Abstract: A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.

Abstract: A plasma processing method utilizing an apparatus comprising a processing chamber to which is connected an exhaust pump for decompressing the chamber, a gas feeding apparatus for feeding gas into the processing chamber, an object to be processed, a wafer electrode for mounting the object, an antenna electrode for generating plasma and opposed to the plate electrode, a plasma generating high frequency power supply connected to the antenna electrode, a first high frequency power supply connected to the wafer electrode, and a second high frequency power supply connected to the antenna electrode. The method includes setting the high frequencies applied from the first high frequency power supply and the second high frequency power supply to be equal and controlling the phase of the respective high frequencies.

Abstract: The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant k? and thickness t (?m) of t/k?<300, or a protecting layer formed of a plasma-resistant and water-absorbing resin material is adhered and fixed to the outer surface of an article in the processing chamber by its swelling and then shrinkage.

Abstract: In a radiation detecting device having a sensor panel in which a plurality of photoelectric conversion elements are formed on one surface of a support substrate, a moisture-proof protective layer is laminated on a surface of the sensor panel on which the photoelectric conversion elements are formed, and a warp correction layer is laminated on the other surface of the sensor panel, and the moisture-proof protective layer and the warp correction layer are formed of a resin film having a drawing or extrusion direction, respectively, and bonded together so as to make the drawing or extrusion directions of both the resin films similar to each other. With the formation of the radiation detecting device, the warp of the radiation detection panel induced by a thermal displacement is prevented.

Abstract: A plasma processing apparatus comprising a processing chamber 102 to which is connected an exhaust pump 124 for decompressing the chamber, a gas feeding apparatus 107 for feeding gas into the processing chamber 102, an object 116 to be processed, a wafer electrode 115 for mounting the object 116, an antenna electrode 103 for generating plasma and opposed to the plate electrode 115, a plasma generating high frequency power supply 111 connected to the antenna electrode 103, a first high frequency power supply 119 connected to the wafer electrode 115, and a second high frequency power supply 114 connected to the antenna electrode 103, further comprising a phase control means 122 for controlling the phase difference of high frequencies applied from the first high frequency power supply 119 and the second high frequency power supply 114 and having the same frequency, according to which the phase of the high frequencies from the first and second power supplies are varied by 180°.

Abstract: A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.

Abstract: The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant k&egr; and thickness t (&mgr;m) of t/k&egr;<300, or a protecting layer formed of a plasma-resistant and water-absorbing resin material is adhered and fixed to the outer surface of an article in the processing chamber by its swelling and then shrinkage.

Abstract: In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc=−300 to −50 V is applied and the surface temperature of said plate ranges from 100 to 200° C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within ±25° C.

Abstract: A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.

Abstract: A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.

Abstract: A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.

Abstract: In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc=−300 to −50 V is applied and the surface temperature of said plate ranges from 100° to 200° C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within ±25° C.

Abstract: An optical recording medium includes an optical recording layer readable by radiation within a first wavelength band, and first and second visible information layers. The first information region is overlaid by the optical recording layer. An opaque layer is provided between the first and second information layers. The optical recording layer has a transmissivity for visible radiation so that the first visible information is visually readable through the optical recording layer.

Abstract: There is provided a reproducible molding die comprising a base structure having an unevenness pattern, and a cleaning layer disposed on the surface of the base structure having the unevenness pattern, wherein the cleaning layer is removable while substantially retaining the unevenness pattern of the base structure. By using above-mentioned molding die, a possible molding residue left in a molding step can easily be removed together with the cleaning layer.

Abstract: A method produces a molding die for an information recording medium, having a mold surface with a prescribed unevenness pattern comprising a projection; the projection having different etching velocities along its projected thickness; and defining a pair of convergent opposite inclining side slopes. Each slope of the pair forms an acute inclining angle with respect to extension of the mold surface. A pattern-forming layer is formed comprising a common metal element throughout its thickness and an additional element differing in composition from the common metal element in the thickness direction of the pattern-forming layer. The common metal element and the additional elements have different etching velocities in the thickness direction of the pattern-forming layer. The pattern-forming layer is selectively etched with a common etchant to form the projection.

Abstract: A mold for molding a plurality of substrates for an information recording medium includes a fixing member, a plurality of units fixed to the fixing member, and a molding cavity. Each of the units has a preformat pattern with a surface corresponding to information recording medium formed on its surface, and the molding cavity is disposed opposite to the units so that the preformat patterns face the molding cavity.

Abstract: There is provided a cast molding die for an information recording medium, having a mold surface with a prescribed unevenness pattern including a projection; wherein the projection has at least one pair of opposite side slopes each of which forms an acute angle with respect to the extension of the mold surface. By using the cast molding die having the above-mentioned projection with a three-dimensional shape, a defect such as lack in the resultant information recording medium is prevented.

Abstract: A method for preparing a substrate for an information recording medium, which comprises injecting a liquid resin into a mold for cast molding of a substrate for information recording medium having a plurality of units of mold for cast molding having an uneven preformat pattern on the surface arranged therein and solidifying the resin, and a mold for molding of the substrate.

Abstract: A molding die for an information recording medium substrate having a prescribed unevenness pattern comprising a track portion and an information pit portion which has a planar shape of a polygon wherein at least one diagonal is substantially parallel to the track portion. Such molding die provides an information recording medium substrate without lack in the periphery of a pre-format.

Abstract: There is provided a molding die for an information recording medium substrate having a prescribed unevenness pattern comprising a track portion and an information pit portion which has a planar shape of a polygon wherein at least one diagonal is substantially parallel to the track portion. Such molding die provides an information recording medium substrate without lack in the periphery of a pre-format.