and a phosphor protective member covering the phosphor layer and in contact with the sensor panel, characterized in that the phosphor protective member includes a frame member provided between the phosphor layer and the electric connecting portion on the sensor panel, and a phosphor protective layer covering an upper surface of the phosphor layer and provided in close contact with an upper surface of the frame member.

Abstract: There are provided a scintillator (130) comprising a structure in which a plurality of scintillator layers (131, 132, 135) having columnar crystal structures are stacked with, and a radiation detection device using the scintillator. There are also provided a scintillator (130) comprising a structure in which a plurality of scintillator layers (131, 132, 135) and light-transmitting intermediate layers (138, 139) disposed among the plurality of scintillator layers (131, 132, 135) are alternately stacked with, and a radiation detection device using the scintillator. Accordingly, it is possible to control the scintillator layer in such a manner as to reduce irregularities on the surface of the scintillator layer, and reduce an abnormal growth portion such as a splash existing inside the scintillator layer. Therefore, a radiation detection device can be obtained which has high reliability, high resolution, and small correction error of a digital image.

Abstract: A radiation detecting apparatus includes a substrate 1, a scintillator layer 7 converting a radiation into light, and scintillator protection members 8, 9 and 10 to cover the scintillator layer 7, wherein the scintillator protection member includes a scintillator protection layer 8 consisting of a hot-melt resin, and the scintillator protection layer 8 touches the scintillator layer 7. As the substrate 1, a sensor panel including a photoreceiving layer 15 on which photoelectric conversion elements 2, receiving light, are arranged in two-dimension, and a protection layer 5 provided on the photreceiving layer 15 and touching the scintillator layer 7 and the scintillator protection layer 8. By using such a scintillator protection layer, a film formation time of the scintillator protection layer can be shortened, and the film thickness dispersion of the scintillator protection layer can be suppressed.

Abstract: A radiation detecting apparatus having: a substrate; a phosphor layer which is formed on a principal plane of the substrate and converts a wavelength of a radiation; and a phosphor protective member including a phosphor protective layer which covers the phosphor layer and is adhered to the substrate, wherein the phosphor protective layer is made of a hot melt resin and an upper surface and a side surface of the phosphor layer and at least a part of at least one side surface of the substrate are covered with the phosphor protective layer. Thus, a moisture-proofing effect for penetration of the moisture from an interface between the phosphor layer and the substrate on the side surface side of the substrate can be improved. Further, by using the hot melt resin for the phosphor protective layer, simplification of manufacturing steps, remarkable reduction in the number of working steps, and remarkable reduction in costs of a product can be accomplished.

Abstract: A light-emitting element includes a protective layer in contact with an upper electrode and a circular polarizer in contact with the protective layer.

Abstract: The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device having a plasma source capable of controlling plasma distribution, the shape of a sheath/bulk boundary above the wafer is controlled to a convexed shape when the plasma is turned on and off. By adding a step of applying a low source power and wafer bias power when the plasma is turned on and off in order to realize an out-high plasma distribution, it is possible to form a sheath that is thicker near the center of the wafer and thinner at the outer circumference portion thereof.

Abstract: There are provided a scintillator (130) comprising a structure in which a plurality of scintillator layers (131, 132, 135) having columnar crystal structures are stacked with, and a radiation detection device using the scintillator. There are also provided a scintillator (130) comprising a structure in which a plurality of scintillator layers (131, 132, 135) and light-transmitting intermediate layers (138, 139) disposed among the plurality of scintillator layers (131, 132, 135) are alternately stacked with, and a radiation detection device using the scintillator. Accordingly, it is possible to control the scintillator layer in such a manner as to reduce irregularities on the surface of the scintillator layer, and reduce an abnormal growth portion such as a splash existing inside the scintillator layer. Therefore, a radiation detection device can be obtained which has high reliability, high resolution, and small correction error of a digital image.

Abstract: The invention provides a particle removal method for a plasma processing apparatus, the method easily removing particles in the chamber up to its lower part.

Abstract: A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.

Abstract: In a radiation detecting device having a sensor panel in which a plurality of photoelectric conversion elements are formed on one surface of a support substrate, a moisture-proof protective layer is laminated on a surface of the sensor panel on which the photoelectric conversion elements are formed, and a warp correction layer is laminated on the other surface of the sensor panel, and the moisture-proof protective layer and the warp correction layer are formed of a resin film having a drawing or extrusion direction, respectively, and bonded together so as to make the drawing or extrusion directions of both the resin films similar to each other. With the formation of the radiation detecting device, the warp of the radiation detection panel induced by a thermal displacement is prevented.

Abstract: A semiconductor manufacturing apparatus includes a vacuum processing chamber and a transportation chamber each including a gas supply unit and a gas exhaust unit, a sample placing electrode for placing a sample thereon and holding the sample in the processing chamber, a gate valve for opening/closing a passage between the processing chamber and the transportation chamber, a transportation device including a transportation arm disposed in the transportation chamber and a sample holding portion disposed at a tip of the arm to hold the sample on the sample holding portion, transport the sample from the transportation chamber to the processing chamber, and transport the processed sample from the processing chamber to the transportation chamber, and a gas blowing unit for blowing gas against the sample so as to be interlocked with a transportation position of the sample being transported to prevent adhesion of floating particles to a surface of the sample.

Abstract: The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant k? and thickness t (?m) of t/k?<300, or a protecting layer formed of a plasma-resistant and water-absorbing resin material is adhered and fixed to the outer surface of an article in the processing chamber by its swelling and then shrinkage.

Abstract: A radiation detecting apparatus having: a substrate; a phosphor layer which is formed on a principal plane of the substrate and converts a wavelength of a radiation; and a phosphor protective member including a phosphor protective layer which covers the phosphor layer and is adhered to the substrate, wherein the phosphor protective layer is made of a hot melt resin and an upper surface and a side surface of the phosphor layer and at least a part of at least one side surface of the substrate are covered with the phosphor protective layer. Thus, a moisture-proofing effect for penetration of the moisture from an interface between the phosphor layer and the substrate on the side surface side of the substrate can be improved. Further, by using the hot melt resin for the phosphor protective layer, simplification of manufacturing steps, remarkable reduction in the number of working steps, and remarkable reduction in costs of a product can be accomplished.

Abstract: A radiation detecting apparatus includes a sensor panel 100, a phosphor layer 111 formed on the sensor panel 100 to convert a radiation into light, and a phosphor protecting member 110 covering the phosphor layer 111 to adhere closely to the phosphor protecting member 110. The phosphor protecting member 110 includes a phosphor protecting layer 116 made of vapor deposition polymerization polyimide formed by vapor deposition polymerization, a reflecting layer 113 reflecting the light converted by the phosphor layer 111, and a protecting layer 117 made of vapor deposition polymerization polyurea formed by the vapor deposition polymerization. By such a configuration, a polymerization reaction of the phosphor protecting layer 116 is performed on the substrate. Thereby, the generation of by-products is suppressed to make it easy to acquire the uniformity of film quality.

Abstract: A radiation detection apparatus including a sensor panel, having a photoreceiving unit constituted of plural photoelectric converting elements two-dimensionally arranged on a substrate and electrical connecting portions provided in an external portion of the photoreceiving unit and electrically connected to the photoelectric converting elements of respective rows or columns of the photoreceiving unit, a phosphor layer provided at least on the photoreceiving unit for converting a radiation into a light detectable by the photoelectric converting element, and a phosphor protective member covering the phosphor layer and in contact with the sensor panel, characterized in that the phosphor protective member includes a frame member provided between the phosphor layer and the electric connecting portion on the sensor panel, and a phosphor protective layer covering an upper surface of the phosphor layer and provided in close contact with an upper surface of the frame member.